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STGF20NB60S

STMicroelectronics

STGF20NB60S by STMicroelectronics

STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.

Median Price

$1.105

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

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$1.105

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450

$1.105

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Digiode

USA . 4,802 parts In-Stock

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4,802

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Vyrian

USA . 3,761 parts In-Stock

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3,761

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Anansix

USA . 2,104 parts In-Stock

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Bristol Electronics

USA . 23 parts In-Stock

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23

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,481 parts In-Stock

1+ parts

$0.347

100+ parts

-

1k+ parts

$0.312

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1,481

$0.347

-

$0.312

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MKK Technologies

India . 142 parts In-Stock

1+ parts

$0.652

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142

$0.652

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DigiPath Technology Company

USA . 142 parts In-Stock

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$0.652

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142

$0.652

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Continental Prestige Electronics

USA . 5,162 parts In-Stock

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$1.105

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$1.083

5,162

$1.105

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$1.083

Argo Parts USA

USA . 372 parts In-Stock

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$1.105

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372

$1.105

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Modulus Dynamics

Lithuania . 4,604 parts In-Stock

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$1.223

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$1.223

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$1.223

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4,604

$1.223

$1.223

$1.223

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Aztec Data Supply Inc.

USA . 4,529 parts In-Stock

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$1.470

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4,529

$1.470

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Corohmni

South Africa . 164 parts In-Stock

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$1.615

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$1.615

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AZTECH Wire

Italy . 701 parts In-Stock

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$12.070

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701

$12.070

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Semicontronic

India . 619 parts In-Stock

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$33.050

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$32.224

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$32.058

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619

$33.050

$32.224

$32.058

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Ampacity Inc.

Singapore . 344 parts In-Stock

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$33.050

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344

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Robosynatics

Brazil . 24,893 parts In-Stock

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Lucentia Tech

USA . 24,893 parts In-Stock

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$0.998

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$0.977

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$0.977

24,893

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$0.998

$0.977

$0.977

A-Z Elektronik GmbH

Germany . 6,770 parts In-Stock

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6,770

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 668 parts In-Stock

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$0.415

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668

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$0.415

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Corphita

USA . 574 parts In-Stock

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574

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Overview

Unlock the power of efficient motor control with the STGF20NB60S Insulated Gate Bipolar Transistor by STMicroelectronics. This high-quality N-channel transistor offers reliable performance and a maximum collector-emitter voltage of 600V, making it ideal for a wide range of applications. With a maximum gate-emitter voltage of 20V and a nominal turn-off time of 3600ns, this transistor ensures smooth operation and precise control. Trust STMicroelectronics for superior technology and innovation in semiconductor solutions. Elevate your projects with the STGF20NB60S and experience the benefits of top-tier performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drops, making them more efficient for motor control applications.

Configuration: SINGLE

SINGLE configuration is simple to use and can be easily integrated into motor control circuits.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, ensuring optimal performance in this specific application.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and mounting in motor control systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals are sturdy and provide strong connections, ideal for motor control applications.

Nominal Turn Off Time (toff): 3600 ns

Fast turn off time helps in controlling the switching operation effectively for motor control.

Maximum Power Dissipation (Abs): 40 W

High power dissipation allows for handling higher power levels in motor control applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy mounting and heat dissipation, important for motor control applications.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliability and performance even in demanding motor control environments.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating allows for handling high voltage requirements in motor control circuits.

Transistor Element Material: SILICON

Silicon is known for its high conductivity and reliability, making it a suitable material for this IGBT.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures proper control and switching operation in motor control applications.

Maximum Collector Current (IC): 24 A

High collector current rating allows for handling high current requirements in motor control systems.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures efficient control and switching characteristics in motor control applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and corrosion resistance for a longer lifespan in motor control circuits.

Terminal Position: SINGLE

Single terminal position is straightforward to work with and reduces complexity in motor control circuit design.

Case Connection: ISOLATED

Isolated case connection prevents electrical interference and ensures safe operation in motor control systems.

Nominal Turn On Time (ton): 162 ns

Fast turn on time allows for quick response and precise control in motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGF20NB60S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

3600 ns

Nominal Turn On Time (ton):

162 ns

Trade Compliance

STGF20NB60S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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