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STGF10H60DF

STMicroelectronics

STGF10H60DF by STMicroelectronics

STGF10H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.95V and IC of 20A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and TOFF of 214ns. The transistor operates b/w -55 to 175 °C and comes in a RECTANGULAR package style with FLANGE MOUNT.

Median Price

$2.005

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 7,990 parts In-Stock

1+ parts

$2.000

100+ parts

$0.858

1k+ parts

$0.625

10k+ parts

$0.610

7,990

$2.000

$0.858

$0.625

$0.610

DigiKey

USA . 1,760 parts In-Stock

1+ parts

$2.010

100+ parts

$0.867

1k+ parts

$0.632

10k+ parts

$0.529

1,760

$2.010

$0.867

$0.632

$0.529

Mouser Electronics

USA . 131 parts In-Stock

1+ parts

$2.060

100+ parts

$0.885

1k+ parts

$0.631

10k+ parts

$0.605

131

$2.060

$0.885

$0.631

$0.605

Verical

USA . 7,990 parts In-Stock

1+ parts

-

100+ parts

$0.967

1k+ parts

$0.810

10k+ parts

$0.614

7,990

-

$0.967

$0.810

$0.614

Avnet

USA . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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150

-

-

-

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EBV Elektronik

Germany . 150 parts In-Stock

1+ parts

-

100+ parts

-

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-

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150

-

-

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-

Distributors (In-Stock)

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Vyrian

USA . 1,006 parts In-Stock

1+ parts

$0.936

100+ parts

-

1k+ parts

-

10k+ parts

-

1,006

$0.936

-

-

-

Digiode

USA . 1,683 parts In-Stock

1+ parts

$1.482

100+ parts

-

1k+ parts

-

10k+ parts

-

1,683

$1.482

-

-

-

TME

Poland . 161 parts In-Stock

1+ parts

$1.880

100+ parts

$1.320

1k+ parts

-

10k+ parts

-

161

$1.880

$1.320

-

-

Chip Stock

USA . 33,500 parts In-Stock

1+ parts

-

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33,500

-

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Anansix

USA . 1,156 parts In-Stock

1+ parts

-

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1,156

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,900 parts In-Stock

1+ parts

$1.388

100+ parts

-

1k+ parts

$1.249

10k+ parts

-

1,900

$1.388

-

$1.249

-

Corphita

USA . 240 parts In-Stock

1+ parts

$1.404

100+ parts

-

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10k+ parts

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240

$1.404

-

-

-

Component Stockers USA

USA . 10,666 parts In-Stock

1+ parts

$1.490

100+ parts

$1.100

1k+ parts

$0.770

10k+ parts

-

10,666

$1.490

$1.100

$0.770

-

MKK Technologies

India . 1,331 parts In-Stock

1+ parts

$2.611

100+ parts

-

1k+ parts

-

10k+ parts

-

1,331

$2.611

-

-

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DigiPath Technology Company

USA . 1,331 parts In-Stock

1+ parts

$2.611

100+ parts

-

1k+ parts

-

10k+ parts

-

1,331

$2.611

-

-

-

Microchip USA

USA . 9,503 parts In-Stock

1+ parts

$10.465

100+ parts

-

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10k+ parts

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9,503

$10.465

-

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Perfect Parts

USA . 1,972 parts In-Stock

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1,972

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Kepictronics

USA . 1,307 parts In-Stock

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1,307

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Eastek

USA . 1,250 parts In-Stock

1+ parts

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1,250

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GreenTree Electronics

Israel . 900 parts In-Stock

1+ parts

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900

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-

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Parana Technologies

USA . 680 parts In-Stock

1+ parts

-

100+ parts

$1.660

1k+ parts

-

10k+ parts

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680

-

$1.660

-

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Overview

Elevate your power control applications with the STGF10H60DF Insulated Gate Bipolar Transistor by STMicroelectronics. Crafted with precision and expertise, this N-CHANNEL transistor offers exceptional quality and reliability. With a maximum VCEsat of 1.95V and a maximum operating temperature of 175 °C, this device ensures optimal performance and efficiency. Whether you're looking to enhance your power control systems or boost your electronic projects, the STGF10H60DF delivers value, benefits, and advantages that cater to your every need. Experience the difference with STMicroelectronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside the package.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs are known for their fast switching speeds and low on-state voltage drop.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse polarity.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable performance in high-power circuits.

Maximum VCEsat: 1.95 V

Low VCEsat minimizes power loss and heat generation, improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and efficient use of space in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and ease of soldering.

Nominal Turn Off Time (toff): 214 ns

Fast turn-off time allows for precise control and efficient operation of power circuits.

No. of Terminals: 3

Minimal number of terminals simplifies circuit layout and assembly.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability ensures the device can handle heavy loads without damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package allows for secure and stable mounting on heat sinks or circuit boards.

Maximum Operating Temperature: 175 °C

Wide operating temperature range makes it suitable for use in various environments and applications.

Maximum Collector-Emitter Voltage: 600 V

High VCE voltage rating allows for use in high-voltage circuits without risk of breakdown.

Transistor Element Material: SILICON

Silicon material offers good electrical characteristics and reliability for long-term use.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating ensures proper gate control and protection against overvoltage.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions without performance degradation.

Maximum Collector Current (IC): 20 A

High collector current rating allows for handling of high current loads in power circuits.

Maximum Gate-Emitter Threshold Voltage: 7 V

Low gate-emitter threshold voltage ensures easy turn-on of the device for effective power control.

Terminal Position: SINGLE

Single terminal position simplifies connection and ensures correct orientation in circuit design.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and prevents short circuits in the system.

Nominal Turn On Time (ton): 26.8 ns

Fast turn-on time allows for quick response and precise control in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGF10H60DF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

214 ns

Nominal Turn On Time (ton):

26.8 ns

Maximum VCEsat:

1.95 V

Trade Compliance

STGF10H60DF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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