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STGF19NC60SD

STMicroelectronics

STGF19NC60SD by STMicroelectronics

STGF19NC60SD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 17A max collector current, and 32W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 535ns.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,917 parts In-Stock

1+ parts

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2,917

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Digiode

USA . 1,980 parts In-Stock

1+ parts

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1,980

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Anansix

USA . 652 parts In-Stock

1+ parts

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652

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 942 parts In-Stock

1+ parts

$0.725

100+ parts

-

1k+ parts

$0.652

10k+ parts

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942

$0.725

-

$0.652

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MKK Technologies

India . 346 parts In-Stock

1+ parts

$1.363

100+ parts

-

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346

$1.363

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DigiPath Technology Company

USA . 346 parts In-Stock

1+ parts

$1.363

100+ parts

-

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346

$1.363

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Corphita

USA . 2,559 parts In-Stock

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2,559

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Parana Technologies

USA . 1,330 parts In-Stock

1+ parts

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100+ parts

$0.867

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1,330

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$0.867

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Overview

Enhance power control with the STGF19NC60SD Insulated Gate Bipolar Transistor by STMicroelectronics. Crafted from high-quality materials and boasting a single configuration with a built-in diode, this transistor is perfect for applications requiring efficient power management. Whether you're looking to optimize your industrial equipment or enhance renewable energy systems, this product offers unmatched reliability, performance, and value. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the STGF19NC60SD today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides sturdy and durable construction for reliable performance.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and management.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connection to the circuit board.

Nominal Turn Off Time (toff): 535 ns

Provides fast turn-off time for efficient power management.

No. of Terminals: 3

Simplifies circuit connection and setup.

Maximum Power Dissipation (Abs): 32 W

Can handle high power dissipation for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment in industrial applications.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments.

Maximum Collector-Emitter Voltage: 600 V

Suitable for high-voltage applications.

Transistor Element Material: SILICON

Provides high reliability and performance for power control applications.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise control of the transistor.

Maximum Collector Current (IC): 17 A

Capable of handling high current loads in power control circuits.

Maximum Gate-Emitter Threshold Voltage: 6.2 V

Provides a suitable threshold for efficient control.

Terminal Position: SINGLE

Streamlines circuit connections and layout.

Case Connection: ISOLATED

Provides electrical isolation for safety and reliability.

Nominal Turn On Time (ton): 23.5 ns

Offers fast turn-on time for rapid power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGF19NC60SD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.2 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

535 ns

Nominal Turn On Time (ton):

23.5 ns

Trade Compliance

STGF19NC60SD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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