Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Onsemi's FGD3040G2-F085C is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max VCEsat of 1.25V, collector-emitter voltage of 450V, and can handle a max current of 41A. This surface-mount transistor has a package style of small outline and operates b/w -55 to 175 °C.
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The use of plastic/epoxy material ensures durability and reliability in various automotive ignition applications.
N-channel configuration provides high efficiency and performance in power switching applications.
This configuration simplifies circuit design and saves space, making it ideal for automotive ignition systems.
Specifically designed for automotive ignition systems, ensuring optimal performance and reliability in this application.
The surface mount capability allows for easy and efficient assembly onto printed circuit boards, reducing installation time and costs.
Fast rise time ensures quick response in switching, improving efficiency and reducing power losses.
Low VCEsat minimizes power dissipation and enhances overall energy efficiency of the system.
Rectangular shape allows for efficient and compact PCB layout, optimizing space utilization in automotive ignition systems.
Gull wing terminals provide secure and reliable connections, ensuring stable performance in demanding operating conditions.
Slow fall time reduces switching losses, enhancing efficiency and reliability in power switching applications.
Insulated Gate Bipolar Transistors (IGBT) FGD3040G2-F085C attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Reference Standard:
Maximum Rise Time (tr):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Maximum Turn Off Time (toff):
Nominal Turn Off Time (toff):
Maximum Turn On Time (ton):
Nominal Turn On Time (ton):
Maximum VCEsat:
FGD3040G2-F085C Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
CSNF651
Honeywell Sensing And Control
CSNF651 by Honeywell Sensing And Control is an industrial-grade analog circuit with 3 terminals. It operates b/w -40 to 85°C, supporting supply voltages from -15V to 15V. Ideal for applications requiring a special shape rectangular package style and through-hole terminal form.
SMBJ18CA
Dc Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
CRCW04020000Z0ED
Vishay Intertechnology
Vishay Intertechnology's CRCW04020000Z0ED is a 0 ohm jumper resistor with METAL GLAZE/THICK FILM tech. Operating b/w -55 to 155 °C, it suits SMT applications in automotive electronics due to AEC-Q200 compliance and 0.063 W power dissipation.
Semtech
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
CRG0805F10R
Tyco Electronics Components
FIXED RESISTOR; Mounting Type: SURFACE MOUNT; Resistance: 10 ohm; Rated Power Dissipation (P): .125 W; Maximum Operating Temperature: 125 Cel; Tolerance: 1 %;
SS14
Sangdest Microelectronics (Nanjing)
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
2N2222A
Taitron Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
Rfe International
1N4148
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LD1117S33CTR
STMicroelectronics
STMicroelectronics LD1117S33CTR is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It operates within an input voltage range of 4.75V to 15V, making it suitable for various applications requiring stable voltage regulation in compact designs. The device features low dropout voltage of 1.3V, high temperature operation up to 125°C, and small outline package style for space-constrained PCB layouts.
LM555CMX
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
LM555CN
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
Hitano Enterprise
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BAV99
Rectron
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM2931AZ-5.0RAG
Onsemi
LM2931AZ-5.0RAG by Onsemi is a Fixed Positive Single Output LDO Regulator with 5V nominal output voltage, 0.1A max output current, and 0.6V max dropout voltage. Ideal for applications requiring stable voltage regulation in temperature-sensitive environments up to 150°C.
IGW15T120FKSA1
Infineon Technologies
IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.
IXDH30N120D1
Littelfuse
IXDH30N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 435W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 570ns.
FF600R12ME4B11BPSA1
Infineon Technologies' FF600R12ME4B11BPSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1200V and current of 995A, ideal for power control applications. Featuring a turn off time of 770ns and turn on time of 310ns, it is UL RECOGNIZED and comes in a FLANGE MOUNT package style.
FGA25N120ANTDTU-F109
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 312 W; Maximum Collector Current (IC): 50 A; Maximum Fall Time (tf): 180 ns; Maximum Operating Temperature: 150 Cel;
IRG4BC40SPBF
IRG4BC40SPBF by Infineon is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 60A max collector current. It has a power dissipation of 160W, making it suitable for power control applications. With a turn-off time of 1940ns and turn-on time of 44ns, it offers efficient performance in high-power systems.
IKD04N60RFBTMA1
IKD04N60RFBTMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 8A max collector current, and 216ns turn-off time. Ideal for power control applications due to its 75W max power dissipation, small outline package style, and built-in diode configuration.
IXXN110N65C4H1
IXXN110N65C4H1 by Littelfuse is an N-CHANNEL IGBT with 650V VCEsat, 210A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
APT65GP60JDQ2
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
IRG7PH42UD1-EP
IRG7PH42UD1-EP by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 1200V. It has a max power dissipation of 313W and is designed for power control applications. The transistor has a rectangular package shape and a through-hole terminal form.
AFGHL75T65SQDT
AFGHL75T65SQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 174ns and a max power dissipation of 375W. This single configuration transistor operates b/w -55 to 175 °C, making it suitable for various industrial uses.
IRG4PF50WPBF
IRG4PF50WPBF by Infineon Technologies is an N-CHANNEL IGBT with 900V max collector-emitter voltage, 51A max collector current, and 200W max power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 370ns and low gate-emitter threshold voltage of 6V.
FS25R12KE3GBOSA1
FS25R12KE3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a BRIDGE configuration. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 40A. This IGBT is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
VS-GA200SA60UP
VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.
IXXH30N60B3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
CPV364M4FPBF
Vishay Intertechnology's CPV364M4FPBF is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 700ns and high operating temperature of 150°C. Package style is FLANGE MOUNT with RECTANGULAR shape and THROUGH-HOLE terminals.
APT45GP120J
Microchip Technology
APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
IRG4BC30FD1PBF
IRG4BC30FD1PBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 31A max collector current. It has a 740ns turn off time, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and can handle up to 100W of power dissipation at a max operating temperature of 150°C.
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 290W power dissipation. Ideal for power control applications, it features a built-in diode, 54ns fall time, and -55 to 150°C operating temperature range.
IRG7PH42UD2-EP
IRG7PH42UD2-EP by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 1200V and a collector current of 60A. It has a nominal turn-off time of 470ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and a built-in diode for efficient performance.
IKQ50N120CH3XKSA1
IKQ50N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it has a turn-off time of 466ns and turn-on time of 68ns. Package style is flange mount with through-hole terminals.
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FGD3040G2-F085
FGD3040G2-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and Max Power Dissipation of 150W. It is designed for AUTOMOTIVE IGNITION applications, featuring a built-in diode and resistor in a surface-mount package style.
FGD3040G2_F085
Fairchild Semiconductor's FGD3040G2_F085 is an N-CHANNEL IGBT with 23.2A IC, 390V VCE, and 150W Pd. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package suitable for surface mount assembly.
FGD3040G2-F085V
FGD3040G2-F085V by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector current (IC) of 41A. It is commonly used for power control applications due to its high power dissipation of 150W and small outline package style.
FGD3440G2-F085
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Maximum Collector-Emitter Voltage: 450 V; Maximum Gate-Emitter Voltage: 14 V;
FGD3440G2_F085
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Moisture Sensitivity Level (MSL): 1; Maximum Fall Time (tf): 15000 ns;
FGD3050G2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 32 A; Maximum Gate-Emitter Threshold Voltage: 2.2 V;
FGD3050G2_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 32 A; Maximum Rise Time (tr): 7000 ns;
FGD3050G2V
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 32 A; Package Style (Meter): SMALL OUTLINE;
FGD3245G2-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 23 A; Terminal Position: SINGLE;
FGD3245G2-F085C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 23 A; Maximum Time At Peak Reflow Temperature (s): 30;
FGD3245G2-F085V
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 23 A; Maximum Fall Time (tf): 15000 ns;
FGD3325G2-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 41 A; Moisture Sensitivity Level (MSL): 1;
FGD3325G2-F085V
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 41 A; Transistor Application: AUTOMOTIVE IGNITION;
FGD3440G2
Insulated Gate Bipolar Transistors;
FGD3440G2-F085V
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 26.9 A; Minimum Operating Temperature: -40 Cel;
FGD3N60LSDTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 6 A; Additional Features: LOW CONDUCTION LOSS;
FGD3N60LSDTM-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 6 A; Package Style (Meter): SMALL OUTLINE;
FGD3N60UNDF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 600 V;
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