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FZ1500R33HL3BPSA1

Infineon Technologies

FZ1500R33HL3BPSA1 by Infineon Technologies

FZ1500R33HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 3300V max collector-emitter voltage. It features a complex configuration, 4700ns turn-off time, and 1050ns turn-on time. Ideal for power control applications due to its isolated case connection and flange mount package style.

Median Price

$1,577.280

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 246 parts In-Stock

1+ parts

$1,509.360

100+ parts

$1,418.800

1k+ parts

$1,328.240

10k+ parts

-

246

$1,509.360

$1,418.800

$1,328.240

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DigiKey

USA . 1 parts In-Stock

1+ parts

$1,577.280

100+ parts

-

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-

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1

$1,577.280

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-

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Verical

USA . 246 parts In-Stock

1+ parts

$1,886.700

100+ parts

$1,773.500

1k+ parts

$1,660.300

10k+ parts

-

246

$1,886.700

$1,773.500

$1,660.300

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 762 parts In-Stock

1+ parts

$2,011.216

100+ parts

-

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762

$2,011.216

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Vyrian

USA . 4,293 parts In-Stock

1+ parts

-

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4,293

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Nova Conductors

Japan . 75 parts In-Stock

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75

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,496 parts In-Stock

1+ parts

$0.390

100+ parts

-

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-

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4,496

$0.390

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Modulus Dynamics

Lithuania . 17,523 parts In-Stock

1+ parts

$1.329

100+ parts

$1.276

1k+ parts

$1.223

10k+ parts

-

17,523

$1.329

$1.276

$1.223

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Corohmni

South Africa . 225 parts In-Stock

1+ parts

$1.576

100+ parts

-

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225

$1.576

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AZTECH Wire

Italy . 510 parts In-Stock

1+ parts

$15.413

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-

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510

$15.413

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Ampacity Inc.

Singapore . 124 parts In-Stock

1+ parts

$1,799.510

100+ parts

-

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124

$1,799.510

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Semicontronic

India . 71 parts In-Stock

1+ parts

$1,799.510

100+ parts

$1,754.522

1k+ parts

$1,745.525

10k+ parts

-

71

$1,799.510

$1,754.522

$1,745.525

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Corphita

USA . 115 parts In-Stock

1+ parts

$1,905.363

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115

$1,905.363

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Microchip USA

USA . 2,277 parts In-Stock

1+ parts

$2,195.640

100+ parts

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2,277

$2,195.640

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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7,000

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Continental Prestige Electronics

USA . 3,317 parts In-Stock

1+ parts

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3,317

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Argo Parts USA

USA . 644 parts In-Stock

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644

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Looking to power up your control systems with precision and efficiency? Look no further than the FZ1500R33HL3BPSA1 by Infineon Technologies. As a leader in the industry, Infineon is renowned for producing high-quality Insulated Gate Bipolar Transistors (IGBT). This N-CHANNEL transistor boasts a complex configuration ideal for power control applications. With 3 elements and a maximum collector-emitter voltage of 3300V, this transistor offers outstanding performance and reliability. Upgrade your power systems today with the FZ1500R33HL3BPSA1 and experience the difference in quality and efficiency!

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower conduction losses and better thermal stability compared to P-CHANNEL IGBTs, making this product a good choice for power control applications.

Configuration: COMPLEX

The complex configuration allows for more precise and efficient power control, making this product suitable for high-performance applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized to handle high voltages and currents efficiently.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and efficient heat dissipation, making it a reliable choice for power control systems.

Max Collector-Emitter Voltage: 3300 V

With a high maximum collector-emitter voltage, this IGBT is suitable for high-power applications where voltage spikes may occur.

Nominal Turn Off Time (toff): 4700 ns

The relatively slow turn-off time allows for better control and protection of the power circuit, ensuring safe operation in various working conditions.

Nominal Turn On Time (ton): 1050 ns

The fast turn-on time helps in quickly switching on the power circuit, improving efficiency and reducing power loss.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ1500R33HL3BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

3300 V

Configuration:

JESD-30 Code:

R-XUFM-X9

No. of Elements:

3

No. of Terminals:

9

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

4700 ns

Nominal Turn On Time (ton):

1050 ns

Trade Compliance

FZ1500R33HL3BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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