Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FZ600R65KE3NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6500V max collector-emitter voltage. It has a complex configuration, 3 elements, and 1200ns nominal turn on time. Ideal for power control applications due to its isolated case connection and flange mount package style.
Median Price
$2,550.906
Lifecycle Status
Suppliers In-Stock
3
In-Stock Inventory
1k+
Digiode
1+ parts
$2,180.402
100+ parts
-
1k+ parts
10k+ parts
Nova Conductors
$2,921.410
Vyrian
Modulus Dynamics
$0.428
$0.411
$0.394
AZTECH Wire
$7.814
Ampacity Inc.
$17.050
Corphita
$2,065.644
Microchip USA
$2,380.300
Continental Prestige Electronics
$2,862.982
Argo Parts USA
$2,892.196
$2,833.768
Netroflash
$2,775.340
$2,716.911
N-CHANNEL IGBTs typically have lower on-state voltage drop, leading to higher efficiency and better performance in power control applications.
Complex configuration allows for advanced power control and precise switching capabilities, making this IGBT suitable for demanding applications.
Designed specifically for power control applications, this IGBT offers reliable and efficient performance in managing high power levels.
Rectangular package shape provides easy mounting and heat dissipation, making installation and maintenance convenient for power control systems.
The fast turn-off time of 8100 ns ensures quick and efficient switching, reducing power losses and improving overall system efficiency.
With 9 terminals, this IGBT offers versatile connectivity options, allowing for flexible integration into power control circuits.
High maximum collector-emitter voltage of 6500 V makes this IGBT suitable for high voltage power control applications, ensuring reliable performance under heavy loads.
Silicon-based transistor element material provides stable and consistent performance, making this IGBT a reliable choice for power control applications.
Upper terminal position allows for easy connections and minimizes the risk of short circuits, ensuring safe and reliable operation in power control systems.
Isolated case connection helps prevent electrical interference and enhances safety in power control circuits, making this IGBT a reliable choice for critical applications.
Fast turn-on time of 1200 ns enables quick response and precise control in power switching applications, enhancing overall efficiency and performance.
Insulated Gate Bipolar Transistors (IGBT) FZ600R65KE3NOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
Maximum Collector-Emitter Voltage:
Configuration:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
FZ600R65KE3NOSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
BAV99
Infinex
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Dc Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Pulse Electronics
1N4148
Rochester Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM107H/883
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
MMBT3904-7-F
Diodes Incorporated
Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
MBR0520LT1
Motorola
ESD5Z5.0T1G
Onsemi
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
LM358N
Kec
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
MURS160T3G
MURS160T3G by Onsemi is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It has a fast recovery time of 0.075us, making it suitable for high voltage applications. The diode operates in temperatures ranging from -65 to 175°C, ideal for power systems requiring ultra-fast response.
Hitano Enterprise
International Semiconductor
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
General Semiconductor
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
M39029/58360
Souriau
CONNECTOR ACCESSORY; Associated Military - Specifications: MIL-DTL-38999; Tool Settings: M22520/2-09; Terminal Type: CRIMP; MIL Conformity: YES; Mating Contacts: M39029/56348;
LL4148
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
FD200R12KE3PHOSA1
Infineon Technologies
Infineon's FD200R12KE3PHOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 830ns turn off time and 400ns turn on time, this UL recognized transistor operates from -40°C and comes in a flange mount package style.
IRG4PC50FD-EPBF
IRG4PC50FD-EPBF by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 70A. It has a turn-off time of 660ns and turn-on time of 86ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals for easy installation.
IXXX300N60C3
IXYS Corporation
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 510 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Threshold Voltage: 5.5 V;
2PS13512E43W35222NOSA1
2PS13512E43W35222NOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements, suitable for POWER CONTROL applications. It has a max operating temperature of 55°C and min of -25°C, housed in a RECTANGULAR MICROELECTRONIC ASSEMBLY package. The transistor's SILICON material and ISOLATED case connection enhance its performance.
FGH40N60SMDF
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
2MBI200UD-120
Fuji Electric
Fuji Electric's 2MBI200UD-120 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 300A, and turn off time of 370ns. Ideal for power control applications due to its fast switching capabilities and high voltage handling.
IKB15N65EH5ATMA1
Infineon's IKB15N65EH5ATMA1 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and toff of 180ns. Ideal for power control applications due to its high operating temperature of 175°C and built-in diode configuration. Suitable for surface mount designs with a small outline package style.
APT45GP120J
Microchip Technology
APT45GP120J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 329W. It has a nominal turn-off time of 230ns and is suitable for power control applications. The transistor comes in a rectangular package style with flange mount, making it ideal for high-power electronic systems.
FP10R12W1T4PB11BPSA1
Infineon's FP10R12W1T4PB11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 20A max collector current, and 500ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
IXXX200N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1630 W; Maximum Collector Current (IC): 380 A; Maximum Collector-Emitter Voltage: 600 V;
FF300R12KE4HOSA1
FF300R12KE4HOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and 800 ns turn off time. It operates at a max temperature of 150°C, has a collector-emitter voltage of 1200V, and can handle a max current of 460A. Ideal for high-power applications requiring fast switching capabilities.
IXBH10N170
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 140 W; Maximum Collector Current (IC): 20 A; Terminal Form: THROUGH-HOLE;
IXDR35N60BD1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 38 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSIP-T3;
IXDN55N120D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 100 A; Terminal Form: UNSPECIFIED;
SKM400GB12T4
Semikron International
Semikron International's SKM400GB12T4 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.05V and Max Collector Current of 610A, it operates at up to 175°C. With a Max Collector-Emitter Voltage of 1200V, this UL RECOGNIZED transistor is designed for high-power systems.
IRG4PC30FPBF
IRG4PC30FPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 31A max collector current. It has a turn-off time of 640ns, turn-on time of 36ns, and can dissipate up to 100W power. Ideal for power control applications due to its single configuration and flange mount package style.
IRGP4640DPBF
International Rectifier
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 65 A; Maximum Fall Time (tf): 41 ns; Maximum Operating Temperature: 175 Cel;
IRG4RC10SDPBF
IRG4RC10SDPBF by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and Max Collector Current of 14A. It is designed for POWER CONTROL applications, featuring a small outline package style and built-in diode for efficient performance in power electronics systems.
FF300R12ME4BOSA1
FF300R12ME4BOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max voltage of 1200V, current of 450A, and turn off time of 720ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
APTGT75A60T1G
Microsemi
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 100 A; Terminal Finish: TIN SILVER COPPER;
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
FZ600R17KE3S4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3150 W; Maximum Collector Current (IC): 840 A; Transistor Application: POWER CONTROL;
FZ600R12KS4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 700 A; Terminal Form: UNSPECIFIED; JESD-30 Code: R-XUFM-X5;
FZ600R12KE4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Qualification: Not Qualified; Terminal Position: UPPER;
FZ600R17KE4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 840 A; No. of Terminals: 3; Qualification: Not Qualified;
FZ600R12KE3HOSA1
FZ600R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 900A max collector current, and 830ns turn off time. It is used for power control applications due to its single configuration with built-in diode and silicon transistor element material.
FZ600R65KE3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: RECTANGULAR; Nominal Turn Off Time (toff): 8100 ns;
FZ600R12KS4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3900 W; Maximum Collector Current (IC): 700 A; Transistor Element Material: SILICON;
FZ600R65KF1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11400 W; Maximum Collector Current (IC): 1200 A; No. of Elements: 3;
FZ600R65KF1NOSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Maximum Collector-Emitter Voltage: 6300 V; Case Connection: ISOLATED;
FZ600R12KE3_B1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2750 W; Maximum Collector Current (IC): 900 A; Nominal Turn On Time (ton): 400 ns;
FZ600R12KE4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3000 W; Maximum Collector Current (IC): 600 A; Nominal Turn On Time (ton): 370 ns;
FZ600R17KE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3120 W; Maximum Collector Current (IC): 840 A; Maximum Collector-Emitter Voltage: 1700 V;
FZ600R12KP4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2400 A; Package Shape: RECTANGULAR; Terminal Position: UPPER;
FZ600R17KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 840 A; Maximum Collector-Emitter Voltage: 1700 V; Transistor Application: POWER CONTROL;
FZ600R17KE3_S4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 840 A; Nominal Turn On Time (ton): 400 ns; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FZ600R12KE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2750 W; Maximum Collector Current (IC): 900 A; No. of Terminals: 3;
FZ600R12KE3B1HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 900 A; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
FZ600R12KP4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3000 W; Maximum Collector Current (IC): 2400 A; No. of Elements: 1;
FZ600R17KE4
FZ600R17KE4 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1700V and a max collector current of 840A. It has a nominal turn-off time of 930ns and is designed for power control applications. The transistor element material is silicon, and it comes in a rectangular package style with flange mount.
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 11400 W; Maximum Collector Current (IC): 1200 A; Nominal Turn Off Time (toff): 6500 ns;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved