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FZ600R17KE4

Infineon Technologies

FZ600R17KE4 by Infineon Technologies

FZ600R17KE4 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1700V and a max collector current of 840A. It has a nominal turn-off time of 930ns and is designed for power control applications. The transistor element material is silicon, and it comes in a rectangular package style with flange mount.

Median Price

$172.600

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 56 parts In-Stock

1+ parts

$172.600

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56

$172.600

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Distributors (In-Stock)

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Vyrian

USA . 25 parts In-Stock

1+ parts

$113.740

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25

$113.740

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Digiode

USA . 78 parts In-Stock

1+ parts

$137.389

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-

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78

$137.389

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Forefront Electronics and Design

USA . 1 parts In-Stock

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$196.000

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1

$196.000

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Rutronik

Germany . 10 parts In-Stock

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$136.690

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10

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$136.690

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 14,421 parts In-Stock

1+ parts

$0.886

100+ parts

$0.851

1k+ parts

$0.815

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-

14,421

$0.886

$0.851

$0.815

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Northwest PG Solutions

USA . 405 parts In-Stock

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$2.512

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405

$2.512

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Andel Nordic

Denmark . 489 parts In-Stock

1+ parts

$58.730

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$41.111

10k+ parts

$41.111

489

$58.730

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$41.111

$41.111

Corphita

USA . 991 parts In-Stock

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$130.158

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991

$130.158

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Lixinc

USA . 7,469 parts In-Stock

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7,469

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A-Z Elektronik GmbH

Germany . 4,514 parts In-Stock

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4,514

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Alle Elektronik GmbH

Germany . 3,009 parts In-Stock

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Perfect Parts

USA . 1,295 parts In-Stock

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1,295

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Native Components

USA . 836 parts In-Stock

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$2.215

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836

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$2.215

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Overview

Unleash the power of innovation with the FZ600R17KE4 by Infineon Technologies! As a leader in the industry, Infineon Technologies delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. Ideal for power control applications, this N-CHANNEL transistor boasts a single configuration with a built-in diode for added convenience. With a maximum collector-emitter voltage of 1700V and a nominal turn off time of just 930ns, this product offers unparalleled performance and reliability. Elevate your projects to new heights with the FZ600R17KE4 – the ultimate choice for cutting-edge technology solutions.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their lower conduction losses and better thermal performance compared to P-CHANNEL IGBTs, making this product a good choice for efficiency and reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the circuit design and saves space, making this IGBT a convenient choice for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers high efficiency and precise control over power levels, making it suitable for a wide range of power management tasks.

Maximum Collector Current (IC): 840 A

With a high maximum collector current rating, this IGBT can handle heavy loads and high power levels, making it a reliable choice for demanding applications.

Maximum Collector-Emitter Voltage: 1700 V

The high maximum collector-emitter voltage rating of 1700V allows this IGBT to withstand high voltage spikes and surges, making it suitable for high-power applications where voltage levels may vary.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ600R17KE4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

JESD-30 Code:

R-XUFM-X3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

930 ns

Nominal Turn On Time (ton):

355 ns

Trade Compliance

FZ600R17KE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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