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IKW30N65H5XKSA1

Infineon Technologies

IKW30N65H5XKSA1 by Infineon Technologies

IKW30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 55A. It has a toff of 246ns and ton of 31ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.

Median Price

$4.298

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 97 parts In-Stock

1+ parts

$3.910

100+ parts

$2.130

1k+ parts

-

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97

$3.910

$2.130

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DigiKey

USA . 354 parts In-Stock

1+ parts

$4.130

100+ parts

$2.278

1k+ parts

$1.568

10k+ parts

$1.416

354

$4.130

$2.278

$1.568

$1.416

Element14

Singapore . 223 parts In-Stock

1+ parts

$4.298

100+ parts

$2.212

1k+ parts

$2.131

10k+ parts

-

223

$4.298

$2.212

$2.131

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Farnell

UK . 223 parts In-Stock

1+ parts

$4.604

100+ parts

$2.897

1k+ parts

$2.125

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-

223

$4.604

$2.897

$2.125

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Newark

USA . 97 parts In-Stock

1+ parts

$4.660

100+ parts

$2.590

1k+ parts

$2.270

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97

$4.660

$2.590

$2.270

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Arrow

USA . 1,630 parts In-Stock

1+ parts

$4.814

100+ parts

$2.292

1k+ parts

$1.803

10k+ parts

-

1,630

$4.814

$2.292

$1.803

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Distrelec

Netherlands . 5 parts In-Stock

1+ parts

$5.006

100+ parts

-

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5

$5.006

-

-

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RS (Exports)

UK . 550 parts In-Stock

1+ parts

-

100+ parts

$3.117

1k+ parts

$2.879

10k+ parts

-

550

-

$3.117

$2.879

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Verical

USA . 180 parts In-Stock

1+ parts

-

100+ parts

$1.779

1k+ parts

$1.349

10k+ parts

-

180

-

$1.779

$1.349

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 31 parts In-Stock

1+ parts

$3.670

100+ parts

$3.250

1k+ parts

-

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31

$3.670

$3.250

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Digiode

USA . 957 parts In-Stock

1+ parts

$3.762

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957

$3.762

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Chip Stock

USA . 5,100 parts In-Stock

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5,100

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Nova Conductors

Japan . 500 parts In-Stock

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500

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NAC Semi

USA . 240 parts In-Stock

1+ parts

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$3.600

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240

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$3.600

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Vyrian

USA . 174 parts In-Stock

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174

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 9,735 parts In-Stock

1+ parts

$0.618

100+ parts

$0.593

1k+ parts

$0.569

10k+ parts

-

9,735

$0.618

$0.593

$0.569

-

Corohmni

South Africa . 65 parts In-Stock

1+ parts

$1.368

100+ parts

-

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65

$1.368

-

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Aztec Data Supply Inc.

USA . 41,909 parts In-Stock

1+ parts

$1.514

100+ parts

-

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41,909

$1.514

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.829

100+ parts

$1.738

1k+ parts

$1.738

10k+ parts

-

3,000

$1.829

$1.738

$1.738

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Ampacity Inc.

Singapore . 232 parts In-Stock

1+ parts

$1.930

100+ parts

-

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232

$1.930

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Semicontronic

India . 78 parts In-Stock

1+ parts

$1.930

100+ parts

$1.882

1k+ parts

$1.872

10k+ parts

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78

$1.930

$1.882

$1.872

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Corphita

USA . 494 parts In-Stock

1+ parts

$3.564

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494

$3.564

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Component Stockers USA

USA . 3,038 parts In-Stock

1+ parts

$3.580

100+ parts

$2.330

1k+ parts

$1.760

10k+ parts

-

3,038

$3.580

$2.330

$1.760

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Continental Prestige Electronics

USA . 250 parts In-Stock

1+ parts

$4.600

100+ parts

$2.380

1k+ parts

$2.360

10k+ parts

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250

$4.600

$2.380

$2.360

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Microchip USA

USA . 9,165 parts In-Stock

1+ parts

$14.308

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9,165

$14.308

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Robosynatics

Brazil . 19,532 parts In-Stock

1+ parts

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100+ parts

$1.031

1k+ parts

$1.010

10k+ parts

$1.010

19,532

-

$1.031

$1.010

$1.010

Lucentia Tech

USA . 19,532 parts In-Stock

1+ parts

-

100+ parts

$1.031

1k+ parts

$1.010

10k+ parts

$1.010

19,532

-

$1.031

$1.010

$1.010

Argo Parts USA

USA . 1,024 parts In-Stock

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1,024

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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iodParts Technologies Inc.

India . 199 parts In-Stock

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199

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Unlock the power of efficient energy management with the IKW30N65H5XKSA1 by Infineon Technologies. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor offers unparalleled performance in power control applications. Its N-CHANNEL configuration and built-in diode ensure seamless operation, while the high-quality materials guarantee durability. Trust in the reliability of Infineon Technologies to optimize your power systems and experience the benefits of enhanced efficiency and cost savings. Elevate your technology with the IKW30N65H5XKSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the IGBT, making it suitable for various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer better performance and efficiency compared to P-channel IGBTs, making them ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces component count, enhancing the overall efficiency of the power control system.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers high performance and reliability in controlling electric power.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration into existing circuit designs and ensures a compact and space-saving layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections to the circuit board, ensuring stable performance under high voltage and current conditions.

Nominal Turn Off Time (toff): 246 ns

The fast turn-off time of 246 ns allows for efficient switching operations, reducing power losses and improving overall system performance.

No. of Terminals: 3

The 3-terminal design simplifies circuit connections and ensures compatibility with standard IGBT configurations, making it easy to integrate into existing systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and easy mounting options for secure installation in power control systems.

Maximum Collector-Emitter Voltage: 650 V

With a high maximum voltage rating of 650 V, this IGBT can handle high voltage levels, making it suitable for a wide range of power control applications.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and robust performance, ensuring reliable operation even under high temperature conditions.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40°C makes this IGBT suitable for use in various environmental conditions and temperature extremes.

Maximum Collector Current (IC): 55 A

With a high maximum collector current rating of 55 A, this IGBT can handle large current loads, making it ideal for high-power applications.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures reliable electrical connections, enhancing the longevity and performance of the IGBT.

Terminal Position: SINGLE

The single terminal position simplifies installation and wiring, ensuring easy integration into circuit designs and reducing complexity in connection arrangements.

Nominal Turn On Time (ton): 31 ns

The fast turn-on time of 31 ns allows for quick response and efficient switching operations, enabling precise control and high performance in power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKW30N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

246 ns

Nominal Turn On Time (ton):

31 ns

Trade Compliance

IKW30N65H5XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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