Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IKW30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 55A. It has a toff of 246ns and ton of 31ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.
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The plastic/epoxy material provides durability and protection for the internal components of the IGBT, making it suitable for various operating conditions.
N-channel IGBTs offer better performance and efficiency compared to P-channel IGBTs, making them ideal for power control applications.
The built-in diode simplifies circuit design and reduces component count, enhancing the overall efficiency of the power control system.
Designed specifically for power control applications, this IGBT offers high performance and reliability in controlling electric power.
The rectangular package shape allows for easy integration into existing circuit designs and ensures a compact and space-saving layout.
Through-hole terminals provide secure and reliable connections to the circuit board, ensuring stable performance under high voltage and current conditions.
The fast turn-off time of 246 ns allows for efficient switching operations, reducing power losses and improving overall system performance.
The 3-terminal design simplifies circuit connections and ensures compatibility with standard IGBT configurations, making it easy to integrate into existing systems.
The flange mount package style provides mechanical stability and easy mounting options for secure installation in power control systems.
With a high maximum voltage rating of 650 V, this IGBT can handle high voltage levels, making it suitable for a wide range of power control applications.
Silicon material offers high thermal conductivity and robust performance, ensuring reliable operation even under high temperature conditions.
The wide operating temperature range of -40°C makes this IGBT suitable for use in various environmental conditions and temperature extremes.
With a high maximum collector current rating of 55 A, this IGBT can handle large current loads, making it ideal for high-power applications.
The tin terminal finish provides corrosion resistance and ensures reliable electrical connections, enhancing the longevity and performance of the IGBT.
The single terminal position simplifies installation and wiring, ensuring easy integration into circuit designs and reducing complexity in connection arrangements.
The fast turn-on time of 31 ns allows for quick response and efficient switching operations, enabling precise control and high performance in power applications.
Insulated Gate Bipolar Transistors (IGBT) IKW30N65H5XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Maximum Collector Current (IC):
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Configuration:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
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Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
IKW30N65H5XKSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
2N7002-7-F
Diodes Incorporated
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
Onsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
1N5819HW-7-F
1N5819HW-7-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 1A output current, and 0.75V forward voltage. It's a surface mount device in a small outline package ideal for efficiency applications at temperatures ranging from -65 to 125°C.
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
LM555CM
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148
Sinyork
RECTIFIER DIODE; Surface Mount: NO; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Output Current: .15 A; Maximum Repetitive Peak Reverse Voltage: 100 V; No. of Phases: 1;
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
BSS138-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .2 A; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
Comset Semiconductors
Diotec Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain-Source On Resistance: 3.5 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
LM78L05ACMX/NOPB
Texas Instruments
LM78L05ACMX/NOPB by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 0.1A. It operates b/w 0-125°C, has a dropout voltage of 1.6V, and can handle input voltages up to 30V making it ideal for various electronic applications requiring stable power supply.
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
USB3320C-EZK-TR
Standard Microsystems
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
FT150R12KE3GB4BDLA1
Infineon Technologies
Infineon Technologies' FT150R12KE3GB4BDLA1 is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 200A. It is commonly used for power control applications due to its common collector configuration and built-in diode and resistor.
IRG4PC50UD-EPBF
IRG4PC50UD-EPBF by Infineon Technologies is an N-channel IGBT with a max collector-emitter voltage of 600V and a collector current of 55A. It has a nominal turn-off time of 370ns and turn-on time of 71ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode configuration.
HGTG18N120BND
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 18 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE;
FS200R12KT4RB11BOSA1
Infineon's FS200R12KT4RB11BOSA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 1200V and max current of 280A for power control applications. UL approved, it features a turn off time of 600ns and turn on time of 190ns in a flange mount package.
IRG4PC50FDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Qualification: Not Qualified;
IRG4BC30FDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; JESD-609 Code: e3;
IKW25N120H3
IKW25N120H3 by Infineon Technologies is a N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and max collector current of 50A. It is used for power control applications, offering a nominal turn-off time of 397ns and max power dissipation of 326W.
IKW40N65ES5XKSA1
IKW40N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 79A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 204ns and nominal turn-on time of 36ns, suitable for high-speed switching operations.
SGD02N60BUMA1
Infineon's SGD02N60BUMA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 6A max collector current. Ideal for motor control applications, it has a turn-off time of 354ns and turn-on time of 34ns. This surface-mount device in a rectangular package is designed for efficient power management at up to 150°C operating temperature.
STGD3HF60HDT4
STMicroelectronics
STGD3HF60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 38W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and small outline package style.
HGTG30N60C3D
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;
AUIRG4BC30SSTRL
AUIRG4BC30SSTRL by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration, suitable for power control applications, with a max power dissipation of 100W. This surface-mount device has a rectangular package shape and GULL WING terminals, making it ideal for high-power electronic systems.
FF300R12KT4HOSA1
FF300R12KT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a max voltage of 1200V, and a max current of 450A. It has a nominal turn-off time of 720ns and turn-on time of 230ns. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
FGH40N60SMD
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 349 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
FF450R12KE4EHOSA1
FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.
FB30R06W1E3ENG
Infineon's FB30R06W1E3ENG IGBT features 600V VCE, 39A IC, and 115W power dissipation. Ideal for high-power applications like motor drives due to its fast turn-off time of 245ns and low VCEsat of 2V. With an operating temperature range from -40°C to 150°C, it ensures reliable performance in various environments.
FGH40N60UFTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
AUIRGP4066D1-E
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 140 A; Transistor Application: POWER CONTROL;
IRG7PH35UD-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 50 A; Terminal Finish: MATTE TIN OVER NICKEL;
IKW30N60DTPXKSA1
IKW30N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 1.8V, IC of 53A, and Pmax of 200W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 279ns and high operating temperature range (-40 to 175°C).
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 53 A; Terminal Finish: TIN;
IKW30N60TFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; Additional Features: HIGH SWITCHING SPEED;
IKW30N60H3FKSA1
IKW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It is designed for power control applications, offering a nominal turn-off time of 262ns and a nominal turn-on time of 50ns.
IKW30N60TXK
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Terminal Form: THROUGH-HOLE; No. of Terminals: 3;
IKW30N60H3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel; Terminal Finish: TIN;
IKW30N65EL5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Terminal Form: THROUGH-HOLE; Nominal Turn On Time (ton): 44 ns;
IKW30N65ES5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 62 A; Package Style (Meter): FLANGE MOUNT; Nominal Turn Off Time (toff): 204 ns;
IKW30N60TA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Collector Current (IC): 60 A; Maximum VCEsat: 2.05 V;
IKW30N65WR5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Terminal Position: SINGLE; JEDEC-95 Code: TO-247;
IKW30N65H5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 55 A; Maximum Gate-Emitter Voltage: 20 V;
IKW30N60TAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;
IKW30N65NL5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; Maximum Collector Current (IC): 85 A; Maximum Gate-Emitter Threshold Voltage: 5.8 V;
IKW30N65NL5XKSA
N-Channel; Maximum Power Dissipation (Abs): 227 W; Maximum Collector Current (IC): 85 A; Maximum Gate-Emitter Threshold Voltage: 5.8 V; Maximum Operating Temperature: 175 Cel; Maximum Collector-Emitter Voltage: 650 V;
IKW30N60DTP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 53 A; Terminal Form: THROUGH-HOLE;
IKW30N65NL5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
IKW30N65EL5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; Maximum Collector Current (IC): 85 A; Nominal Turn On Time (ton): 44 ns;
IKW30N100T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Package Shape: RECTANGULAR; Transistor Application: POWER CONTROL;
IKW30N60T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 187 W; Maximum Collector Current (IC): 60 A; Additional Features: HIGH SWITCHING SPEED;
IKW30N65ES5
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 62 A; No. of Terminals: 3;
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