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FGD3050G2

Onsemi

FGD3050G2 by Onsemi

FGD3050G2 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.2V and a max IC of 32A. Ideal for automotive ignition applications, it features a built-in diode and resistor in a small outline package style. With surface mount capability, it operates b/w -40 to 175 °C with peak reflow temperature at 260 °C.

Median Price

$3.350

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 11,998 parts In-Stock

1+ parts

$3.350

100+ parts

$1.520

1k+ parts

$1.310

10k+ parts

$1.060

11,998

$3.350

$1.520

$1.310

$1.060

DigiKey

USA . 2,942 parts In-Stock

1+ parts

$3.350

100+ parts

$1.517

1k+ parts

$1.302

10k+ parts

$1.063

2,942

$3.350

$1.517

$1.302

$1.063

Verical

USA . 62,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.070

62,500

-

-

-

$1.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 843 parts In-Stock

1+ parts

$2.404

100+ parts

-

1k+ parts

-

10k+ parts

-

843

$2.404

-

-

-

Vyrian

USA . 1,997 parts In-Stock

1+ parts

$2.530

100+ parts

-

1k+ parts

-

10k+ parts

-

1,997

$2.530

-

-

-

Flip Electronics

USA . 63,082 parts In-Stock

1+ parts

-

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-

1k+ parts

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63,082

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,548 parts In-Stock

1+ parts

$2.277

100+ parts

-

1k+ parts

-

10k+ parts

-

1,548

$2.277

-

-

-

Corohmni

South Africa . 185 parts In-Stock

1+ parts

$2.530

100+ parts

-

1k+ parts

-

10k+ parts

-

185

$2.530

-

-

-

Microchip USA

USA . 2,508 parts In-Stock

1+ parts

$6.257

100+ parts

-

1k+ parts

-

10k+ parts

-

2,508

$6.257

-

-

-

Perfect Parts

USA . 10,226 parts In-Stock

1+ parts

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100+ parts

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10,226

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SupplyDigital Components

Austria . 8,174 parts In-Stock

1+ parts

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8,174

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Kulean Microsystems

USA . 7,084 parts In-Stock

1+ parts

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7,084

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-

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TANS Electronics

Latvia . 6,269 parts In-Stock

1+ parts

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6,269

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Problanco Electronics

Mexico . 3,458 parts In-Stock

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3,458

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Northwest PG Solutions

USA . 2,115 parts In-Stock

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2,115

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Native Components

USA . 745 parts In-Stock

1+ parts

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745

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UHIMA Technologies

Türkiye . 632 parts In-Stock

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632

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Authorized Procurement Solutions

USA . 200 parts In-Stock

1+ parts

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200

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GreenTree Electronics

Israel . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Overview

Revolutionize your automotive ignition systems with the FGD3050G2 by Onsemi, a high-quality Insulated Gate Bipolar Transistor (IGBT) designed for peak performance in the most demanding applications. With its single configuration, built-in diode and resistor, and N-Channel polarity, this IGBT offers unrivaled reliability and efficiency. Whether you're looking to enhance the power dissipation, reduce rise and fall times, or optimize overall system performance, the FGD3050G2 delivers unmatched value and benefits. Trust Onsemi's reputation for cutting-edge technology and experience the difference with the FGD3050G2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection, making the device reliable and long-lasting

Polarity or Channel Type: N-CHANNEL

Offers efficient performance and low power loss

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition applications, ensuring reliable performance in this critical system

Surface Mount: YES

Easy to install and suitable for automated production processes

Maximum Rise Time (tr): 7000 ns

Provides fast switching speed for quick response times

Maximum VCEsat: 1.2 V

Low saturation voltage minimizes power loss and improves efficiency

Package Shape: RECTANGULAR

Optimal shape for efficient packing and thermal management

Terminal Form: GULL WING

Facilitates easy PCB mounting and soldering

Maximum Fall Time (tf): 15000 ns

Ensures controlled turn-off characteristic for safe operation

Nominal Turn Off Time (toff): 6800 ns

Provides specified turn-off time for precise control

No. of Terminals: 2

Simplifies connection and reduces complexity

Maximum Power Dissipation (Abs): 150 W

Can handle high power applications with ease

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications

Maximum Operating Temperature: 175 °C

Can operate reliably in high-temperature environments

Maximum Collector-Emitter Voltage: 495 V

High voltage rating allows for versatile applications

Transistor Element Material: SILICON

Reliable and widely used semiconductor material

Maximum Turn On Time (ton): 11000 ns

Provides fast turn-on response for efficient operation

Maximum Gate-Emitter Voltage: 10 V

Safe operating range for gate control

Minimum Operating Temperature: -40 °C

Can function in low-temperature environments

Maximum Collector Current (IC): 32 A

High current rating for demanding applications

Maximum Gate-Emitter Threshold Voltage: 2.2 V

Optimal threshold voltage for reliable switching

Maximum Turn Off Time (toff): 30000 ns

Ensures precise turn-off timing for controlled operation

Terminal Finish: MATTE TIN

Provides good contact and solderability

Terminal Position: SINGLE

Simplifies PCB layout and connection

Case Connection: COLLECTOR

Convenient connection for easy circuit design

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during assembly

Peak Reflow Temperature °C: 260

Suitable for high-temperature solder reflow processes

Nominal Turn On Time (ton): 2500 ns

Fast turn-on time for efficient operation

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGD3050G2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

495 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

10 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

30000 ns

Nominal Turn Off Time (toff):

6800 ns

Maximum Turn On Time (ton):

11000 ns

Nominal Turn On Time (ton):

2500 ns

Maximum VCEsat:

1.2 V

Trade Compliance

FGD3050G2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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