Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 175 Cel;
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Insulated Gate Bipolar Transistors (IGBT) IRG7PH42UD2PBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier
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IRG7PH42UD2PBF Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
SMBJ18CA
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
M39029/58-360
Amphenol
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
Eic Semiconductor
LM317T
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
Wuxi Xuyang Electronic
Weitronic Enterprise
2N2222A
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
B340A-13-F
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
Rugao Dachang Electronic
1N4148WS
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Multicomp Pro
TCA6424ARGJR
Texas Instruments
TCA6424ARGJR by Texas Instruments is a CMOS parallel I/O port with 24 bits and 3 ports. It operates b/w -40 to 85°C, suitable for industrial applications. With a max clock frequency of 0.4 MHz, it offers low power consumption at only 0.03 mA supply current.
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
C1210C104K5RACTU
KEMET Corporation
KEMET C1210C104K5RACTU is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics and ±10% tolerance, suitable for surface mount applications in a wide temperature range from -55°C to 125°C. Its compact rectangular package makes it ideal for various electronic devices.
MC33269T-3.3G
Onsemi
MC33269T-3.3G by Onsemi is a fixed positive single output LDO regulator with a max output current of 0.8 A and a dropout voltage of 1.35 V. It is commonly used in applications that require stable voltage regulation, such as power supplies for electronic devices.
MMBF170LT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
Hitano Enterprise
LM7805CT/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
APT200GN60JDQ4
Microchip Technology
Microchip Technology's APT200GN60JDQ4 is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 283A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 660ns turn off time, and 130ns turn on time. Package style is flange mount with plastic/epoxy body material.
FGH40N60UFTU
FGH40N60UFTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max collector current of 80A. It has a power dissipation of 290W, making it suitable for power control applications. With a turn-off time of 190ns and turn-on time of 110ns, it offers efficient switching performance in various industrial settings.
FF450R12KT4F
Infineon Technologies
Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
IRG4BC30S-STRLP
IRG4BC30S-STRLP by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 600V and a Max Collector Current of 34A. It has a Nominal Turn Off Time of 1550ns and Nominal Turn On Time of 40ns, making it ideal for POWER CONTROL applications requiring fast switching speeds. This IGBT comes in a RECTANGULAR package style with GULL WING terminals, suitable for surface mount assembly in various electronic devices.
HGTG30N60C3D
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Terminal Form: THROUGH-HOLE;
IKW40N60H3FKSA1
IKW40N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 249ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Operates at a max temperature of 175°C in a PLASTIC/EPOXY package style.
HGTG10N120BND
HGTG10N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 35A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn off time of 330ns. Package style: Flange mount, terminal finish: Matte Tin, operating temp: 150°C.
SKM100GB063D
Semikron International
SKM100GB063D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.5V, Max IC of 130A, and can handle up to 450W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 335ns and high collector-emitter voltage of 600V.
IRGB20B60PD1PBF
IRGB20B60PD1PBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 215W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast rise time of 8ns. Suitable for use in high-power systems requiring efficient switching capabilities.
IKW25T120FKSA1
IKW25T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 50A. It has a nominal turn-off time of 790ns and is designed for power control applications. The transistor comes in a rectangular package with through-hole terminals, making it suitable for high-power switching operations at temperatures up to 150°C.
STGW60V60DF
STMicroelectronics
STGW60V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 375W Pd. It operates up to 175°C making it ideal for high-power applications in industries like automotive and renewable energy.
FP25R12W1T7B11BPSA1
Infineon Technologies' FP25R12W1T7B11BPSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 25A max collector current, and 730ns nominal turn off time. Ideal for power control applications due to its complex configuration and silicon transistor element material.
HGTG18N120BND
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 54 A; JESD-30 Code: R-PSFM-T3;
SKM150GM12T4G
Semikron International's SKM150GM12T4G is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max VCEsat of 2.1V, IC of 229A, and toff of 482ns. Ideal for power control applications due to its high collector-emitter voltage of 1200V and fast turn-on time (ton) of 222ns at a max operating temp of 175°C.
NGTB25N120FL3WG
NGTB25N120FL3WG by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 50A IC, and 349W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. This FLANGE MOUNT device has a turn-off time of 282ns and turn-on time of 36ns.
ISL9V3036S3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Peak Reflow Temperature (C): 260;
STGP35HF60W
STMicroelectronics' STGP35HF60W is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W power dissipation. It operates up to 150°C and has a gate-emitter threshold voltage of 5.75V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
STGW30NC120HD
STGW30NC120HD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 170W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 928ns.
IGW25T120FKSA1
IGW25T120FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, ideal for power control applications. Featuring a 50A max collector current and 790ns turn off time, it operates at up to 150°C. This single configuration transistor has a through-hole terminal form in a rectangular package style.
2PS18012E44G40113NOSA1
2PS18012E44G40113NOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. Ideal for power control applications, it operates b/w -25°C to 60°C. Featuring a complex configuration and isolated case connection, this microelectronic assembly contains 8 elements made of silicon.
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IRG7PH35UD-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 50 A; Package Body Material: PLASTIC/EPOXY;
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 50 A; Terminal Finish: MATTE TIN OVER NICKEL;
IRG7PH42UDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; Qualification: Not Qualified;
IRG7PH42UD-EP
IRG7PH42UD-EP by Infineon is an N-channel IGBT with 1200V max collector-emitter voltage and 85A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a max power dissipation of 320W and operating temperature of 150°C, it offers fast switching times of 41ns rise, 86ns fall, and 444ns turn-off.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 85 A; JESD-609 Code: e3;
IRG7PH42UD2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN OVER NICKEL; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Terminals: 3; Case Connection: COLLECTOR;
IRG7PH50K10D-EPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 30 V;
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Fall Time (tf): 110 ns;
IRG7PH42U-EP
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 385 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Terminal Finish: MATTE TIN OVER NICKEL;
IRG7PH42U-EP by Infineon Technologies is an N-CHANNEL IGBT with tr of 41 ns, tf of 86 ns, and Abs of 385 W. It operates at a max temp of 175°C and has VCE of 1200V. With IC up to 90A, it's ideal for high-power applications like motor drives and inverters.
IRG7PH42UD2PBF
IRG7PH42UD2PBF by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 30V. It is designed for power control applications and has a max power dissipation of 321W.
IRG7PH42UD1-EP
IRG7PH42UD1-EP by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 1200V. It has a max power dissipation of 313W and is designed for power control applications. The transistor has a rectangular package shape and a through-hole terminal form.
IRG7PH42UD1-EP by International Rectifier is an N-channel IGBT with a max collector-emitter voltage of 1200V. It has a single built-in diode and is used for power control applications.
IRG7PH50K10DPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
Infineon's IRG7PH50K10DPBF is an N-CHANNEL IGBT with 1200V VCE, 90A IC, and 400W power dissipation. Ideal for high-power applications requiring fast switching with tr of 80ns and tf of 110ns. Operates up to 150°C making it suitable for industrial motor drives and renewable energy systems.
IRG7PH42UD1MPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 85 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 85 A; Maximum Fall Time (tf): 43 ns; Maximum Gate-Emitter Voltage: 30 V;
IRG7PH42UD2-EPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 321 W; Maximum Collector Current (IC): 60 A; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;
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