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STGF14N60D

STMicroelectronics

STGF14N60D by STMicroelectronics

STGF14N60D by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 11A IC, and 33W Pd. It operates up to 175 °C making it ideal for power electronics applications requiring high voltage and current handling capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,106 parts In-Stock

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5,106

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Digiode

USA . 4,344 parts In-Stock

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4,344

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Anansix

USA . 2,222 parts In-Stock

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2,222

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,094 parts In-Stock

1+ parts

$0.893

100+ parts

-

1k+ parts

$0.804

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-

2,094

$0.893

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$0.804

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MKK Technologies

India . 2,068 parts In-Stock

1+ parts

$1.680

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2,068

$1.680

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DigiPath Technology Company

USA . 2,068 parts In-Stock

1+ parts

$1.680

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2,068

$1.680

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AZTECH Wire

Italy . 1,111 parts In-Stock

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$19.980

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1,111

$19.980

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Parana Technologies

USA . 1,799 parts In-Stock

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$1.068

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1,799

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$1.068

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Corphita

USA . 1,330 parts In-Stock

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1,330

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Overview

Experience unparalleled quality and performance with the STGF14N60D insulated gate bipolar transistor by STMicroelectronics. As a trusted manufacturer in the industry, STMicroelectronics delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this N-channel IGBT offers superior power dissipation, operating at temperatures up to 175 °C and providing a maximum collector-emitter voltage of 600V. With a maximum gate-emitter threshold voltage of 6.5V and a collector current of 11A, this transistor is a reliable choice for your projects. Unlock the potential of your designs with the STGF14N60D and elevate your creations to new heights.

Feature Benefit Bullets

Polarity/Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for applications requiring high power densities.

Maximum Power Dissipation (Abs): 33W

With a high power dissipation rating of 33W, this IGBT can handle significant power levels without overheating, ensuring reliable operation in demanding conditions.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175 °C allows this IGBT to withstand elevated temperatures, making it suitable for use in a wide range of industrial applications.

Maximum Collector-Emitter Voltage: 600V

With a high maximum collector-emitter voltage rating of 600V, this IGBT can be used in high voltage applications where robustness and reliability are crucial.

Maximum Gate-Emitter Voltage: 20V

The 20V maximum gate-emitter voltage ensures safe and efficient control of the IGBT, enabling precise switching and protection against voltage spikes.

Maximum Collector Current (IC): 11A

The high maximum collector current of 11A allows this IGBT to handle significant current levels, making it suitable for high-power applications.

Maximum Gate-Emitter Threshold Voltage: 6.5V

The 6.5V maximum gate-emitter threshold voltage ensures reliable turn-on and turn-off of the IGBT, enabling precise control and efficient operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) STGF14N60D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

STGF14N60D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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