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IRG4PH20KPBF

International Rectifier

IRG4PH20KPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Maximum Collector Current (IC): 11 A; Terminal Form: THROUGH-HOLE;

Median Price

$3.630

Lifecycle Status

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4

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 93 parts In-Stock

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$3.630

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Vyrian

USA . 776 parts In-Stock

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Digiode

USA . 31 parts In-Stock

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ComSIT Distribution GmbH

Germany . 18 parts In-Stock

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Ampacity Inc.

Singapore . 288 parts In-Stock

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$1.050

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Modulus Dynamics

Lithuania . 1,325 parts In-Stock

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$3.630

100+ parts

$3.485

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$3.340

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1,325

$3.630

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$3.340

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Continental Prestige Electronics

USA . 3,201 parts In-Stock

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$3.630

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$3.557

3,201

$3.630

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Argo Parts USA

USA . 205 parts In-Stock

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$3.630

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205

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AZTECH Wire

Italy . 411 parts In-Stock

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$19.212

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Perfect Parts

USA . 2,324 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$3.557

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$3.449

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$3.376

500

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$3.557

$3.449

$3.376

Authorized Procurement Solutions

USA . 95 parts In-Stock

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GreenTree Electronics

Israel . 95 parts In-Stock

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Corphita

USA . 82 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4PH20KPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Fall Time (tf):

400 ns

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

720 ns

Nominal Turn On Time (ton):

51 ns

Trade Compliance

IRG4PH20KPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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