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SKM300GB12T4

Semikron International

SKM300GB12T4 by Semikron International

SKM300GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 422A, and toff of 540ns. Ideal for POWER CONTROL applications, it operates b/w -40°C to 175°C with a VCE max of 1200V.

Median Price

$229.630

Lifecycle Status

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UK . 6 parts In-Stock

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$181.370

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$163.230

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Farnell

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Element14

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Aztec Data Supply Inc.

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AZTECH Wire

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Continental Prestige Electronics

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Overview

Upgrade your power control game with the SKM300GB12T4 by Semikron International. As a leading manufacturer in insulated gate bipolar transistors (IGBT), Semikron International delivers top-notch quality and innovation in their products. With its N-channel configuration, this device offers reliable performance and efficiency for a variety of applications. Whether you're looking to optimize power control in industrial settings or enhance performance in renewable energy systems, the SKM300GB12T4 provides unmatched value, benefits, and advantages that will elevate your projects to new heights. Experience the difference with Semikron International.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

The series connected configuration with built-in diode allows for more efficient power control and protection against reverse voltage spikes.

Maximum VCEsat: 2.1 V

Low VCEsat ensures minimal power loss and high efficiency in power control applications.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating allows for use in high voltage applications, providing versatility and reliability.

Maximum Collector Current (IC): 422 A

High collector current rating enables the transistor to handle large currents, making it suitable for high power applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Low gate-emitter threshold voltage allows for precise control of the IGBT, contributing to efficient power management.

Nominal Turn Off Time (toff): 540 ns

Fast turn off time ensures quick switching and reduced power loss, enhancing overall performance of the transistor.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM300GB12T4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

IEC-60747-1; UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

540 ns

Nominal Turn On Time (ton):

244 ns

Maximum VCEsat:

2.1 V

Trade Compliance

SKM300GB12T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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