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SKM300GB123D

Semikron International

SKM300GB123D by Semikron International

Semikron International's SKM300GB123D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3V and can handle up to 300A Collector Current. Ideal for POWER CONTROL applications, this device operates at temperatures up to 150°C, making it suitable for high-power systems.

Median Price

$170.060

Lifecycle Status

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< 1k

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$159.250

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Nova Conductors

Japan . 300 parts In-Stock

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$180.870

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Rebound Electronics

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Fibra_Brandt Electronic GMBH

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Netherlands . 2 parts In-Stock

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AZTECH Wire

Italy . 572 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$180.870

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$171.826

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$168.209

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Assy Fe

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Overview

Semikron International presents the SKM300GB123D, a top-of-the-line Insulated Gate Bipolar Transistor designed for power control applications. With a maximum collector current of 300 A and a nominal turn-off time of 620 ns, this N-channel transistor offers superior performance and reliability. The innovative design features two elements with built-in diodes, allowing for efficient power dissipation up to 1400 W. Whether you're in the industrial, automotive, or renewable energy sector, this transistor is the perfect choice for your high-power needs. Trust Semikron International for quality products that deliver exceptional value and benefits to customers.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for efficient power control and protection with the built-in diode, making it a versatile option for various applications.

Maximum VCEsat: 3 V

Low VCEsat ensures minimal power loss during operation, improving overall efficiency of the device.

Maximum Power Dissipation (Abs): 1400 W

With a high power dissipation rating, this IGBT can handle high power levels, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 1200 V

The high voltage rating allows for use in high voltage circuits, providing versatility in different power control scenarios.

Maximum Collector Current (IC): 300 A

High collector current rating enables the device to handle large current loads, making it suitable for power control applications where high currents are involved.

Nominal Turn Off Time (toff): 620 ns

Fast turn-off time ensures efficient switching and reduces power loss during operation.

Nominal Turn On Time (ton): 340 ns

Fast turn-on time enables quick response in power control applications, improving overall performance of the device.

Reference Standard: UL RECOGNIZED

UL recognition ensures that the product meets safety standards and quality requirements, giving assurance of reliability in usage.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM300GB123D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

JESD-609 Code:

e3/e4

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN/SILVER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

620 ns

Nominal Turn On Time (ton):

340 ns

Maximum VCEsat:

3 V

Trade Compliance

SKM300GB123D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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