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SKM300GB12F4

Semikron International

SKM300GB12F4 by Semikron International

Semikron International's SKM300GB12F4 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, VCEsat of 2.42V, and IC of 380A. Ideal for POWER CONTROL applications, it operates at -40 to 175 °C with VCE max of 1200V.

Median Price

$325.457

Lifecycle Status

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6

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< 1k

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Farnell

UK . 9 parts In-Stock

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$229.480

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RS (Exports)

UK . 10 parts In-Stock

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$325.457

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Element14

Singapore . 9 parts In-Stock

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$390.160

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Nova Conductors

Japan . 66 parts In-Stock

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$194.507

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Infinite Electronics LLP

India . 48 parts In-Stock

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Vyrian

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AZTECH Wire

Italy . 207 parts In-Stock

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$5.537

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Netroflash

USA . 50 parts In-Stock

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$194.507

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$184.781

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$180.891

50

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$180.891

Continental Prestige Electronics

USA . 36 parts In-Stock

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$197.480

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Argo Parts USA

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Overview

Upgrade your power control with the SKM300GB12F4 by Semikron International. This insulated gate bipolar transistor (IGBT) boasts top-notch quality and reliability, thanks to its N-CHANNEL configuration and series-connected design. Perfect for a wide range of applications, from industrial machinery to renewable energy systems, this transistor offers unmatched performance with a maximum collector-emitter voltage of 1200V and a maximum collector current of 380A. Trust Semikron International to deliver cutting-edge technology that enhances your power management solutions.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - Provides high efficiency and fast switching speed, making it ideal for power control applications.

Configuration:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE - Allows for easy integration and usage in various circuit designs.

Transistor Application:

POWER CONTROL - Specifically designed for power control applications, ensuring reliable performance.

Maximum VCEsat:

2.42 V - Low saturation voltage minimizes power loss and improves efficiency of the device.

Package Shape:

RECTANGULAR - Offers a compact and space-efficient design for easy installation in different systems.

No. of Elements:

2 - Provides redundancy and backup in case one element fails, enhancing reliability.

Nominal Turn Off Time (toff):

463 ns - Fast turn-off time allows for precise control and operation in high-speed applications.

No. of Terminals:

7 - Offers versatile connectivity options for easy integration into different circuit configurations.

Package Style (Meter):

FLANGE MOUNT - Ensures secure mounting and heat dissipation for optimal performance in various environments.

Maximum Operating Temperature:

175 °C - High operating temperature range enables reliable operation in challenging conditions.

Maximum Collector-Emitter Voltage:

1200 V - High voltage capacity makes it suitable for demanding power control tasks.

Transistor Element Material:

SILICON - Silicon material provides high reliability and long-lasting performance.

Maximum Gate-Emitter Voltage:

20 V - Allows for precise control of the transistor during operation, ensuring consistent results.

Minimum Operating Temperature:

40 °C - Wide temperature range enables usage in extreme environments without performance degradation.

Maximum Collector Current (IC):

380 A - High current handling capability makes it suitable for heavy-duty power control applications.

Maximum Gate-Emitter Threshold Voltage:

6.4 V - Ensures stable and reliable operation of the transistor in various power control scenarios.

Terminal Position:

UPPER - Convenient terminal position for easy connectivity and installation in different circuit layouts.

Case Connection:

ISOLATED - Provides electrical isolation and protection for improved safety and performance.

Nominal Turn On Time (ton):

145 ns - Fast turn-on time allows for quick response and precise control in power management applications.

Reference Standard:

UL RECOGNIZED - Compliance with UL standards ensures high quality and safety standards are met.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM300GB12F4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.4 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

463 ns

Nominal Turn On Time (ton):

145 ns

Maximum VCEsat:

2.42 V

Trade Compliance

SKM300GB12F4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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