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FGL40N120ANDTU

Onsemi

FGL40N120ANDTU by Onsemi

FGL40N120ANDTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 64A. It has a nominal turn-off time of 165ns and a turn-on time of 45ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with flange mount and matte tin terminal finish.

Median Price

$6.275

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 50 parts In-Stock

1+ parts

$6.275

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$6.275

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$6.275

10k+ parts

$6.275

50

$6.275

$6.275

$6.275

$6.275

Rochester

USA . 15,360 parts In-Stock

1+ parts

-

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$5.520

1k+ parts

$4.940

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$4.650

15,360

-

$5.520

$4.940

$4.650

Verical

USA . 15,360 parts In-Stock

1+ parts

-

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$6.900

1k+ parts

$6.175

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$5.813

15,360

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$6.900

$6.175

$5.813

Flip Electronics (Authorized)

USA . 1,125 parts In-Stock

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Digiode

USA . 1,131 parts In-Stock

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$5.961

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1,131

$5.961

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Nova Conductors

Japan . 50 parts In-Stock

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$6.432

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$6.432

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TME

Poland . 36 parts In-Stock

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$9.220

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$5.730

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36

$9.220

$5.730

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Chip Stock

USA . 10,500 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,190 parts In-Stock

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6,190

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ComSIT Distribution GmbH

Germany . 2,009 parts In-Stock

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ComSIT USA

USA . 2,009 parts In-Stock

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Flip Electronics

USA . 1,035 parts In-Stock

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Vyrian

USA . 408 parts In-Stock

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HZD GmbH

Germany . 150 parts In-Stock

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NAC Semi

USA . 100 parts In-Stock

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$8.230

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100

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$8.230

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LWI Electronics Inc

India . 11 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 173 parts In-Stock

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$1.942

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173

$1.942

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Continental Prestige Electronics

USA . 412 parts In-Stock

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$5.250

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$3.930

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412

$5.250

$3.930

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Semicontronic

India . 366 parts In-Stock

1+ parts

$5.330

100+ parts

$5.197

1k+ parts

$5.170

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366

$5.330

$5.197

$5.170

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Ampacity Inc.

Singapore . 137 parts In-Stock

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$5.330

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137

$5.330

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Corphita

USA . 627 parts In-Stock

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$5.648

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627

$5.648

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Corohmni

South Africa . 484 parts In-Stock

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$6.275

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484

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Netroflash

USA . 2,000 parts In-Stock

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$6.432

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$6.432

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Component Stockers USA

USA . 4,935 parts In-Stock

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$16.290

100+ parts

$15.470

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$14.980

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4,935

$16.290

$15.470

$14.980

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Metaverse IC Inc.

Canada . 80,000 parts In-Stock

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Perfect Parts

USA . 53,845 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,534 parts In-Stock

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Robosynatics

Brazil . 20,399 parts In-Stock

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$1.236

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$1.211

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$1.211

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$1.236

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$1.211

Lucentia Tech

USA . 20,399 parts In-Stock

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$1.236

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$1.211

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$1.211

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$1.211

Lixinc

USA . 18,994 parts In-Stock

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SupplyDigital Components

Austria . 8,281 parts In-Stock

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RC Electronics

USA . 6,467 parts In-Stock

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$6.290

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$5.740

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$5.570

6,467

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$5.570

Kepictronics

USA . 5,000 parts In-Stock

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Kulean Microsystems

USA . 4,617 parts In-Stock

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Problanco Electronics

Mexico . 4,186 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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TANS Electronics

Latvia . 3,797 parts In-Stock

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Supply Digital

USA . 1,740 parts In-Stock

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iodParts Technologies Inc.

India . 1,349 parts In-Stock

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$18.105

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Argo Parts USA

USA . 1,145 parts In-Stock

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CPlus Electronics

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 150 parts In-Stock

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Overview

Enhance your power control applications with the FGL40N120ANDTU IGBT by Onsemi. Manufactured with top-quality materials and a single configuration with a built-in diode, this transistor offers unparalleled performance and reliability. Ideal for a wide range of power control tasks, this product boasts a maximum collector-emitter voltage of 1200V and a maximum collector current of 64A, providing customers with exceptional value and benefits. Upgrade your projects today with the FGL40N120ANDTU and experience the difference in quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage drop and better efficiency compared to P-Channel IGBTs.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve overall system efficiency.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable performance in high-power environments.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various systems.

Nominal Turn Off Time (toff): 165 ns

Fast turn-off time helps in reducing switching losses and improving overall efficiency.

No. of Terminals: 3

Suitable for simpler circuits and applications where only three connections are needed.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure and stable mounting in industrial applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, making it suitable for applications with high thermal loads.

Maximum Collector-Emitter Voltage: 1200 V

High voltage rating allows for use in high-power applications without risk of damage.

Transistor Element Material: SILICON

Silicon material ensures good electrical performance and reliability.

Maximum Collector Current (IC): 64 A

Can handle high currents, making it suitable for power control applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies connections and mounting.

Nominal Turn On Time (ton): 45 ns

Fast turn-on time ensures quick response in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGL40N120ANDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

165 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

FGL40N120ANDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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