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FGL40N150D

Fairchild Semiconductor

FGL40N150D by Fairchild Semiconductor

FGL40N150D by Fairchild Semiconductor is an N-CHANNEL IGBT with 1500V VCE, 40A IC, and 200W Ptot. Ideal for power control applications due to its fast tr of 700ns and tf of 300ns. The transistor features a built-in diode, operates at up to 150°C, and has a gate-emitter voltage of 25V.

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Overview

Enhance your power control applications with the FGL40N150D by Fairchild Semiconductor, a top-tier manufacturer known for its high-quality products. This Insulated Gate Bipolar Transistor (IGBT) features a single configuration with a built-in diode, offering customers seamless power management solutions. With a maximum collector current of 40 A and a maximum operating temperature of 150°C, this transistor ensures reliable performance in various industrial settings. Trust Fairchild Semiconductor to deliver exceptional value and efficiency with the FGL40N150D.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and resistant to external elements, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

The N-channel polarity allows for efficient power control and high performance in electronic applications, making this IGBT ideal for power management systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design, reduces component count, and enhances overall system efficiency, making this IGBT a cost-effective and space-saving solution for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT offers superior performance, reliability, and efficiency in managing power flow in various electronic devices and systems.

Maximum Rise Time (tr): 700 ns

The fast rise time of 700 ns enables quick switching speeds, reducing power loss and improving overall system efficiency in power control applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy integration and mounting in electronic systems, optimizing space utilization and ensuring a compact design for various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides robust mechanical connections, ensuring stable and reliable performance in heavy-duty applications where vibration and shock resistance are crucial.

Maximum Fall Time (tf): 300 ns

The fast fall time of 300 ns allows for quick turn-off, minimizing switching losses and improving system efficiency in power control applications.

Nominal Turn Off Time (toff): 300 ns

The nominal turn-off time of 300 ns ensures efficient switching operation, reducing power dissipation and enhancing overall performance in power management systems.

No. of Terminals: 3

The 3 terminals provide easy connectivity and compatibility with standard electronic interfaces, simplifying installation and integration of the IGBT into various power control circuits.

Maximum Power Dissipation (Abs): 200 W

With a maximum power dissipation of 200 W, this IGBT can handle high power levels efficiently, ensuring reliable operation and performance in demanding power control applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting in electronic systems, enhancing thermal management and ensuring reliable operation in high-power applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this IGBT can withstand high temperature environments, making it suitable for a wide range of industrial and automotive applications.

Maximum Collector-Emitter Voltage: 1500 V

The high collector-emitter voltage rating of 1500 V provides robust protection against voltage spikes and surges, ensuring the reliability and safety of the IGBT in power control circuits.

Transistor Element Material: SILICON

The use of silicon as the transistor element material offers high performance, reliability, and efficiency in power control applications, making this IGBT a durable and long-lasting solution.

Maximum Gate-Emitter Voltage: 25 V

The maximum gate-emitter voltage of 25 V ensures proper gate control and stable operation, allowing for precise switching and optimal performance in power management systems.

Maximum Collector Current (IC): 40 A

With a maximum collector current of 40 A, this IGBT can handle high current loads efficiently, making it suitable for power control applications that require reliable and robust performance.

Maximum Gate-Emitter Threshold Voltage: 7.5 V

The maximum gate-emitter threshold voltage of 7.5 V ensures efficient gate triggering and control, enabling reliable and precise switching operation in power management systems.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections and long-term performance in various operating environments.

Terminal Position: SINGLE

The single terminal position simplifies installation and connectivity, enabling easy integration of the IGBT into power control circuits, ensuring convenience and efficiency in system design.

Nominal Turn On Time (ton): 450 ns

The nominal turn-on time of 450 ns allows for quick and precise switching operation, reducing power losses and improving efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGL40N150D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1500 V

Maximum Fall Time (tf):

300 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

700 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

300 ns

Nominal Turn On Time (ton):

450 ns

Trade Compliance

FGL40N150D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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