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IXXN110N65C4H1

IXYS Corporation

IXXN110N65C4H1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 210 A; Maximum VCEsat: 2.35 V;

Median Price

$28.870

Lifecycle Status

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9

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TTI

USA . 212 parts In-Stock

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$20.870

100+ parts

$19.090

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212

$20.870

$19.090

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Farnell

UK . 265 parts In-Stock

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$24.320

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$15.210

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265

$24.320

$15.210

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Mouser Electronics

USA . 837 parts In-Stock

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$27.480

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$22.130

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837

$27.480

$22.130

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DigiKey

USA . 303 parts In-Stock

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$30.260

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$19.094

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303

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Newark

USA . 111 parts In-Stock

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$31.170

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$19.660

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111

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Element14

Singapore . 210 parts In-Stock

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$39.870

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$34.040

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$33.330

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210

$39.870

$34.040

$33.330

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Nova Conductors

Japan . 200 parts In-Stock

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$26.971

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200

$26.971

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Rutronik

Germany . 430 parts In-Stock

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$27.130

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Vyrian

USA . 244 parts In-Stock

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Aztec Data Supply Inc.

USA . 187 parts In-Stock

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$1.274

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$1.274

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Corohmni

South Africa . 86 parts In-Stock

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$1.896

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Ampacity Inc.

Singapore . 253 parts In-Stock

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Semicontronic

India . 253 parts In-Stock

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$19.646

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$19.546

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253

$20.150

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$19.546

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Advanced Electronics

New Zealand . 53 parts In-Stock

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$26.635

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$26.635

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$26.635

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$26.635

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Netroflash

USA . 1,000 parts In-Stock

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$26.971

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Continental Prestige Electronics

USA . 35 parts In-Stock

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$28.310

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$22.290

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Microchip USA

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$74.106

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Argo Parts USA

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4,955

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Perfect Parts

USA . 26 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXN110N65C4H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

160 ns

Nominal Turn On Time (ton):

71 ns

Maximum VCEsat:

2.35 V

Trade Compliance

IXXN110N65C4H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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