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IXXN340N65B4

Littelfuse

IXXN340N65B4 by Littelfuse

IXXN340N65B4 by Littelfuse is an N-CHANNEL IGBT with 650V VCEsat, 520A IC, and 1500W power dissipation. Ideal for power control applications, it features a fast turn-off time of 346ns and operates b/w -55°C to 175°C.

Median Price

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< 1k

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Nova Conductors

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200

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Ampacity Inc.

Singapore . 1,234 parts In-Stock

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$0.050

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Microchip USA

USA . 6,531 parts In-Stock

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$154.634

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6,531

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 2,010 parts In-Stock

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Aranea Global

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2,000

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Continental Prestige Electronics

USA . 1,852 parts In-Stock

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1,852

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Overview

Enhance your power control applications with the IXXN340N65B4 by Littelfuse, a top-quality Insulated Gate Bipolar Transistor (IGBT) designed for maximum performance and efficiency. With Littelfuse's reputation for excellence in manufacturing, this N-CHANNEL transistor offers customers unparalleled reliability and durability. Ideal for a wide range of power control tasks, this single-configured IGBT boasts a maximum collector-emitter voltage of 650V and a maximum collector current of 520A, ensuring optimal power handling capabilities. Experience the benefits of seamless operation and superior power dissipation with the IXXN340N65B4, setting a new standard in power control technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the IGBT reliable for long-term use.

Maximum VCEsat: 1.7 V

Low VCEsat helps to minimize power loss and improve efficiency in power control applications.

Nominal Turn Off Time (toff): 346 ns

Fast turn-off time allows for quick switching and precise control of the power flow, enhancing performance.

Maximum Power Dissipation (Abs): 1500 W

High power dissipation capability enables the IGBT to handle heavy loads and high-power applications.

Maximum Collector-Emitter Voltage: 650 V

High VCE voltage rating makes the IGBT suitable for high voltage applications, ensuring robust performance.

Maximum Collector Current (IC): 520 A

High collector current rating allows the IGBT to handle large current flows, making it versatile for various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXN340N65B4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

346 ns

Nominal Turn On Time (ton):

119 ns

Maximum VCEsat:

1.7 V

Trade Compliance

IXXN340N65B4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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