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FGP10N60UNDF

Onsemi

FGP10N60UNDF by Onsemi

FGP10N60UNDF by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 139W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.

Median Price

$1.160

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,785 parts In-Stock

1+ parts

$0.798

100+ parts

-

1k+ parts

$0.778

10k+ parts

-

5,785

$0.798

-

$0.778

-

Chip1Stop

Japan . 5,785 parts In-Stock

1+ parts

$1.180

100+ parts

-

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-

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5,785

$1.180

-

-

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Mouser Electronics

USA . 1,015 parts In-Stock

1+ parts

$1.320

100+ parts

$0.956

1k+ parts

$0.812

10k+ parts

-

1,015

$1.320

$0.956

$0.812

-

Rochester

USA . 64,575 parts In-Stock

1+ parts

-

100+ parts

$1.160

1k+ parts

$0.960

10k+ parts

$0.855

64,575

-

$1.160

$0.960

$0.855

Farnell

UK . 64,000 parts In-Stock

1+ parts

-

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$0.907

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64,000

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-

$0.907

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Verical

USA . 40,800 parts In-Stock

1+ parts

-

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$1.007

10k+ parts

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40,800

-

-

$1.007

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Flip Electronics (Authorized)

USA . 6,800 parts In-Stock

1+ parts

-

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6,800

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DigiKey

USA . 495 parts In-Stock

1+ parts

-

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$1.210

10k+ parts

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495

-

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$1.210

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,589 parts In-Stock

1+ parts

$0.660

100+ parts

-

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2,589

$0.660

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.956

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10

$0.956

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Vyrian

USA . 19,271 parts In-Stock

1+ parts

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19,271

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Flip Electronics

USA . 6,800 parts In-Stock

1+ parts

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6,800

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DigiKey Marketplace

USA . 800 parts In-Stock

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800

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Lantek

USA . 36 parts In-Stock

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36

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Distributors (Availability)

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Corohmni

South Africa . 233 parts In-Stock

1+ parts

$0.609

100+ parts

-

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233

$0.609

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Corphita

USA . 1,278 parts In-Stock

1+ parts

$0.626

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1,278

$0.626

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Ampacity Inc.

Singapore . 23,348 parts In-Stock

1+ parts

$0.680

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23,348

$0.680

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Argo Parts USA

USA . 1,782 parts In-Stock

1+ parts

$0.956

100+ parts

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1,782

$0.956

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Continental Prestige Electronics

USA . 42,400 parts In-Stock

1+ parts

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100+ parts

$0.686

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42,400

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$0.686

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QUARKTWIN TECHNOLOGY LTD

USA . 16,125 parts In-Stock

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16,125

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TANS Electronics

Latvia . 7,100 parts In-Stock

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Problanco Electronics

Mexico . 6,755 parts In-Stock

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6,755

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Kulean Microsystems

USA . 6,202 parts In-Stock

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Microchip USA

USA . 5,121 parts In-Stock

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5,121

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Kepictronics

USA . 4,800 parts In-Stock

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4,800

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Supply Digital

USA . 2,271 parts In-Stock

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2,271

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Perfect Parts

USA . 2,112 parts In-Stock

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2,112

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Authorized Procurement Solutions

USA . 1,600 parts In-Stock

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1,600

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SupplyDigital Components

Austria . 1,108 parts In-Stock

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1,108

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Netroflash

USA . 500 parts In-Stock

1+ parts

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100+ parts

$0.936

1k+ parts

$0.908

10k+ parts

$0.889

500

-

$0.936

$0.908

$0.889

UHIMA Technologies

Türkiye . 186 parts In-Stock

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186

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GreenTree Electronics

Israel . 36 parts In-Stock

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36

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Overview

Experience the power of innovation with the FGP10N60UNDF from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are designed for exceptional performance in motor control applications. With a single configuration and built-in diode, this product offers unmatched reliability and efficiency. Trust Onsemi to provide you with a solution that exceeds your expectations, delivering value and benefits that will elevate your projects to new heights. Choose Onsemi for quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body makes the IGBT lightweight and durable, ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer lower on-state power losses, making them efficient for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

This configuration simplifies circuit design and saves space by integrating a diode within the IGBT package.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring reliable and efficient operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and secure placement within a circuit.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong mechanical connection, suitable for demanding motor control applications.

Maximum Fall Time (tf): 24.8 ns

The fast fall time of 24.8 ns improves switching performance, reducing power losses and increasing efficiency.

Nominal Turn Off Time (toff): 89.3 ns

The nominal turn off time of 89.3 ns ensures quick switching transitions, crucial for motor control applications.

No. of Terminals: 3

With 3 terminals, the IGBT is easy to connect within a circuit, simplifying integration and reducing installation time.

Maximum Power Dissipation (Abs): 139 W

The high maximum power dissipation of 139 W allows the IGBT to handle heavy loads and high-power applications effectively.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure and stable mounting option for the IGBT, ensuring reliable operation.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the IGBT can withstand high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V makes the IGBT suitable for high-voltage applications, such as motor control.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures high reliability, stability, and performance in various operating conditions.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage of 20 V ensures safe and reliable operation within specified voltage limits.

Maximum Collector Current (IC): 20 A

The maximum collector current of 20 A allows the IGBT to handle high current loads, making it versatile for motor control applications.

Maximum Gate-Emitter Threshold Voltage: 8.5 V

The maximum gate-emitter threshold voltage of 8.5 V ensures precise control and switching characteristics in motor control applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a reliable electrical connection and corrosion resistance, ensuring long-term performance.

Terminal Position: SINGLE

With a single terminal position, the IGBT is easy to install and connect within a circuit, improving overall system reliability.

Nominal Turn On Time (ton): 15.4 ns

The nominal turn on time of 15.4 ns ensures quick switching transitions, essential for efficient motor control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGP10N60UNDF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

24.8 ns

Maximum Gate-Emitter Threshold Voltage:

8.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

89.3 ns

Nominal Turn On Time (ton):

15.4 ns

Trade Compliance

FGP10N60UNDF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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