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FGP15N60UNDF

Onsemi

FGP15N60UNDF by Onsemi

FGP15N60UNDF by Onsemi is an N-CHANNEL IGBT transistor with a max Collector-Emitter Voltage of 600V and Max Collector Current of 30A. It is designed for MOTOR CONTROL applications, featuring a Nominal Turn Off Time of 69.8ns and Max Power Dissipation of 178W.

Median Price

$1.460

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,286 parts In-Stock

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-

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$1.460

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$1.210

10k+ parts

$1.080

1,286

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$1.460

$1.210

$1.080

Distributors (In-Stock)

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Digiode

USA . 866 parts In-Stock

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$1.130

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$1.130

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Vyrian

USA . 1,038 parts In-Stock

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$1.190

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Chip Stock

USA . 4,420 parts In-Stock

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ComSIT Distribution GmbH

Germany . 20 parts In-Stock

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Corphita

USA . 1,697 parts In-Stock

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$1.071

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Corohmni

South Africa . 476 parts In-Stock

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$1.190

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476

$1.190

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Native Components

USA . 161 parts In-Stock

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$6.646

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Component Stockers USA

USA . 635 parts In-Stock

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$99.990

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635

$99.990

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Perfect Parts

USA . 118,917 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

Mexico . 7,637 parts In-Stock

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TANS Electronics

Latvia . 6,824 parts In-Stock

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Kulean Microsystems

USA . 6,338 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,069 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Alle Elektronik GmbH

Germany . 4,046 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,955 parts In-Stock

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Supply Digital

USA . 1,863 parts In-Stock

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Northwest PG Solutions

USA . 882 parts In-Stock

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$6.513

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UHIMA Technologies

Türkiye . 534 parts In-Stock

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SupplyDigital Components

Austria . 426 parts In-Stock

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Overview

Enhance your motor control systems with the FGP15N60UNDF by Onsemi! This top-notch N-CHANNEL IGBT transistor, featuring a single configuration with a built-in diode, offers unparalleled quality and reliability. With a maximum collector-emitter voltage of 600V and a maximum power dissipation of 178W, this device is perfect for various applications in the field. Trust Onsemi's expertise and take advantage of the high performance and efficiency that the FGP15N60UNDF provides. Elevate your projects with this superior component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and thermal insulation, ensuring the IGBT is protected from external elements and can operate efficiently.

Polarity or Channel Type: N-CHANNEL

Offers good conductivity and control for motor control applications, allowing for precise operation.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space due to the integrated diode, enhancing the overall efficiency of the system.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring reliable and precise performance in controlling motors.

Maximum Fall Time (tf): 12.8 ns

Fast fall time allows for quick switching operations, improving the overall efficiency of the IGBT.

Nominal Turn Off Time (toff): 69.8 ns

Quick turn off time reduces switching losses and heat buildup, contributing to energy efficiency.

No. of Terminals: 3

Simplified terminal configuration makes installation and connection easier, enhancing usability.

Maximum Power Dissipation (Abs): 178 W

High power dissipation capability allows the IGBT to handle heavy loads and high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design enables secure and stable mounting, ensuring reliability in challenging environments.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without compromising performance, making it versatile for various applications.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating ensures robustness and reliability in high-voltage applications, offering protection against voltage spikes.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity, ensuring efficient heat dissipation and long-term reliability.

Maximum Gate-Emitter Voltage: 20 V

Sufficient gate-emitter voltage rating for reliable and stable operation, preventing voltage breakdown and ensuring longevity.

Maximum Collector Current (IC): 30 A

High collector current rating allows the IGBT to handle heavy current loads without overheating, ensuring reliable operation.

Maximum Gate-Emitter Threshold Voltage: 8.5 V

Optimal gate-emitter threshold voltage for precise and controlled switching, improving overall performance.

Terminal Finish: MATTE TIN

Matte tin finish enhances connectivity and reliability, promoting stable and secure terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, reducing the chances of errors and ensuring ease of use.

Nominal Turn On Time (ton): 18.8 ns

Fast turn on time allows for quick and efficient switching operations, contributing to the overall performance of the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGP15N60UNDF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

12.8 ns

Maximum Gate-Emitter Threshold Voltage:

8.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

69.8 ns

Nominal Turn On Time (ton):

18.8 ns

Trade Compliance

FGP15N60UNDF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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