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IKW25N120H3XK

Infineon Technologies

IKW25N120H3XK by Infineon Technologies

IKW25N120H3XK by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 50A. It has a turn-off time of 397ns and turn-on time of 61ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.

Median Price

$6.940

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 257 parts In-Stock

1+ parts

$6.940

100+ parts

$3.340

1k+ parts

$2.970

10k+ parts

$2.640

257

$6.940

$3.340

$2.970

$2.640

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 28 parts In-Stock

1+ parts

$4.690

100+ parts

-

1k+ parts

-

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28

$4.690

-

-

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Digiode

USA . 343 parts In-Stock

1+ parts

$6.175

100+ parts

-

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-

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343

$6.175

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Vyrian

USA . 219 parts In-Stock

1+ parts

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219

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 22,409 parts In-Stock

1+ parts

$0.352

100+ parts

$0.338

1k+ parts

$0.324

10k+ parts

-

22,409

$0.352

$0.338

$0.324

-

Corohmni

South Africa . 80 parts In-Stock

1+ parts

$0.544

100+ parts

-

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80

$0.544

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Aztec Data Supply Inc.

USA . 4,320 parts In-Stock

1+ parts

$1.070

100+ parts

-

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-

4,320

$1.070

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$4.690

100+ parts

-

1k+ parts

$4.455

10k+ parts

$4.362

2,000

$4.690

-

$4.455

$4.362

Continental Prestige Electronics

USA . 40 parts In-Stock

1+ parts

$4.690

100+ parts

-

1k+ parts

-

10k+ parts

$4.596

40

$4.690

-

-

$4.596

Ampacity Inc.

Singapore . 342 parts In-Stock

1+ parts

$4.980

100+ parts

-

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342

$4.980

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Semicontronic

India . 342 parts In-Stock

1+ parts

$4.980

100+ parts

$4.856

1k+ parts

$4.831

10k+ parts

-

342

$4.980

$4.856

$4.831

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Corphita

USA . 996 parts In-Stock

1+ parts

$5.850

100+ parts

-

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996

$5.850

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AZTECH Wire

Italy . 841 parts In-Stock

1+ parts

$6.626

100+ parts

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1k+ parts

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841

$6.626

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Argo Parts USA

USA . 4,556 parts In-Stock

1+ parts

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4,556

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Overview

Discover the power and efficiency of the IKW25N120H3XK from Infineon Technologies, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) is designed for power control applications, offering unmatched performance and reliability. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of 397ns, this N-channel transistor with built-in diode is a game-changer in the field. Whether you're looking to optimize power systems or improve energy efficiency, the IKW25N120H3XK delivers exceptional value and performance that will exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material helps in providing good thermal and mechanical properties, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have better conductivity, which results in lower power losses and higher efficiency in power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and implementation, saving space and simplifying the overall system.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT is suitable for controlling high power levels efficiently.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and placement within a circuit or system.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection, ensuring stable performance under high current conditions.

Nominal Turn Off Time (toff): 397 ns

The relatively fast turn off time helps in reducing switching losses and improving overall efficiency of power control.

No. of Terminals: 3

Having 3 terminals provides flexibility in connection options and allows for easy integration into various circuit designs.

Package Style (Meter): FLANGE MOUNT

The flange mount package style ensures secure and stable mounting, suitable for high-power applications that require efficient heat dissipation.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature allows for reliable performance in elevated temperature environments without compromising on efficiency.

Maximum Collector-Emitter Voltage: 1200 V

The high collector-emitter voltage rating makes this IGBT suitable for high voltage applications, ensuring durability and reliability under high voltage conditions.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high conductivity and reliability, ensuring stable performance over time.

Maximum Collector Current (IC): 50 A

With a high collector current rating, this IGBT is suitable for applications requiring high power handling capacity, ensuring stable and efficient operation.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and ensures proper connection within a circuit or system.

Nominal Turn On Time (ton): 61 ns

The fast turn on time helps in reducing delays in switching operations, improving the overall efficiency and performance of power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKW25N120H3XK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

397 ns

Nominal Turn On Time (ton):

61 ns

Trade Compliance

IKW25N120H3XK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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