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IRG4BC20UD-STRR

International Rectifier

IRG4BC20UD-STRR by International Rectifier

IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.

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Overview

Unlock the power of cutting-edge technology with the IRG4BC20UD-STRR by International Rectifier. This Insulated Gate Bipolar Transistor (IGBT) offers unparalleled performance and reliability, making it ideal for power control applications. With a maximum collector-emitter voltage of 600V and a peak operating temperature of 150°C, this transistor is built to handle even the most demanding tasks. Say goodbye to inefficiency and hello to seamless power management with the IRG4BC20UD-STRR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the components inside, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities, especially in applications requiring high current handling.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor package.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring reliable performance in managing high-power systems.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, improving overall reliability and performance.

Package Shape: RECTANGULAR

Provides a compact form factor, making it suitable for applications with limited space.

Terminal Form: GULL WING

Facilitates easy soldering and connection, enhancing the overall efficiency of the installation process.

Maximum Fall Time (tf): 170 ns

Offers fast switching speed, ensuring quick response times in power control applications.

Nominal Turn Off Time (toff): 320 ns

Provides precise timing control, allowing for accurate switching operations in power management systems.

No. of Terminals: 2

Simplifies circuit integration and reduces complexity, making it easier to incorporate into existing designs.

Maximum Power Dissipation (Abs): 60 W

Offers high power handling capabilities, making it suitable for demanding applications with heavy loads.

Package Style (Meter): SMALL OUTLINE

Features a compact design, ideal for applications where space is limited.

Maximum Operating Temperature: 150 °C

Ensures stable performance even in high-temperature environments, increasing the product's reliability.

Maximum Collector-Emitter Voltage: 600 V

Provides high voltage tolerance, making it suitable for applications requiring voltage isolation.

Transistor Element Material: SILICON

Offers high performance and reliability, ensuring long-term functionality in various operating conditions.

Maximum Gate-Emitter Voltage: 20 V

Ensures safe operation and protection against overvoltage conditions, enhancing overall system reliability.

Maximum Collector Current (IC): 13 A

Supports high current handling capabilities, making it suitable for power control applications with heavy loads.

Maximum Gate-Emitter Threshold Voltage: 6 V

Allows for precise control and modulation of the transistor, ensuring accurate power management.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability and reliability, ensuring secure and durable connections in the circuit.

Terminal Position: SINGLE

Simplifies installation and connection, making it easier to integrate into existing circuit designs.

Case Connection: COLLECTOR

Facilitates easy and efficient connection to external components, improving overall system performance.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering and connection quality during the manufacturing process, increasing product durability.

Peak Reflow Temperature °C: 225

Supports high-temperature soldering processes, ensuring robust and durable connections in the circuit.

Nominal Turn On Time (ton): 55 ns

Provides fast switching speed, allowing for quick response times and precise control in power management applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC20UD-STRR attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

170 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

225

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

320 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

IRG4BC20UD-STRR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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