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FGA30T65SHD

Onsemi

FGA30T65SHD by Onsemi

FGA30T65SHD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and IC of 60A, ideal for power control applications. It has a turn-off time of 67.2ns, operating temperature range from -55 to 175 °C, and a collector-emitter voltage of 650V. The package style is flange mount with matte tin terminal finish in a rectangular shape.

Median Price

$2.722

Lifecycle Status

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14

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1k+

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Arrow

USA . 440 parts In-Stock

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$1.153

100+ parts

$1.072

1k+ parts

$1.014

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440

$1.153

$1.072

$1.014

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Chip1Stop

Japan . 167 parts In-Stock

1+ parts

$2.930

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167

$2.930

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Farnell

UK . 746 parts In-Stock

1+ parts

$3.160

100+ parts

$1.580

1k+ parts

$1.550

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746

$3.160

$1.580

$1.550

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Mouser Electronics

USA . 441 parts In-Stock

1+ parts

$4.620

100+ parts

$3.530

1k+ parts

$2.980

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441

$4.620

$3.530

$2.980

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Element14

Singapore . 752 parts In-Stock

1+ parts

$4.873

100+ parts

$3.140

1k+ parts

$3.015

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752

$4.873

$3.140

$3.015

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Rochester

USA . 27,034 parts In-Stock

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$2.150

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$1.920

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$1.810

27,034

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$2.150

$1.920

$1.810

Verical

USA . 26,100 parts In-Stock

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$2.513

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$2.362

26,100

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$2.513

$2.362

DigiKey

USA . 434 parts In-Stock

1+ parts

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$1.160

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434

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$1.160

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Flip Electronics (Authorized)

USA . 434 parts In-Stock

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434

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Distributors (In-Stock)

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Digiode

USA . 2,736 parts In-Stock

1+ parts

$1.986

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-

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2,736

$1.986

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Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$2.430

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72

$2.430

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Flip Electronics

USA . 900 parts In-Stock

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900

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Classic Components Corporation

USA . 450 parts In-Stock

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450

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Vyrian

USA . 248 parts In-Stock

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248

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Semicontronic

India . 5,971 parts In-Stock

1+ parts

$0.990

100+ parts

$0.965

1k+ parts

$0.960

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5,971

$0.990

$0.965

$0.960

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Ampacity Inc.

Singapore . 137 parts In-Stock

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$0.990

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137

$0.990

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Component Stockers USA

USA . 451 parts In-Stock

1+ parts

$1.090

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$1.090

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451

$1.090

$1.090

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Corohmni

South Africa . 361 parts In-Stock

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$1.160

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361

$1.160

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Corphita

USA . 1,628 parts In-Stock

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$1.882

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1,628

$1.882

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Argo Parts USA

USA . 1,747 parts In-Stock

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$2.430

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$2.430

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Netroflash

USA . 1,000 parts In-Stock

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$2.430

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$2.309

10k+ parts

$2.260

1,000

$2.430

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$2.309

$2.260

Continental Prestige Electronics

USA . 757 parts In-Stock

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$4.450

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$2.520

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757

$4.450

$2.520

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Microchip USA

USA . 388 parts In-Stock

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$31.460

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$31.460

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Perfect Parts

USA . 93,061 parts In-Stock

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Kepictronics

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GreenTree Electronics

Israel . 8,470 parts In-Stock

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SupplyDigital Components

Austria . 7,059 parts In-Stock

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TANS Electronics

Latvia . 6,567 parts In-Stock

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Problanco Electronics

Mexico . 5,130 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 2,777 parts In-Stock

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Supply Digital

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Overview

Unleash the power of innovation with the FGA30T65SHD by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in every product they offer. The FGA30T65SHD falls under the category of Insulated Gate Bipolar Transistors (IGBT) and is designed for power control applications. With its single configuration and built-in diode, this transistor provides unmatched efficiency and performance. Experience seamless power management with a maximum VCEsat of 2.1V and a maximum collector current of 60A. Trust Onsemi to deliver cutting-edge technology that exceeds all expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and heat dissipation, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and better performance in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by incorporating a diode within the transistor.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance.

Maximum VCEsat: 2.1 V

Low VCEsat minimizes power loss and improves efficiency in power control systems.

Package Shape: RECTANGULAR

Facilitates easy mounting and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Enables secure connections and easy assembly in electronic circuits.

Nominal Turn Off Time (toff): 67.2 ns

Fast turn-off time enhances the performance and response time of the transistor in power control applications.

No. of Terminals: 3

Simplified 3-terminal design for easy installation and connection in circuits.

Maximum Power Dissipation (Abs): 238 W

High power dissipation capability allows for handling large amounts of power safely.

Package Style (Meter): FLANGE MOUNT

Flange mount design ensures easy and secure installation in electronic systems.

Maximum Operating Temperature: 175 °C

Wide operating temperature range enables reliable performance in various environments.

Maximum Collector-Emitter Voltage: 650 V

High VCE allows for operation in high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability in power control applications.

Maximum Turn On Time (ton): 33.4 ns

Fast turn-on time enhances the response time and efficiency of the transistor.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage tolerance ensures safe and reliable operation in power control circuits.

Minimum Operating Temperature: -55 °C

Can operate at low temperatures, making it suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 60 A

High collector current rating allows for handling large currents in power control applications.

Maximum Gate-Emitter Threshold Voltage: 7.5 V

Low gate-emitter threshold voltage ensures efficient and reliable switching in power control circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Single terminal position for easy installation and connection in electronic circuits.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGA30T65SHD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

67.2 ns

Maximum Turn On Time (ton):

33.4 ns

Maximum VCEsat:

2.1 V

Trade Compliance

FGA30T65SHD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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