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FGA30N65SMD

Onsemi

FGA30N65SMD by Onsemi

FGA30N65SMD by Onsemi is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 60A max collector current, and 125ns nominal turn off time. Ideal for power control applications, it has a max power dissipation of 300W and operates up to 175°C.

Median Price

$2.025

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 295 parts In-Stock

1+ parts

$3.740

100+ parts

$2.540

1k+ parts

$1.930

10k+ parts

$1.770

295

$3.740

$2.540

$1.930

$1.770

Rochester

USA . 8,402 parts In-Stock

1+ parts

-

100+ parts

$1.810

1k+ parts

$1.620

10k+ parts

$1.530

8,402

-

$1.810

$1.620

$1.530

DigiKey

USA . 8,402 parts In-Stock

1+ parts

-

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-

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$2.390

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-

8,402

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$2.390

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Farnell

UK . 8,402 parts In-Stock

1+ parts

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$1.841

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8,402

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$1.841

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Verical

USA . 8,100 parts In-Stock

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$2.025

10k+ parts

$1.913

8,100

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$2.025

$1.913

Flip Electronics (Authorized)

USA . 1,350 parts In-Stock

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1,350

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Distributors (In-Stock)

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Vyrian

USA . 823 parts In-Stock

1+ parts

$1.841

100+ parts

-

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823

$1.841

-

-

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Digiode

USA . 1,890 parts In-Stock

1+ parts

$1.928

100+ parts

-

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1,890

$1.928

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Flip Electronics

USA . 1,350 parts In-Stock

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1,350

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DigiKey Marketplace

USA . 1,350 parts In-Stock

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1,350

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ACDS - Activité Composants Distribution Service

France . 142 parts In-Stock

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Bristol Electronics

USA . 142 parts In-Stock

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$1.673

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142

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$1.673

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Dan-Mar Components

USA . 142 parts In-Stock

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142

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ComSIT Distribution GmbH

Germany . 26 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,217 parts In-Stock

1+ parts

$1.560

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5,217

$1.560

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Corphita

USA . 1,016 parts In-Stock

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$1.827

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1,016

$1.827

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Corohmni

South Africa . 60 parts In-Stock

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$1.841

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60

$1.841

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Microchip USA

USA . 4,400 parts In-Stock

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$12.740

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4,400

$12.740

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Native Components

USA . 73 parts In-Stock

1+ parts

$43.676

100+ parts

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$41.929

73

$43.676

-

-

$41.929

Northwest PG Solutions

USA . 394 parts In-Stock

1+ parts

$48.043

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394

$48.043

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Continental Prestige Electronics

USA . 8,402 parts In-Stock

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$1.420

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8,402

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$1.420

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Problanco Electronics

Mexico . 6,000 parts In-Stock

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SupplyDigital Components

Austria . 4,882 parts In-Stock

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Kulean Microsystems

USA . 4,116 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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TANS Electronics

Latvia . 2,080 parts In-Stock

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Perfect Parts

USA . 1,747 parts In-Stock

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Supply Digital

USA . 1,383 parts In-Stock

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UHIMA Technologies

Türkiye . 144 parts In-Stock

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Overview

Enhance your power control applications with the FGA30N65SMD Insulated Gate Bipolar Transistor from Onsemi. With a maximum collector-emitter voltage of 650V and a nominal turn off time of 125ns, this N-CHANNEL transistor offers reliable performance and efficient power dissipation up to 300W. Its single configuration with built-in diode ensures seamless operation, while its high-quality construction and matte tin terminal finish guarantee durability. Trust Onsemi's expertise in semiconductor manufacturing to deliver superior products like the FGA30N65SMD that provide value, benefits, and advantages to customers in need of robust power control solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the components inside, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL type allows for efficient power control and better performance in various applications.

Nominal Turn Off Time (toff): 125 ns

Fast turn off time allows for precise control and efficient operation of the transistor.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability ensures the transistor can handle heavy loads without overheating.

Maximum Collector-Emitter Voltage: 650 V

High voltage rating allows the transistor to be used in a wide range of applications without risk of damage.

Maximum Gate-Emitter Voltage: 20 V

Operating within this voltage range ensures optimal performance and reliability of the transistor.

Maximum Collector Current (IC): 60 A

High collector current rating enables the transistor to handle larger currents, making it suitable for high power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGA30N65SMD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

125 ns

Nominal Turn On Time (ton):

41 ns

Trade Compliance

FGA30N65SMD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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