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FGA30N60LSDTU

Onsemi

FGA30N60LSDTU by Onsemi

FGA30N60LSDTU by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 60A max collector current. It has a built-in diode, 2870ns nominal turn-off time, and 480W max power dissipation. Ideal for power control applications requiring high voltage and current handling capabilities.

Median Price

$2.510

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2 parts In-Stock

1+ parts

$1.309

100+ parts

$1.151

1k+ parts

$1.075

10k+ parts

$1.065

2

$1.309

$1.151

$1.075

$1.065

Chip1Stop

Japan . 2 parts In-Stock

1+ parts

$1.309

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-

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2

$1.309

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Flip Electronics (Authorized)

USA . 868 parts In-Stock

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868

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Rochester

USA . 551 parts In-Stock

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$2.510

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$2.240

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$2.110

551

-

$2.510

$2.240

$2.110

DigiKey

USA . 551 parts In-Stock

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$3.300

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551

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$3.300

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Verical

USA . 350 parts In-Stock

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$2.800

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$2.638

350

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$2.800

$2.638

Distributors (In-Stock)

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Digiode

USA . 2,146 parts In-Stock

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$1.244

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$1.244

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Vyrian

USA . 1,379 parts In-Stock

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$1.309

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1,379

$1.309

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Flip Electronics

USA . 868 parts In-Stock

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868

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ComSIT Distribution GmbH

Germany . 450 parts In-Stock

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450

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Bristol Electronics

USA . 240 parts In-Stock

1+ parts

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$2.300

1k+ parts

$2.021

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240

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$2.300

$2.021

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LIBRA Elektronik GmbH

Germany . 240 parts In-Stock

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240

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Dan-Mar Components

USA . 240 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 196 parts In-Stock

1+ parts

$1.110

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$1.110

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Corphita

USA . 2,675 parts In-Stock

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$1.178

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$1.178

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Component Stockers USA

USA . 770 parts In-Stock

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$1.260

100+ parts

$2.660

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770

$1.260

$2.660

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Corohmni

South Africa . 64 parts In-Stock

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$1.309

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64

$1.309

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Microchip USA

USA . 2,678 parts In-Stock

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$14.196

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$14.196

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Native Components

USA . 278 parts In-Stock

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$136.040

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$130.598

278

$136.040

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$130.598

Northwest PG Solutions

USA . 428 parts In-Stock

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$149.644

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428

$149.644

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QUARKTWIN TECHNOLOGY LTD

USA . 18,732 parts In-Stock

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SupplyDigital Components

Austria . 7,676 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,080 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Problanco Electronics

Mexico . 6,096 parts In-Stock

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Kulean Microsystems

USA . 4,823 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,720 parts In-Stock

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TANS Electronics

Latvia . 4,455 parts In-Stock

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Supply Digital

USA . 1,179 parts In-Stock

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Perfect Parts

USA . 897 parts In-Stock

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Continental Prestige Electronics

USA . 551 parts In-Stock

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$3.350

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UHIMA Technologies

Türkiye . 225 parts In-Stock

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225

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Overview

Enhance power control with the FGA30N60LSDTU IGBT by Onsemi. Crafted with precision and reliability in mind, this N-channel transistor offers unparalleled performance in various applications. With a single configuration and built-in diode, this IGBT is a game-changer for power control needs. The package's flange mount design ensures easy installation while the maximum power dissipation of 480W guarantees durability. Trust Onsemi to deliver quality products that exceed expectations, making the FGA30N60LSDTU the ideal choice for your power control requirements.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IGBT, ensuring long-term reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by integrating a diode, reducing the number of external components needed.

Maximum Power Dissipation (Abs): 480 W

Capable of handling high power levels, making it suitable for demanding power control applications.

Maximum Collector-Emitter Voltage: 600 V

Allows for high voltage operation, expanding the range of potential applications for this IGBT.

Nominal Turn On Time (ton): 62 ns

Offers fast turn on time, improving the overall efficiency of power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGA30N60LSDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

2000 ns

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

2870 ns

Nominal Turn On Time (ton):

62 ns

Trade Compliance

FGA30N60LSDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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