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FGA30S120P

Onsemi

FGA30S120P by Onsemi

FGA30S120P by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1300V and a max power dissipation of 500W. It is designed for power control applications, featuring a single configuration with built-in diode. With a max operating temperature of 175°C, it offers fast rise and fall times for efficient switching performance.

Median Price

$6.085

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 81 parts In-Stock

1+ parts

$5.820

100+ parts

$3.990

1k+ parts

-

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81

$5.820

$3.990

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Mouser Electronics

USA . 419 parts In-Stock

1+ parts

$6.350

100+ parts

$4.530

1k+ parts

$3.770

10k+ parts

-

419

$6.350

$4.530

$3.770

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Element14

Singapore . 81 parts In-Stock

1+ parts

$12.100

100+ parts

$7.230

1k+ parts

$5.690

10k+ parts

-

81

$12.100

$7.230

$5.690

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Rochester

USA . 600 parts In-Stock

1+ parts

-

100+ parts

$3.460

1k+ parts

$3.090

10k+ parts

$2.910

600

-

$3.460

$3.090

$2.910

Flip Electronics (Authorized)

USA . 28 parts In-Stock

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-

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28

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Digiode

USA . 2,459 parts In-Stock

1+ parts

$3.658

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-

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2,459

$3.658

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Vyrian

USA . 1,308 parts In-Stock

1+ parts

$3.850

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1,308

$3.850

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Bristol Electronics

USA . 420 parts In-Stock

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420

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Dan-Mar Components

USA . 420 parts In-Stock

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420

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Flip Electronics

USA . 28 parts In-Stock

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28

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Distributors (Availability)

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Corphita

USA . 840 parts In-Stock

1+ parts

$3.465

100+ parts

-

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840

$3.465

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Corohmni

South Africa . 257 parts In-Stock

1+ parts

$3.850

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-

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257

$3.850

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Lixinc

USA . 14,696 parts In-Stock

1+ parts

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14,696

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Kulean Microsystems

USA . 6,513 parts In-Stock

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6,513

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RC Electronics

USA . 5,503 parts In-Stock

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5,503

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SupplyDigital Components

Austria . 4,605 parts In-Stock

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4,605

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Kepictronics

USA . 4,500 parts In-Stock

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Problanco Electronics

Mexico . 3,570 parts In-Stock

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3,570

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A-Z Elektronik GmbH

Germany . 2,060 parts In-Stock

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2,060

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Alle Elektronik GmbH

Germany . 1,373 parts In-Stock

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1,373

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Supply Digital

USA . 1,143 parts In-Stock

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1,143

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Northwest PG Solutions

USA . 1,136 parts In-Stock

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$3.812

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1,136

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$3.812

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 675 parts In-Stock

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675

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Native Components

USA . 587 parts In-Stock

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$3.773

10k+ parts

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587

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$3.773

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UHIMA Technologies

Türkiye . 477 parts In-Stock

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477

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TANS Electronics

Latvia . 461 parts In-Stock

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461

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Microchip USA

USA . 215 parts In-Stock

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215

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Overview

Discover the power and efficiency of the FGA30S120P by Onsemi, a top-quality Insulated Gate Bipolar Transistor designed for power control applications. With its N-channel configuration and built-in diode, this product offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, the FGA30S120P guarantees superior quality and durability. Whether you need to control power in industrial machinery or renewable energy systems, this IGBT is the perfect solution. Experience the value and benefits that this product brings to your projects, ensuring seamless operation and high performance. Upgrade your systems with the FGA30S120P and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the IGBT, ensuring reliable performance and longevity.

Maximum Collector-Emitter Voltage: 1300 V

High voltage handling capability allows this IGBT to be used in power control applications where high voltages are present.

Maximum Power Dissipation (Abs): 500 W

With a high power dissipation rating, this IGBT can handle large amounts of power without overheating, making it suitable for power control applications.

Maximum Collector Current (IC): 60 A

Capable of handling high current levels, making this IGBT ideal for power control applications that require high current handling.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without experiencing performance degradation, ensuring reliable operation in various environments.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGA30S120P attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1300 V

Maximum Fall Time (tf):

350 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

490 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Trade Compliance

FGA30S120P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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