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FGA30N65SMD

Fairchild Semiconductor

FGA30N65SMD by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6 V;

Median Price

$2.025

Lifecycle Status

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Mouser Electronics

USA . 295 parts In-Stock

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$3.740

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$2.540

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$1.930

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$1.770

295

$3.740

$2.540

$1.930

$1.770

Rochester

USA . 8,402 parts In-Stock

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$1.810

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$1.620

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$1.530

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DigiKey

USA . 8,402 parts In-Stock

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$2.390

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Farnell

UK . 8,402 parts In-Stock

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$1.841

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Verical

USA . 8,100 parts In-Stock

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$1.913

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Flip Electronics (Authorized)

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Vyrian

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$1.841

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Digiode

USA . 1,890 parts In-Stock

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$1.928

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DigiKey Marketplace

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Bristol Electronics

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Dan-Mar Components

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Corphita

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Corohmni

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Microchip USA

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Native Components

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$43.676

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$41.929

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Northwest PG Solutions

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$48.043

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGA30N65SMD attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

125 ns

Nominal Turn On Time (ton):

41 ns

Trade Compliance

FGA30N65SMD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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