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IXXH100N60B3

IXYS Corporation

IXXH100N60B3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 210 A; Nominal Turn On Time (ton): 92 ns;

Median Price

$10.800

Lifecycle Status

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7

In-Stock Inventory

< 1k

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Verical

USA . 1 parts In-Stock

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$6.465

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1

$6.465

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Chip1Stop

Japan . 1 parts In-Stock

1+ parts

$10.800

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$10.800

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Mouser Electronics

USA . 270 parts In-Stock

1+ parts

$12.950

100+ parts

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$7.390

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270

$12.950

-

$7.390

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DigiKey

USA . 88 parts In-Stock

1+ parts

$12.970

100+ parts

$7.844

1k+ parts

$6.461

10k+ parts

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88

$12.970

$7.844

$6.461

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Arrow

USA . 1 parts In-Stock

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$6.465

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Nova Conductors

Japan . 100 parts In-Stock

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$11.810

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Vyrian

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.640

100+ parts

$1.492

1k+ parts

$1.345

10k+ parts

-

2,000

$1.640

$1.492

$1.345

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Ampacity Inc.

Singapore . 12 parts In-Stock

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$8.460

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Continental Prestige Electronics

USA . 4,698 parts In-Stock

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$11.810

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$11.574

4,698

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$11.574

Component Stockers USA

USA . 412 parts In-Stock

1+ parts

$12.270

100+ parts

$11.160

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412

$12.270

$11.160

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AZTECH Wire

Italy . 252 parts In-Stock

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$14.948

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252

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Microchip USA

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$45.528

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2,722

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Argo Parts USA

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

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110

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$11.574

1k+ parts

$11.220

10k+ parts

$10.983

100

-

$11.574

$11.220

$10.983

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXH100N60B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

350 ns

Nominal Turn On Time (ton):

92 ns

Trade Compliance

IXXH100N60B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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