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IXXH75N60C3D1

Littelfuse

IXXH75N60C3D1 by Littelfuse

IXXH75N60C3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCEsat, 150A IC, and 750W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and a fast turn-off time of 185ns.

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Overview

Elevate your power control applications with the IXXH75N60C3D1 by Littelfuse. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor offers unparalleled performance and reliability. With a maximum VCEsat of 2.3V and maximum collector current of 150A, this N-channel transistor provides exceptional power dissipation of 750W. Whether you're looking to enhance efficiency or optimize power management, the IXXH75N60C3D1 is the ideal solution for your needs. Trust in Littelfuse for superior quality and innovation that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protection for the transistor, making it durable and long-lasting.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve efficiency in power control applications.

Maximum VCEsat: 2.3 V

Low VCEsat helps in reducing power dissipation and improving overall efficiency of the transistor.

Maximum Power Dissipation: 750 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 600 V

High maximum collector-emitter voltage rating makes this transistor suitable for high voltage applications.

Maximum Collector Current (IC): 150 A

High collector current rating allows the transistor to handle high currents, making it suitable for power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXH75N60C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

185 ns

Nominal Turn On Time (ton):

105 ns

Maximum VCEsat:

2.3 V

Trade Compliance

IXXH75N60C3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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