Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Body Material: PLASTIC/EPOXY;
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Insulated Gate Bipolar Transistors (IGBT) IXXH75N60C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation
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IXXH75N60C3D1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.
BSS138-7-F
Diodes Incorporated
Diodes Inc. BSS138-7-F is a N-channel FET with 50V DS breakdown voltage, 0.2A max drain current, and 3.5 ohm RDS(on). Ideal for switching applications in small outline packages with matte tin finish, operating up to 150°C peak reflow temp.
2N7002
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
LM555CN
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
1N4148WT
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Onsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
LL4148
Panjit International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Surge Components
Ksl Microdevices
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
BAV99
Vishay Sprague
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Daco Semiconductor
FDN306P
FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.
1N4148
Texas Instruments
1N4148 by Texas Instruments is a rectifier diode with max reverse recovery time of 0.004 us and max forward voltage of 1V. Ideal for applications requiring low reverse current such as signal demodulation circuits. Operates at max temp of 200°C, making it suitable for high-temperature environments.
SMBJ18CA
Sensitron Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Gec Plessey Semiconductors
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A;
ABS25-32.768KHZ-T
Abracon
Abracon's ABS25-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 122% stability, and 50000 ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing systems in industrial settings.
NGTG15N60S1EG
NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.
BSM75GB120DN2
Infineon Technologies
BSM75GB120DN2 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 3.2V and a max collector current (IC) of 75A. It is commonly used for power control applications due to its high power dissipation of 625W and max operating temperature of 150°C.
APT60GA60JD60
Microchip Technology
APT60GA60JD60 by Microchip Technology is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 112A. It has a nominal turn off time of 333ns and nominal turn on time of 82ns, making it ideal for power control applications requiring fast switching capabilities. The transistor is UL RECOGNIZED and comes in a FLANGE MOUNT package style suitable for high temperature environments up to 150°C.
APT50GP60J
APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
IRG7PH42UD1MPBF
International Rectifier
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Maximum Collector Current (IC): 85 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 150 Cel;
FS820R08A6P2BBPSA1
Infineon's FS820R08A6P2BBPSA1 is an N-CHANNEL IGBT with 3 BANKS, SERIES CONNECTED, CENTER TAP configuration. It has 6 elements, 820 A IC, and 714 W power dissipation for POWER CONTROL applications. With VCEsat of 1.35V and toff of 1110ns, it operates b/w -40 to 150 °C effectively.
IRG7PH50K10DPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 90 A; Maximum Fall Time (tf): 110 ns; Maximum Gate-Emitter Threshold Voltage: 7.5 V;
STGY50NC60WD
STMicroelectronics
STGY50NC60WD by STMicroelectronics is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It is used for power control applications, with a nominal turn off time of 271ns and a max power dissipation of 260W.
IXXX100N60B3H1
Littelfuse
IXXX100N60B3H1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a collector current of 200A. Ideal for power control applications, it has a built-in diode, operates at temperatures up to 150°C, and features a turn-off time of 350ns.
IXXX300N60C3
IXYS Corporation
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 2300 W; Maximum Collector Current (IC): 510 A; Terminal Finish: Matte Tin (Sn); Maximum Gate-Emitter Threshold Voltage: 5.5 V;
FP20R06W1E3BOMA1
FP20R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, designed for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 600V, Nominal Turn Off Time of 250ns, and Max Collector Current of 27A. This COMPLEX transistor has a rectangular package style and operates at temperatures up to 175°C.
IXXX110N65B4H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 250 A; Nominal Turn On Time (ton): 65 ns;
FGH40N60SFDTU_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; No. of Elements: 1;
IKW30N60DTPXKSA1
IKW30N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 1.8V, IC of 53A, and Pmax of 200W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 279ns and high operating temperature range (-40 to 175°C).
2MBI200UD-120
Fuji Electric
Fuji Electric's 2MBI200UD-120 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V, max current of 300A, and turn off time of 370ns. Ideal for power control applications due to its fast switching capabilities and high voltage handling.
SGS10N60RUFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 284 ns;
FF450R12KE4EHOSA1
FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.
STGD5NB120SZT4
STGD5NB120SZT4 by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 10A max collector current, and 55W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and resistor. It comes in a small outline package shape suitable for surface mount assembly.
FGL60N100BNTD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IRG4PC50FPBF
IRG4PC50FPBF by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 70A max collector current. It has a 190ns max fall time, making it suitable for high-power applications like motor drives and inverters. The package style is flange mount with through-hole terminals.
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IXXH30N60B3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
IXXH30N60B3D1 by Littelfuse is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 1.85V VCEsat. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, RECTANGULAR shape, and 292ns turn-off time.
IXXH75N60C3
IXXH75N60C3 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 600V. It is commonly used for power control applications due to its high power dissipation of 750W and fast nominal turn-off time of 185ns.
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Case Connection: COLLECTOR;
IXXH75N60C3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 150 A; Package Shape: RECTANGULAR;
IXXH50N60B3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; JESD-609 Code: e3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 120 A; Nominal Turn On Time (ton): 75 ns;
IXXH30N65B4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 65 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Time At Peak Reflow Temperature (s): 10;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Collector Current (IC): 70 A; JESD-609 Code: e3;
IXXH50N60C3D1
IXXH50N60C3D1 by Littelfuse is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector current (IC) of 100A. It is commonly used for power control applications due to its high power dissipation of 600W and fast nominal turn off time (toff) of 170ns.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 100 A; Maximum Time At Peak Reflow Temperature (s): 10;
IXXH100N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 220 A; JESD-30 Code: R-PSFM-T3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 210 A; Nominal Turn On Time (ton): 92 ns;
IXXH110N65C4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 234 A; Maximum Gate-Emitter Voltage: 20 V; Terminal Finish: MATTE TIN;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 880 W; Maximum Collector Current (IC): 235 A; Package Style (Meter): FLANGE MOUNT;
IXXH80N65B4H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 160 A; Maximum Time At Peak Reflow Temperature (s): 10;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 160 A; Terminal Position: SINGLE;
IXXH150N60C3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 300 A; Maximum Time At Peak Reflow Temperature (s): 10;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 300 A; Nominal Turn Off Time (toff): 230 ns;
IXXH75N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 750 W; Maximum Collector Current (IC): 160 A; Maximum Gate-Emitter Threshold Voltage: 5.5 V;
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