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APT30GP60BDQ1G

Microchip Technology

APT30GP60BDQ1G by Microchip Technology

Microchip Technology's APT30GP60BDQ1G is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 100A. It is designed for power control applications, offering a nominal turn-off time of 165ns and a nominal turn-on time of 31ns.

Median Price

$8.690

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 773 parts In-Stock

1+ parts

$8.690

100+ parts

$7.510

1k+ parts

$6.890

10k+ parts

$6.660

773

$8.690

$7.510

$6.890

$6.660

Mouser Electronics

USA . 460 parts In-Stock

1+ parts

$8.690

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$7.510

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460

$8.690

$7.510

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DigiKey

USA . 47 parts In-Stock

1+ parts

$8.690

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$7.063

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47

$8.690

$7.063

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Distributors (In-Stock)

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Nova Conductors

Japan . 750 parts In-Stock

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$7.580

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750

$7.580

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NAC Semi

USA . 618 parts In-Stock

1+ parts

$8.310

100+ parts

$7.530

1k+ parts

$6.890

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618

$8.310

$7.530

$6.890

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VNN

France . 422 parts In-Stock

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Chip Stock

USA . 166 parts In-Stock

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Vyrian

USA . 16 parts In-Stock

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R&J Components

USA . 8 parts In-Stock

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Distributors (Availability)

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Advanced Electronics

New Zealand . 69 parts In-Stock

1+ parts

$2.289

100+ parts

$2.266

1k+ parts

$2.175

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69

$2.289

$2.266

$2.175

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AZTECH Wire

Italy . 868 parts In-Stock

1+ parts

$5.346

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868

$5.346

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Ampacity Inc.

Singapore . 16 parts In-Stock

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$7.390

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16

$7.390

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Continental Prestige Electronics

USA . 847 parts In-Stock

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$7.580

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$7.428

847

$7.580

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$7.428

Netroflash

USA . 500 parts In-Stock

1+ parts

$7.580

100+ parts

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$7.201

10k+ parts

$7.049

500

$7.580

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$7.201

$7.049

QUARKTWIN TECHNOLOGY LTD

USA . 10,356 parts In-Stock

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Microchip USA

USA . 9,788 parts In-Stock

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West Coast Incorporated

USA . 7,314 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Argo Parts USA

USA . 1,837 parts In-Stock

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1,837

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iodParts Technologies Inc.

India . 1,515 parts In-Stock

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Perfect Parts

USA . 969 parts In-Stock

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969

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Overview

Discover the power and reliability of the APT30GP60BDQ1G by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers top-quality Insulated Gate Bipolar Transistors (IGBTs) that are built to last. With its N-CHANNEL configuration and built-in diode, this transistor is perfect for power control applications. The APT30GP60BDQ1G offers exceptional value with its quick turn off time, high maximum collector-emitter voltage, and impressive maximum collector current. Its through-hole terminal form and flange mount package style make it easy to install and use. Experience the advantages and benefits of the APT30GP60BDQ1G and take your projects to new heights of performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides high durability and insulation, making the product resistant to harsh environments and ensuring reliable performance.

Polarity or Channel Type: N-CHANNEL

The N-CHANNEL configuration allows for efficient current flow and low on-resistance, making the product suitable for high power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects the transistor from voltage spikes, enhancing the overall reliability and ease of use.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT can handle high current and voltage levels, providing precise control and efficient energy management.

Package Shape: RECTANGULAR

The rectangular package offers convenient mounting options and efficient use of space in electronic circuits, making it suitable for various designs and applications.

Terminal Form: THROUGH-HOLE

With a through-hole terminal form, the IGBT can be easily soldered onto printed circuit boards, ensuring secure connections and ease of installation.

No. of Elements: 1

Featuring a single element, this IGBT simplifies circuit designs and increases reliability by eliminating potential failure points.

Nominal Turn Off Time (toff): 165 ns

The low turn-off time allows for fast switching and reduces power dissipation, making the IGBT suitable for high-frequency applications that require quick response times.

No. of Terminals: 3

With three terminals, the IGBT enables precise control of its operation and simplifies circuit connections, enhancing overall performance and versatility.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides mechanical stability and easy mounting options, making the product suitable for applications where vibration and stress resistance are required.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand harsh operating conditions, ensuring reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

The high maximum voltage rating allows the IGBT to handle high voltage levels safely, making it suitable for applications that require robust voltage control.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material due to its excellent electrical properties, ensuring high performance and reliability in various applications.

Maximum Collector Current (IC): 100 A

The high collector current rating enables the IGBT to handle significant power levels, making it suitable for applications requiring high current switching.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish provides excellent conductivity and solderability, ensuring reliable electrical connections and ease of assembly.

Terminal Position: SINGLE

With a single terminal position, the product simplifies circuit design and ensures consistent and reliable electrical connections.

Case Connection: COLLECTOR

The case connection at the collector enhances thermal dissipation, allowing the IGBT to operate at high power levels while maintaining low temperatures.

Nominal Turn On Time (ton): 31 ns

The low turn-on time enables rapid switching, reducing power losses and improving efficiency, making the IGBT suitable for high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT30GP60BDQ1G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

165 ns

Nominal Turn On Time (ton):

31 ns

Trade Compliance

APT30GP60BDQ1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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