Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Microchip Technology's APT30GP60BDQ1G is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 100A. It is designed for power control applications, offering a nominal turn-off time of 165ns and a nominal turn-on time of 31ns.
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This material provides high durability and insulation, making the product resistant to harsh environments and ensuring reliable performance.
The N-CHANNEL configuration allows for efficient current flow and low on-resistance, making the product suitable for high power applications.
The built-in diode simplifies circuit design and protects the transistor from voltage spikes, enhancing the overall reliability and ease of use.
Designed specifically for power control applications, this IGBT can handle high current and voltage levels, providing precise control and efficient energy management.
The rectangular package offers convenient mounting options and efficient use of space in electronic circuits, making it suitable for various designs and applications.
With a through-hole terminal form, the IGBT can be easily soldered onto printed circuit boards, ensuring secure connections and ease of installation.
Featuring a single element, this IGBT simplifies circuit designs and increases reliability by eliminating potential failure points.
The low turn-off time allows for fast switching and reduces power dissipation, making the IGBT suitable for high-frequency applications that require quick response times.
With three terminals, the IGBT enables precise control of its operation and simplifies circuit connections, enhancing overall performance and versatility.
The flange mount style provides mechanical stability and easy mounting options, making the product suitable for applications where vibration and stress resistance are required.
With a high maximum operating temperature, this IGBT can withstand harsh operating conditions, ensuring reliable performance in demanding environments.
The high maximum voltage rating allows the IGBT to handle high voltage levels safely, making it suitable for applications that require robust voltage control.
Silicon is a widely used semiconductor material due to its excellent electrical properties, ensuring high performance and reliability in various applications.
The high collector current rating enables the IGBT to handle significant power levels, making it suitable for applications requiring high current switching.
The tin silver copper terminal finish provides excellent conductivity and solderability, ensuring reliable electrical connections and ease of assembly.
With a single terminal position, the product simplifies circuit design and ensures consistent and reliable electrical connections.
The case connection at the collector enhances thermal dissipation, allowing the IGBT to operate at high power levels while maintaining low temperatures.
The low turn-on time enables rapid switching, reducing power losses and improving efficiency, making the IGBT suitable for high-speed applications.
Insulated Gate Bipolar Transistors (IGBT) APT30GP60BDQ1G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Finish:
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Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
APT30GP60BDQ1G Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.
President and CEO
Ganesh Moorthy
Executive Chair
Steve Sanghi
CFO, Senior VP
J. Eric Bjornholt
Fab 5 - Colorado
Fabrication
Fab Initiation
1995
USA
Colorado Springs
Wafer Capacity
70,000
Santa Clara
1990
1,290
Lawrence
1989
5,000
Fab 4 - Gresham
1988
Gresham
50,000
Fab 2 - Tempe
1994
Tempe
30,000
Beverly
1985
2,000
Lowell
1986
15,000
Garden Grove
12,000
New Fab - Gresham
2024
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
EU2B-YS3203C
Idec
ROTARY SWITCH;
FDC5614P
Onsemi
FDC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 20A Max IDM and 0.105 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 150 °C. This SMALL OUTLINE transistor has a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
1N4148
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Changzhou Galaxy Century Microelectronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CM
Renesas Electronics
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Uniohm
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
LM7805CT
Fairchild Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %;
M39029/58-360
Molex
CONNECTOR ACCESSORY; Alternate Contact Sources: MILITARY; Removal Tool Sources: MILITARY; Material: COPPER ALLOY; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354;
LAN8720A-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
BSS138
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
Concord Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Polarity: BIDIRECTIONAL; Maximum Clamping Voltage: 29.2 V;
Wuxi Xuyang Electronic
SS14
Hy Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
USB3320C-EZK-TR
INTERFACE CIRCUIT; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 32; Package Code: HVQCCN; Package Shape: SQUARE;
Hitano Enterprise
Comchip Technology
C0603C104K5RACAUTO
KEMET Corporation
KEMET C0603C104K5RACAUTO is a ceramic capacitor with 0.1uF capacitance, rated for 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for automotive applications meeting AEC-Q200 standard, it comes in SMT package with matte tin finish and wraparound terminals.
IHW30N160R5XKSA1
Infineon Technologies
IHW30N160R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.15V and a max IC of 60A. It is designed for power control applications, featuring a built-in diode, 1600V max collector-emitter voltage, and 263W max power dissipation.
IGW50N60TPXKSA1
IGW50N60TPXKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and max current of 100A. It has a turn-off time of 396ns and turn-on time of 60ns, ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations at temperatures up to 175°C.
HGTG30N60C3D
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Collector Current (IC): 63 A; Transistor Element Material: SILICON;
IKD06N65ET6ARMA1
Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IRG4BC30KD-SPBF
IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
FS200R07N3E4RBOSA1
FS200R07N3E4RBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements, 650V max collector-emitter voltage, and 210ns turn on time. It is used for power control applications due to its complex configuration and flange mount package style.
BSM50GP120
BSM50GP120 by Infineon: N-CHANNEL IGBT with VCEsat of 2.55V, IC of 80A, and Pmax of 360W. Ideal for power electronics applications requiring high voltage (1200V) and current handling capabilities in complex configurations.
IXDH30N120D1
Littelfuse
IXDH30N120D1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 435W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 570ns.
IRG4PC50KPBF
IRG4PC50KPBF by Infineon Technologies is an N-CHANNEL IGBT transistor with 600V max. collector-emitter voltage, 52A max. collector current, and 200W max. power dissipation. Ideal for power control applications due to its fast turn-off time of 430ns and high operating temperature of 150°C.
IXYH50N120C3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Terminal Finish: MATTE TIN;
FF600R12KE4EBOSA1
FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.
HGTG11N120CND
Intersil
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Collector Current (IC): 43 A; Maximum Fall Time (tf): 400 ns;
IXDN75N120
IXDN75N120 by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 660W power dissipation. Ideal for motor control applications due to its fast ton of 150ns and low toff of 700ns. Recognized by UL, it features a flange mount package style for easy installation.
APT80GP60B2G
APT80GP60B2G by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 284ns and a turn-on time of 87ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with through-hole terminals, suitable for high-power electronic systems operating at temperatures up to 150°C.
IXGH10N170
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;
CM300DU-24NFH
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 300 A; Transistor Element Material: SILICON; Terminal Position: UPPER;
IXBX75N170
IXBX75N170 by Littelfuse is an N-CHANNEL IGBT with 1700V VCE, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. Features include 840ns turn-off time and -55 to 150 °C operating temperature range.
AIKW75N60CTXKSA1
AIKW75N60CTXKSA1 by Infineon Technologies is an N-Channel IGBT with a max VCEsat of 2V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 365ns and ton of 69ns. The transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for high-power industrial systems.
FP25R12W2T4P_B11ENG
Infineon's FP25R12W2T4P_B11ENG IGBT features 1200V VCEsat, 520ns toff, and 47ns ton. Ideal for high-power applications in industries like automotive, renewable energy, and industrial automation due to its N-Channel polarity and -40°C to 150°C operating temperature range.
IXGN100N170
IXGN100N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 160A max collector current, and 735W max power dissipation. Ideal for power control applications, it features a single configuration in a rectangular package style with UL recognition.
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APT35GT120JU2
Advanced Power Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Additional Features: LOW CONDUCTION LOSS; Case Connection: ISOLATED;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 55 A; Maximum Collector-Emitter Voltage: 1200 V;
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 260 W; Maximum Collector Current (IC): 55 A; Package Style (Meter): FLANGE MOUNT;
APT30GP60BDQ1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Elements: 1; Terminal Position: SINGLE;
APT30GS60BRDQ2(G)
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PSFM-T3;
APT30GS60BRDQ2G
APT30GS60BRDQ2G by Microchip is an N-CHANNEL IGBT with a 600V max collector-emitter voltage and 54A max collector current. It has a nominal turn-off time of 412ns and turn-on time of 45ns, making it ideal for motor control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
APT35GP120B2DQ2G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 96 A; Terminal Position: SINGLE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 543 W; Maximum Collector Current (IC): 96 A; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 96 A; Additional Features: LOW CONDUCTION LOSS; Qualification: Not Qualified;
APT30GP60B2DLG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 100 A; Terminal Finish: TIN SILVER COPPER;
APT30GP60B2DL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 100 A; Maximum Gate-Emitter Threshold Voltage: 6 V;
APT30GP60B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 462 W; Maximum Collector Current (IC): 100 A; Transistor Application: POWER CONTROL;
APT30GP60BD1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 462 W; Maximum Collector Current (IC): 49 A; Terminal Position: SINGLE;
APT30GP60BDF1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;
APT30GP60BDQ1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; No. of Terminals: 3; Transistor Application: POWER CONTROL;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 462 W; Maximum Collector Current (IC): 100 A; JESD-30 Code: R-PSFM-T3;
APT30GP60BG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 100 A; JEDEC-95 Code: TO-247AD;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 462 W; Maximum Collector Current (IC): 100 A; Package Style (Meter): FLANGE MOUNT;
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