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APT30GS60BRDQ2G

Microchip Technology

APT30GS60BRDQ2G by Microchip Technology

APT30GS60BRDQ2G by Microchip is an N-CHANNEL IGBT with a 600V max collector-emitter voltage and 54A max collector current. It has a nominal turn-off time of 412ns and turn-on time of 45ns, making it ideal for motor control applications. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$7.180

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 200 parts In-Stock

1+ parts

$7.180

100+ parts

$6.600

1k+ parts

$6.590

10k+ parts

$6.580

200

$7.180

$6.600

$6.590

$6.580

Distributors (In-Stock)

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Nova Conductors

Japan . 1,150 parts In-Stock

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$6.590

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$6.590

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Vyrian

USA . 5,131 parts In-Stock

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VNN

France . 1,102 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 1,567 parts In-Stock

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$5.535

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Ampacity Inc.

Singapore . 400 parts In-Stock

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$6.100

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$6.100

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Continental Prestige Electronics

USA . 3,701 parts In-Stock

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$6.590

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$6.458

3,701

$6.590

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$6.458

Netroflash

USA . 2,100 parts In-Stock

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$6.590

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$6.590

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Marpe Global Electronics

Taiwan . 7,908 parts In-Stock

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XL Components Corporation

Australia . 7,416 parts In-Stock

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QualityLine Systems

Poland . 5,744 parts In-Stock

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Microchip USA

USA . 3,456 parts In-Stock

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Argo Parts USA

USA . 1,813 parts In-Stock

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Perfect Parts

USA . 67 parts In-Stock

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Overview

Experience the superior performance and reliability of the APT30GS60BRDQ2G by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers high-quality Insulated Gate Bipolar Transistors (IGBT) that are ideal for motor control applications. With a single configuration and built-in diode, this transistor offers exceptional value and efficiency. Trust Microchip Technology to provide you with cutting-edge technology that meets your needs for power management and control. Upgrade your systems today with the APT30GS60BRDQ2G and experience the difference.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the internal components, making it suitable for harsh environments.

Polarity or Channel Type

N-CHANNEL - Offers efficient current conduction and low on-state voltage drop, enhancing performance.

Configuration

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and reduces component count, saving space and cost.

Transistor Application

MOTOR CONTROL - Specifically designed for motor control applications, ensuring reliable and precise operation.

Package Shape

RECTANGULAR - Allows for easy mounting and integration into existing circuit designs.

Terminal Form

THROUGH-HOLE - Facilitates easy and secure connections for stable performance.

Nominal Turn Off Time (toff)

412 ns - Provides fast switching speeds for improved efficiency and performance.

No. of Terminals

3 - Offers a simple and straightforward connection interface for ease of use.

Package Style (Meter)

FLANGE MOUNT - Enables easy installation and secure mounting in various applications.

Maximum Operating Temperature

150 °C - Can withstand high temperatures, making it suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage

600 V - Allows for high voltage operation, ensuring compatibility with various power systems.

Transistor Element Material

SILICON - Offers high reliability and performance, ensuring long-lasting operation.

Maximum Collector Current (IC)

54 A - Provides high current capabilities for demanding applications.

Terminal Finish

TIN SILVER COPPER - Ensures reliable and low-resistance connections for optimized performance.

Terminal Position

SINGLE - Simplifies installation and wiring, reducing the risk of errors.

Case Connection

COLLECTOR - Facilitates easy connection to the collector terminal, enhancing circuit design flexibility.

Nominal Turn On Time (ton)

45 ns - Enables quick turn-on speeds for efficient operation and reduced power losses.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT30GS60BRDQ2G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

412 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

APT30GS60BRDQ2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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