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APT30GS60BRDQ2(G)

Microsemi

APT30GS60BRDQ2(G) by Microsemi

Microsemi's APT30GS60BRDQ2(G) is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 54A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 412ns. Package style is flange mount with through-hole terminals.

Median Price

$7.180

Lifecycle Status

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4

In-Stock Inventory

1k+

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Mouser Electronics

USA . 200 parts In-Stock

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$7.180

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$6.600

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$6.590

10k+ parts

$6.580

200

$7.180

$6.600

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$6.580

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Nova Conductors

Japan . 1,150 parts In-Stock

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Vyrian

USA . 5,131 parts In-Stock

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AZTECH Wire

Italy . 1,567 parts In-Stock

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$5.535

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Ampacity Inc.

Singapore . 400 parts In-Stock

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$6.100

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Continental Prestige Electronics

USA . 3,701 parts In-Stock

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$6.590

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$6.458

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Netroflash

USA . 2,100 parts In-Stock

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$6.590

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Authorized Procurement Solutions

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Marpe Global Electronics

Taiwan . 7,908 parts In-Stock

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XL Components Corporation

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QualityLine Systems

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Overview

Elevate your motor control systems with the APT30GS60BRDQ2(G) by Microsemi. This high-quality Insulated Gate Bipolar Transistor (IGBT) with a built-in diode offers exceptional performance and reliability. Designed for N-CHANNEL applications, this transistor ensures efficient power management with a fast turn-off time of 412 ns. With a maximum collector current of 54 A and a collector-emitter voltage of 600 V, this product is ideal for various industrial applications. Trust Microsemi's expertise in semiconductor technology to bring you the best in power electronics. Experience the difference with the APT30GS60BRDQ2(G) today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the IGBT lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have better conductivity and are more efficient than P-channel IGBTs, making this product a good choice for motor control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies the circuit design and helps in reducing component count and board space, making it a cost-effective solution.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, this IGBT provides reliable performance and efficient power management.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various systems, enhancing the product's versatility.

Maximum Collector-Emitter Voltage: 600 V

With a high maximum collector-emitter voltage, this IGBT can handle high voltage applications reliably and efficiently.

Maximum Collector Current (IC): 54 A

The high maximum collector current rating of 54 A enables the IGBT to handle heavy loads and ensures reliable operation under high current conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT30GS60BRDQ2(G) attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

412 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

APT30GS60BRDQ2(G) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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