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Microsemi Insulated Gate Bipolar Transistors (IGBT) 2

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
APT30GS60BRDQ2(G) by Microsemi

APT30GS60BRDQ2(G)

Microsemi

Microsemi's APT30GS60BRDQ2(G) is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 54A max collector current. Ideal for motor control applications, it features a single configuration with built-in diode and a nominal turn-off time of 412ns. Package style is flange mount with through-hole terminals.

COLLECTOR

54 A

600 V

SINGLE WITH BUILT-IN DIODE

TO-247AD

R-PSFM-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

412 ns

45 ns

APTGF150H120G by Microsemi

APTGF150H120G

Microsemi

APTGF150H120G by Microsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. Ideal for motor control applications, it offers a max VCEsat of 3.7V and can handle up to 200A of collector current. With a max operating temperature of 150°C, this IGBT has a built-in diode and nominal turn-off time of 390ns.

ISOLATED

200 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X12

e1

1

4

12

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

961 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

390 ns

190 ns

3.7 V