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VS-GA200SA60UP

Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.

Median Price

$19.867

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 93 parts In-Stock

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$19.867

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Vyrian

USA . 5,359 parts In-Stock

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Euro-Tech

UK . 103 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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$0.844

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Aztec Data Supply Inc.

USA . 1,374 parts In-Stock

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$1.730

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Microchip USA

USA . 436 parts In-Stock

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$5.486

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AZTECH Wire

Italy . 799 parts In-Stock

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$9.591

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Semicontronic

India . 1,126 parts In-Stock

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$17.050

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$16.624

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$16.538

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Continental Prestige Electronics

USA . 1,615 parts In-Stock

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$19.663

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$19.270

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Ampacity Inc.

Singapore . 866 parts In-Stock

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$36.050

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Component Stockers USA

USA . 494 parts In-Stock

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$99.990

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Argo Parts USA

USA . 3,386 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$19.470

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$18.874

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$18.476

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Perfect Parts

USA . 78 parts In-Stock

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Overview

Enhance your power control applications with the Vishay Intertechnology VS-GA200SA60UP Insulated Gate Bipolar Transistor. Manufactured by a trusted industry leader, this N-CHANNEL transistor offers superior quality and reliability. With a maximum collector-emitter voltage of 600V and a maximum collector current of 200A, this product ensures efficient power management. Its quick turn on/off times and UL approval make it ideal for a wide range of industrial applications. Experience the benefits of high performance and durability with the VS-GA200SA60UP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this IGBT lightweight and durable, ideal for power control applications.

Polarity or Channel Type: N-CHANNEL

N-channel type enhances the switching speed and efficiency of the IGBT, making it suitable for high power applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and offers ease of installation, making this IGBT a convenient choice for power control systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT ensures reliable performance and efficient power regulation.

Package Shape: RECTANGULAR

The rectangular shape of the package enables easy mounting and heat dissipation, enhancing the overall performance of the IGBT.

Nominal Turn Off Time (toff): 620 ns

The low turn-off time of 620 ns ensures fast switching speeds, reducing power loss and enhancing the efficiency of the IGBT.

No. of Terminals: 4

With 4 terminals, this IGBT offers multiple connection options, giving flexibility in circuit design and integration.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting, ensuring long-term reliability in power control systems.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600 V ensures the IGBT can withstand high voltage levels, making it suitable for various power applications.

Transistor Element Material: SILICON

Made of silicon, this IGBT offers high reliability and efficiency, ensuring stable performance in power control applications.

Maximum Collector Current (IC): 200 A

With a maximum collector current of 200 A, this IGBT can handle high power loads, making it versatile for a wide range of power control tasks.

Terminal Position: UPPER

The upper terminal position simplifies the connection process and ensures easy access for wiring and maintenance.

Case Connection: ISOLATED

The isolated case connection enhances safety and reduces the risk of electrical interference, making this IGBT a reliable choice for power control applications.

Nominal Turn On Time (ton): 131 ns

The low turn-on time of 131 ns ensures quick activation, improving the overall efficiency and responsiveness of the IGBT.

Reference Standard: UL APPROVED

UL approval ensures that the IGBT meets stringent safety and quality standards, making it a trusted and reliable choice for power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-GA200SA60UP attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

620 ns

Nominal Turn On Time (ton):

131 ns

Trade Compliance

VS-GA200SA60UP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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