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F1225R12KT4GBOSA1

Infineon Technologies

F1225R12KT4GBOSA1 by Infineon Technologies

F1225R12KT4GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 12 elements, 1200V max collector-emitter voltage, and 55ns nominal turn on time. It is used for power control applications due to its complex configuration and UL recognized reference standard.

Median Price

$87.520

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 10 parts In-Stock

1+ parts

$72.390

100+ parts

-

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10

$72.390

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DigiKey

USA . 1 parts In-Stock

1+ parts

$85.430

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-

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1

$85.430

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Newark

USA . 7 parts In-Stock

1+ parts

$89.610

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7

$89.610

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Verical

USA . 10 parts In-Stock

1+ parts

$99.064

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10

$99.064

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Chip1Stop

Japan . 10 parts In-Stock

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$102.000

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10

$102.000

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Rochester

USA . 3 parts In-Stock

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$68.440

1k+ parts

$61.230

10k+ parts

$57.630

3

-

$68.440

$61.230

$57.630

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 351 parts In-Stock

1+ parts

$82.061

100+ parts

-

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351

$82.061

-

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$138.080

100+ parts

-

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550

$138.080

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Vyrian

USA . 7,078 parts In-Stock

1+ parts

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7,078

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DigiKey Marketplace

USA . 3 parts In-Stock

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3

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,401 parts In-Stock

1+ parts

$0.340

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-

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3,401

$0.340

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Modulus Dynamics

Lithuania . 20,960 parts In-Stock

1+ parts

$0.633

100+ parts

$0.608

1k+ parts

$0.582

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-

20,960

$0.633

$0.608

$0.582

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Corohmni

South Africa . 919 parts In-Stock

1+ parts

$0.876

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919

$0.876

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AZTECH Wire

Italy . 813 parts In-Stock

1+ parts

$15.185

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813

$15.185

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Ampacity Inc.

Singapore . 8 parts In-Stock

1+ parts

$73.420

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8

$73.420

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Corphita

USA . 355 parts In-Stock

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$77.742

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355

$77.742

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Component Stockers USA

USA . 16 parts In-Stock

1+ parts

$111.170

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16

$111.170

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Continental Prestige Electronics

USA . 3,706 parts In-Stock

1+ parts

$138.080

100+ parts

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$135.318

3,706

$138.080

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$135.318

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$138.080

100+ parts

-

1k+ parts

$131.176

10k+ parts

$128.414

2,000

$138.080

-

$131.176

$128.414

Semicontronic

India . 8 parts In-Stock

1+ parts

$159.800

100+ parts

$155.805

1k+ parts

$155.006

10k+ parts

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8

$159.800

$155.805

$155.006

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Microchip USA

USA . 8,679 parts In-Stock

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8,679

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Argo Parts USA

USA . 214 parts In-Stock

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214

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Overview

Unleash the power of innovation with the F1225R12KT4GBOSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers unparalleled quality and reliability in their products. The F1225R12KT4GBOSA1 is an Insulated Gate Bipolar Transistor (IGBT) that offers exceptional performance in power control applications. With a maximum collector-emitter voltage of 1200V and a fast nominal turn on time of 55ns, this transistor provides customers with the efficiency and precision they need to drive their projects forward. Trust Infineon Technologies to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This makes the IGBT suitable for applications requiring fast switching speeds and high efficiency.

Configuration:

COMPLEX - This configuration allows for advanced power control capabilities, making the IGBT versatile and adaptable to various industrial systems.

Transistor Application:

POWER CONTROL - Ideal for applications where precise control over power output is required, such as motor drives and power supplies.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy integration into existing circuit layouts, saving space and simplifying assembly.

No. of Elements:

12 - The high number of elements ensures efficient power distribution and load balancing, making the IGBT suitable for high-power applications.

Nominal Turn Off Time (toff):

470 ns - The fast turn-off time results in reduced power loss and heat generation, improving overall energy efficiency.

No. of Terminals:

38 - The large number of terminals provides increased connectivity options and flexibility in circuit design.

Package Style (Meter):

FLANGE MOUNT - The flange mount style allows for secure and stable mounting, ensuring reliable performance in rugged environments.

Maximum Collector-Emitter Voltage:

1200 V - The high voltage rating makes the IGBT suitable for high-power applications that require robust and reliable performance.

Transistor Element Material:

SILICON - Silicon is a common and reliable semiconductor material known for its high thermal conductivity and low power loss.

Terminal Position:

UPPER - The upper terminal position simplifies circuit layout and allows for easy access during installation and maintenance.

Case Connection:

ISOLATED - The isolated case connection provides enhanced safety and protection against electrical shocks, making the IGBT suitable for high-voltage applications.

Nominal Turn On Time (ton):

55 ns - The fast turn-on time enables quick and precise power control, making the IGBT ideal for applications that require rapid response times.

Reference Standard:

UL RECOGNIZED - The UL recognition ensures that the IGBT meets stringent safety and quality standards, providing peace of mind and confidence in its reliability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) F1225R12KT4GBOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X38

No. of Elements:

12

No. of Terminals:

38

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

470 ns

Nominal Turn On Time (ton):

55 ns

Trade Compliance

F1225R12KT4GBOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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