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AOTF15B65M2

Alpha & Omega Semiconductor

AOTF15B65M2 by Alpha & Omega Semiconductor

AOTF15B65M2 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 30A, and toff of 108ns. Ideal for power control applications due to its single configuration with built-in diode and max operating temperature of 150°C.

Median Price

$1.168

Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

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$1.168

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Vyrian

USA . 6,825 parts In-Stock

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VNN

France . 4,412 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.791

100+ parts

$0.720

1k+ parts

$0.649

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200

$0.791

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$0.649

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Continental Prestige Electronics

USA . 3,595 parts In-Stock

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$1.168

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$1.145

3,595

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$1.145

Argo Parts USA

USA . 239 parts In-Stock

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$1.168

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Microchip USA

USA . 2,793 parts In-Stock

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$7.593

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AZTECH Wire

Italy . 277 parts In-Stock

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$16.785

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277

$16.785

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Netroflash

USA . 1,000 parts In-Stock

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$1.145

1k+ parts

$1.110

10k+ parts

$1.086

1,000

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$1.145

$1.110

$1.086

Overview

Unleash the power of innovation with the AOTF15B65M2 by Alpha & Omega Semiconductor. As a leader in the industry, Alpha & Omega Semiconductor delivers top-quality Insulated Gate Bipolar Transistors designed for power control applications. With its N-CHANNEL configuration and built-in diode, this transistor offers exceptional performance and reliability. Whether you're looking to optimize power efficiency or enhance system performance, the AOTF15B65M2 provides the value, benefits, and advantages that customers need to stay ahead in today's competitive market. Elevate your designs with Alpha & Omega Semiconductor's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher efficiency compared to P-channel types, making them suitable for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against reverse current flow, improving overall system efficiency.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable operation in high-power circuits.

Nominal Turn Off Time (toff): 108 ns

The fast turn-off time of this IGBT reduces switching losses and improves overall efficiency in power control applications.

Maximum Power Dissipation (Abs): 36 W

With a high power dissipation capability, this IGBT can handle significant power levels without overheating or failing prematurely.

Maximum Collector-Emitter Voltage: 650 V

The high maximum voltage rating allows this IGBT to be used in high-voltage applications, providing versatility and flexibility in design.

Maximum Gate-Emitter Voltage: 30 V

The gate-emitter voltage rating ensures safe and reliable operation of the IGBT's control input, protecting it from damage due to excess voltage.

Maximum Collector Current (IC): 30 A

With a high maximum collector current rating, this IGBT can handle significant current levels, making it suitable for high-power applications.

Nominal Turn On Time (ton): 33 ns

The fast turn-on time of this IGBT allows for quick and efficient switching, reducing power losses and improving system performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) AOTF15B65M2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Alpha & Omega Semiconductor

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

108 ns

Nominal Turn On Time (ton):

33 ns

Maximum VCEsat:

2.15 V

Trade Compliance

AOTF15B65M2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Alpha & Omega Semiconductor

Alpha and Omega Semiconductor is committed to excellence in design, manufacturing, and responsiveness to our customers through the continued development of new technologies, products and innovative solutions. We bring to the market devices designed to benefit our customers by meeting their product specific needs. Our mission is to bring value to our customers, shareholders and employees. We pride ourself in our expertise in all areas of power semiconductor technology and business operations. Our intellectual property and technical knowledge encompasses the latest advancements in the power semiconductor industry. AOS differentiates itself by integrating its Discrete and IC semiconductor process technology, product design, and advanced packaging know-how to develop high performance power management solutions. AOS's portfolio of products targets high-volume applications, including but not limited to portable computers, flat panel TVs, LED lighting, smart phones, battery packs, consumer and industrial motor controls and power supplies for TVs, computers, servers and telecommunications equipment.

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