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HGTG18N120BND

Onsemi

HGTG18N120BND by Onsemi

HGTG18N120BND by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, suitable for motor control applications. It features a 22ns rise time, 200ns fall time, and 345ns turn off time. The transistor has a max power dissipation of 390W and can handle a collector current of up to 54A.

Median Price

$3.980

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 450 parts In-Stock

1+ parts

$2.980

100+ parts

$2.800

1k+ parts

$2.530

10k+ parts

$2.530

450

$2.980

$2.800

$2.530

$2.530

Newark

USA . 363 parts In-Stock

1+ parts

$4.980

100+ parts

$3.780

1k+ parts

$3.280

10k+ parts

-

363

$4.980

$3.780

$3.280

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Distributors (In-Stock)

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Digiode

USA . 2,137 parts In-Stock

1+ parts

$2.831

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-

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2,137

$2.831

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Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$4.066

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1,000

$4.066

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American Microsemiconductor Inc.

USA . 22 parts In-Stock

1+ parts

$27.540

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22

$27.540

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Vyrian

USA . 333 parts In-Stock

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333

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Cyclops Electronics Ltd

UK . 253 parts In-Stock

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253

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LWI Electronics Inc

India . 117 parts In-Stock

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117

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Inventory MP

USA . 38 parts In-Stock

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38

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Bristol Electronics

USA . 38 parts In-Stock

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38

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 288 parts In-Stock

1+ parts

$2.530

100+ parts

$2.467

1k+ parts

$2.454

10k+ parts

-

288

$2.530

$2.467

$2.454

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Corphita

USA . 2,536 parts In-Stock

1+ parts

$2.682

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2,536

$2.682

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Corohmni

South Africa . 379 parts In-Stock

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$2.980

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379

$2.980

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$4.066

100+ parts

$3.985

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2,000

$4.066

$3.985

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Argo Parts USA

USA . 1,844 parts In-Stock

1+ parts

$4.066

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1,844

$4.066

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Modulus Dynamics

Lithuania . 16,652 parts In-Stock

1+ parts

$4.135

100+ parts

$4.135

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$4.135

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16,652

$4.135

$4.135

$4.135

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Continental Prestige Electronics

USA . 14 parts In-Stock

1+ parts

$4.190

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14

$4.190

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Perfect Parts

USA . 17,223 parts In-Stock

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17,223

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SupplyDigital Components

Austria . 7,896 parts In-Stock

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7,896

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Kulean Microsystems

USA . 7,656 parts In-Stock

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7,656

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Problanco Electronics

Mexico . 4,799 parts In-Stock

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4,799

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TANS Electronics

Latvia . 3,778 parts In-Stock

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3,778

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A-Z Elektronik GmbH

Germany . 1,965 parts In-Stock

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1,965

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Supply Digital

USA . 1,900 parts In-Stock

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1,900

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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1,800

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Alle Elektronik GmbH

Germany . 1,310 parts In-Stock

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1,310

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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UHIMA Technologies

Türkiye . 25 parts In-Stock

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25

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Overview

Unleash the power of innovation with the HGTG18N120BND by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. Designed for motor control applications, this N-CHANNEL transistor offers unparalleled performance with a single configuration and built-in diode. With a maximum collector-emitter voltage of 1200V and a maximum power dissipation of 390W, this IGBT is a game-changer in the field. Trust Onsemi to provide reliable, efficient solutions that drive your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the IGBT, making it durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have higher electron mobility, allowing for faster switching speeds and lower conduction losses.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can help protect against reverse current flow, enhancing efficiency.

Transistor Application: MOTOR CONTROL

Designed specifically for motor control applications, ensuring optimal performance and reliability in this usage scenario.

Maximum Rise Time (tr): 22 ns

The fast rise time allows for quick turn-on of the IGBT, reducing switching losses and improving efficiency.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into various electronic devices or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong connection to the circuit board, enhancing reliability and durability.

Maximum Fall Time (tf): 200 ns

The fast fall time ensures quick turn-off of the IGBT, minimizing switching losses and heat buildup.

Nominal Turn Off Time (toff): 345 ns

The relatively short turn-off time helps to prevent shoot-through currents and improve overall efficiency.

No. of Terminals: 3

The simple three-terminal design makes the IGBT easy to interface with other components, simplifying circuit design.

Maximum Power Dissipation (Abs): 390 W

With a high maximum power dissipation capability, this IGBT can handle heavy loads and high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting, ideal for applications where vibration or mechanical stress is a concern.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand harsh environmental conditions and maintain reliable performance.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum voltage rating makes this IGBT suitable for high-voltage applications and ensures robust performance.

Transistor Element Material: SILICON

Silicon IGBTs are known for their high switching speeds, low forward voltage drop, and high thermal conductivity, making them ideal for various applications.

Maximum Gate-Emitter Voltage: 20 V

The 20V gate-emitter voltage rating ensures safe and reliable operation of the IGBT, protecting it from overvoltage conditions.

Maximum Collector Current (IC): 54 A

With a high maximum collector current rating, this IGBT can handle high current loads without overheating or failing prematurely.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring a secure and long-lasting connection.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures proper alignment in the circuit layout.

Nominal Turn On Time (ton): 38 ns

The quick turn-on time of 38 ns allows for rapid switching and efficient operation of the IGBT in various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) HGTG18N120BND attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

200 ns

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

22 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

345 ns

Nominal Turn On Time (ton):

38 ns

Trade Compliance

HGTG18N120BND Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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