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APT50GR120JD30

Microsemi

APT50GR120JD30 by Microsemi

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 417 W; Maximum Collector Current (IC): 84 A; Maximum Collector-Emitter Voltage: 1200 V; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

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VNN

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Aztec Data Supply Inc.

USA . 4,636 parts In-Stock

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AZTECH Wire

Italy . 731 parts In-Stock

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Semicontronic

India . 540 parts In-Stock

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Corohmni

South Africa . 266 parts In-Stock

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Ampacity Inc.

Singapore . 1,290 parts In-Stock

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Microchip USA

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Argo Parts USA

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT50GR120JD30 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

30 V

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Trade Compliance

APT50GR120JD30 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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