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IXXH100N60C3

IXYS Corporation

IXXH100N60C3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 190 A; Transistor Element Material: SILICON;

Median Price

$13.390

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15 parts In-Stock

1+ parts

$13.360

100+ parts

$8.106

1k+ parts

$6.720

10k+ parts

-

15

$13.360

$8.106

$6.720

-

Mouser Electronics

USA . 1 parts In-Stock

1+ parts

$13.420

100+ parts

-

1k+ parts

$7.620

10k+ parts

-

1

$13.420

-

$7.620

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 62 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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62

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 9,823 parts In-Stock

1+ parts

$52.108

100+ parts

-

1k+ parts

-

10k+ parts

-

9,823

$52.108

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 9,011 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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9,011

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

-

-

-

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Perfect Parts

USA . 93 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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93

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-

-

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Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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50

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXXH100N60C3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

220 ns

Nominal Turn On Time (ton):

95 ns

Trade Compliance

IXXH100N60C3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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