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MMIX4G20N250

Littelfuse

MMIX4G20N250 by Littelfuse

MMIX4G20N250 by Littelfuse is an N-CHANNEL IGBT with 4 elements, VCEsat of 3.1V, and IC of 23A. Ideal for general purpose switching applications, it has a max VCE of 2500V and can handle up to 100W power dissipation. This surface-mount transistor operates at temperatures up to 150°C with fast turn-on (ton) and turn-off (toff) times.

Median Price

$106.120

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DigiKey

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Advanced Electronics

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Corohmni

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Overview

Discover the cutting-edge technology of the MMIX4G20N250 by Littelfuse, a leading manufacturer in the industry. This Insulated Gate Bipolar Transistor (IGBT) offers high-quality performance for general purpose switching applications. With its N-CHANNEL polarity and complex configuration, this transistor provides efficient power management with a maximum Collector-Emitter Voltage of 2500V and a Maximum Power Dissipation of 100W. Trust in Littelfuse's reputation for excellence and experience the value and benefits that the MMIX4G20N250 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher efficiency compared to P-channel types.

Transistor Application: GENERAL PURPOSE SWITCHING

Versatile application potential for various switching tasks in both industrial and consumer electronics.

Maximum VCEsat: 3.1 V

Low voltage drop during saturation, leading to high efficiency and reduced power losses in operation.

Maximum Power Dissipation (Abs): 100 W

Ability to handle high power levels ensures robust performance in demanding environments.

Maximum Collector- Emitter Voltage: 2500 V

Supports high-voltage applications, making it suitable for power electronics and other high-power systems.

Nominal Turn On Time (ton): 217 ns

Fast turn-on time enhances switching speed, crucial for efficient operation in high-frequency applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MMIX4G20N250 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2500 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PDSO-G9

No. of Elements:

4

No. of Terminals:

9

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

1066 ns

Nominal Turn On Time (ton):

217 ns

Maximum VCEsat:

3.1 V

Trade Compliance

MMIX4G20N250 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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