Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MMIX1Y100N120C3H1 by Littelfuse is an N-CHANNEL IGBT with 400W power dissipation, 1200V collector-emitter voltage, and 92A collector current. Ideal for high-power applications requiring efficient switching capabilities in surface-mount designs.
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N-CHANNEL type IGBTs have higher electron mobility and lower on-state voltage drop, making them more efficient for high power applications.
Surface mount IGBTs are easy to install, take up less space on the PCB, and have lower parasitic inductance, improving overall system performance.
With a high maximum power dissipation of 400W, this IGBT can handle high power levels without overheating, ensuring reliability in demanding applications.
The IGBT can operate at high temperatures up to 150°C, making it suitable for use in harsh environments or applications where cooling may be limited.
The high maximum collector-emitter voltage of 1200V allows the IGBT to be used in high voltage circuits and power supplies.
With a maximum gate-emitter voltage of 20V, the IGBT is easy to drive and can be controlled with standard logic level signals.
The high maximum collector current of 92A allows the IGBT to handle large current loads, making it suitable for high power applications.
The low gate-emitter threshold voltage of 5V ensures efficient switching of the IGBT and reduces power losses during operation.
Insulated Gate Bipolar Transistors (IGBT) MMIX1Y100N120C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
MMIX1Y100N120C3H1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.
2N7002
Kec
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
EU2B-YS3103F
Idec
ROTARY SWITCH;
LL4148GS08
Temic Semiconductors
LL4148GS08 by Temic Semiconductors is a glass diode with a max reverse recovery time of 0.008 us and max forward voltage of 1 V. It is a rectifier diode with a max output current of 0.15 A, ideal for applications requiring fast switching speeds and low power dissipation in electronic circuits.
4554
Jw Miller Magnetics
Other Semiconductors;
FDLL4148
Onsemi
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
PAP-06V-S
J S T Mfg
PAP-06V-S by J S T Mfg is a 6-contact BOARD CONNECTOR with 94V-0 UL Flammability Code. It has FEMALE contacts, CRIMP termination, and comes WITH CABLE ASSEMBLY for CABLE mounting applications.
EU2B-YS303C
2N2222A
Gec Plessey Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
SS14
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 30 A; Maximum Forward Voltage (VF): .55 V; No. of Phases: 1;
1N4148
Synsemi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
World Products
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
LM7805CT
Texas Instruments
LM7805CT by Texas Instruments is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates b/w 0-125°C, has a dropout voltage of 2V, and offers excellent line/load regulation for various electronic applications.
1N4148WT
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Forward International Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .6 A;
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
IKW15N120T2FKSA1
Infineon Technologies
IKW15N120T2FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 626ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT in PLASTIC/EPOXY material.
FF450R12ME4EB11BPSA1
FF450R12ME4EB11BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, a 740 ns turn off time, and 1200V max collector-emitter voltage. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems.
STGB25N40LZAG
STMicroelectronics
STGB25N40LZAG by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.25V, IC of 25A, and Ptot of 150W. Ideal for automotive ignition applications due to its built-in TVS diode and resistor. Operates b/w -55°C to 175°C temperature range, meeting AEC-Q101 standards.
IRG4BC30W-SPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; Maximum Collector-Emitter Voltage: 600 V;
CM150TX-24S
Mitsubishi Electric
Mitsubishi Electric's CM150TX-24S is an N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. Ideal for power control applications, it has a max VCEsat of 2.25V and can handle up to 150A collector current. With a max operating temperature of 150°C and UL recognition, it offers reliable performance in various industrial settings.
FF600R12ME4AB11BPSA1
Insulated Gate Bipolar Transistors;
IXXX200N65B4
Littelfuse
Littelfuse IXXX200N65B4 is an N-CHANNEL IGBT with 650V VCEsat, 480A IC, and 1.7V VGE. Ideal for POWER CONTROL applications due to its high power dissipation of 1630W and fast turn-off time of 370ns. The transistor operates b/w -55°C to 175°C temperature range in a RECTANGULAR package style.
IRG4PSH71UDPBF
Infineon's IRG4PSH71UDPBF is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 99A max collector current. It features a built-in diode, 330ns fall time, and 810ns turn off time. Ideal for power control applications with a max power dissipation of 350W at up to 150°C operating temperature.
IRG4PC50WPBF
IRG4PC50WPBF by Infineon is an N-CHANNEL IGBT transistor with 600V VCE, 55A IC, and 200W power dissipation. Ideal for POWER CONTROL applications due to its fast switching times (toff:177ns, tf:86ns) and high operating temperature range (-55°C to 150°C).
FGL60N100BNTDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Package Body Material: PLASTIC/EPOXY;
APT35GT120JU2
Microchip Technology
Microchip Technology's APT35GT120JU2 is an N-CHANNEL IGBT with 1200V VCEsat, 55A IC, and 260W power dissipation. Ideal for power control applications due to its fast turn-off time of 610ns and built-in diode configuration. Operates at up to 150°C temperature, making it suitable for high-power systems.
HGT1S10N120BNS
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 35 A; Package Shape: RECTANGULAR;
APT70GR120J
Microchip Technology's APT70GR120J is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 112A max collector current. Ideal for motor control applications, it features a built-in diode, 394ns turn-off time, and 543W power dissipation capability.
IXGH60N60C3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;
BSM75GB120DN2
Eupec & Kg
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 75 A; JESD-30 Code: R-XUFM-X7;
IKW60N60H3FKSA1
IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
ISL9V3040P3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Shape: RECTANGULAR;
IXXX160N65C4
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 290 A; Maximum Collector-Emitter Voltage: 650 V; Maximum Operating Temperature: 175 Cel;
FF900R12IE4BOSA1
FF900R12IE4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and can handle a max collector current of 900A. Ideal for power control applications due to its fast turn on time of 350ns and turn off time of 940ns at a max operating temperature of 175°C.
5SNA3600E170300
Abb
Abb's 5SNA3600E170300 IGBT features N-CHANNEL polarity, 3600A IC, and 1700V VCE. Ideal for power control applications with a complex configuration and fast ton of 835ns.
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MMIX4B22N300
MMIX4B22N300 by IXYS Corporation is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector-emitter voltage of 3000V. It is used for power control applications and has a small outline package style, making it suitable for surface mount installations.
MMIX4G20N250
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 4;
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Terminals: 9;
MMIX1Y100N120C3H1
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 92 A; Maximum Gate-Emitter Threshold Voltage: 5 V; Maximum Collector-Emitter Voltage: 1200 V;
MMIX1B15N300C
Insulated Gate Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MMIX1B20N300C
MMIX1G120N120A3V1
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Maximum Collector Current (IC): 220 A; Maximum Gate-Emitter Threshold Voltage: 5 V; Maximum Gate-Emitter Voltage: 20 V;
MMIX1G320N60B3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 400 A; Maximum Operating Temperature: 150 Cel;
MMIX1G75N250
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 430 W; Maximum Collector Current (IC): 110 A; Maximum Gate-Emitter Voltage: 20 V;
MMIX1X100N60B3H1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 105 A; Case Connection: ISOLATED;
MMIX1X200N60B3
MMIX1X200N60B3H1
MMIX1X340N65B4
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 450 A; No. of Elements: 1;
MMIX1Y25N250CV1
MMIX1Y82N120C3H1
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 78 A; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
MMIX4B12N300
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 22 A; Package Style (Meter): SMALL OUTLINE;
MMIX4B20N300
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Collector Current (IC): 34 A; Nominal Turn Off Time (toff): 695 ns; Terminal Position: DUAL;
MMIX4B22N300-2
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