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FGL40N120AND

Onsemi

FGL40N120AND by Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 64 A; Maximum Operating Temperature: 150 Cel;

Median Price

$9.800

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 2 parts In-Stock

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$9.800

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Chip Stock

USA . 10,500 parts In-Stock

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Digiode

USA . 2,499 parts In-Stock

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2,499

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Vyrian

USA . 1,076 parts In-Stock

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Nova Conductors

Japan . 83 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 62 parts In-Stock

1+ parts

$0.938

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$0.938

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Corohmni

South Africa . 66 parts In-Stock

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$9.800

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AZTECH Wire

Italy . 863 parts In-Stock

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$18.953

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$18.953

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Ampacity Inc.

Singapore . 1,595 parts In-Stock

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$51.050

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 9,750 parts In-Stock

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Problanco Electronics

Mexico . 7,135 parts In-Stock

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Kulean Microsystems

USA . 6,145 parts In-Stock

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TANS Electronics

Latvia . 5,557 parts In-Stock

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Continental Prestige Electronics

USA . 4,120 parts In-Stock

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Lixinc

USA . 3,041 parts In-Stock

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Perfect Parts

USA . 2,374 parts In-Stock

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Supply Digital

USA . 2,202 parts In-Stock

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Argo Parts USA

USA . 1,757 parts In-Stock

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SupplyDigital Components

Austria . 1,249 parts In-Stock

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Corphita

USA . 928 parts In-Stock

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928

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Infinite Electronics LLP (Excess)

. 903 parts In-Stock

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903

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UHIMA Technologies

Türkiye . 381 parts In-Stock

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ChipstoGo Electronic ltd

UK . 99 parts In-Stock

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99

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Aranea Global

USA . 50 parts In-Stock

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50

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGL40N120AND attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

80 ns

Maximum Gate-Emitter Threshold Voltage:

7.5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-264

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

165 ns

Nominal Turn On Time (ton):

45 ns

Maximum VCEsat:

3.2 V

Trade Compliance

FGL40N120AND Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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