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FGL40N120ANTU

Onsemi

FGL40N120ANTU by Onsemi

FGL40N120ANTU by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 64A IC, and 165ns toff. Ideal for MOTOR CONTROL applications, it has a SINGLE configuration in a PLASTIC/EPOXY package with THROUGH-HOLE terminals. Operating up to 150°C, it offers fast switching with 45ns ton.

Median Price

$9.382

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 900 parts In-Stock

1+ parts

-

100+ parts

$8.340

1k+ parts

$7.460

10k+ parts

$7.020

900

-

$8.340

$7.460

$7.020

Verical

USA . 900 parts In-Stock

1+ parts

-

100+ parts

$10.425

1k+ parts

$9.875

10k+ parts

-

900

-

$10.425

$9.875

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,071 parts In-Stock

1+ parts

$8.835

100+ parts

-

1k+ parts

-

10k+ parts

-

1,071

$8.835

-

-

-

Vyrian

USA . 1,455 parts In-Stock

1+ parts

$9.300

100+ parts

-

1k+ parts

-

10k+ parts

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1,455

$9.300

-

-

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Chip Stock

USA . 4,254 parts In-Stock

1+ parts

-

100+ parts

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4,254

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 640 parts In-Stock

1+ parts

$5.130

100+ parts

$4.500

1k+ parts

-

10k+ parts

-

640

$5.130

$4.500

-

-

Corphita

USA . 2,724 parts In-Stock

1+ parts

$8.370

100+ parts

-

1k+ parts

-

10k+ parts

-

2,724

$8.370

-

-

-

Corohmni

South Africa . 219 parts In-Stock

1+ parts

$9.300

100+ parts

-

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219

$9.300

-

-

-

Microchip USA

USA . 263 parts In-Stock

1+ parts

$24.976

100+ parts

-

1k+ parts

-

10k+ parts

-

263

$24.976

-

-

-

Perfect Parts

USA . 31,668 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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31,668

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-

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SupplyDigital Components

Austria . 6,351 parts In-Stock

1+ parts

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6,351

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-

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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5,000

-

-

-

-

Glotronic Ltd.

UK . 3,900 parts In-Stock

1+ parts

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100+ parts

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3,900

-

-

-

-

Northwest PG Solutions

USA . 2,301 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.520

10k+ parts

-

2,301

-

-

$3.520

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TANS Electronics

Latvia . 1,686 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,686

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-

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Kulean Microsystems

USA . 1,107 parts In-Stock

1+ parts

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100+ parts

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1,107

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UHIMA Technologies

Türkiye . 758 parts In-Stock

1+ parts

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758

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Problanco Electronics

Mexico . 457 parts In-Stock

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457

-

-

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Native Components

USA . 390 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.484

10k+ parts

-

390

-

-

$3.484

-

Kepictronics

USA . 375 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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375

-

-

-

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Supply Digital

USA . 270 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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270

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-

Overview

Enhance your motor control systems with the FGL40N120ANTU from Onsemi, a trusted manufacturer known for top-quality Insulated Gate Bipolar Transistors. This N-channel transistor offers reliable performance and precise control, making it ideal for a variety of applications. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of only 165ns, this transistor provides exceptional efficiency and power management. Upgrade your projects with the FGL40N120ANTU and experience seamless operation and enhanced functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and mechanical properties, ensuring reliable performance and durability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs offer better performance and efficiency compared to P-CHANNEL IGBTs in motor control applications.

Configuration: SINGLE

Simplifies the design and control of the motor control circuit.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimized performance and efficiency.

Package Shape: RECTANGULAR

Allows for easy integration into existing circuit layouts and designs.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting onto a circuit board.

Nominal Turn Off Time (toff): 165 ns

Fast turn off time helps in reducing switching losses and improving efficiency of the system.

No. of Terminals: 3

Simplifies the connection and integration of the IGBT into the circuit.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and easy installation in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 1200 V

Designed to handle high voltage applications, providing versatility in motor control systems.

Transistor Element Material: SILICON

Silicon IGBTs offer better performance and reliability compared to other materials.

Maximum Collector Current (IC): 64 A

High collector current rating allows for handling of high current levels, making it suitable for motor control applications.

Terminal Finish: MATTE TIN

Provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: SINGLE

Simplifies the connection of the IGBT to the circuit.

Nominal Turn On Time (ton): 45 ns

Fast turn on time helps in improving the switching speed and efficiency of the system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGL40N120ANTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

165 ns

Nominal Turn On Time (ton):

45 ns

Trade Compliance

FGL40N120ANTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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