Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Fairchild Semiconductor's ISL9V5036P3_F085 is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Power Dissipation of 250W. It features a built-in diode and resistor, making it suitable for POWER CONTROL applications requiring fast switching times up to 7000ns rise time and 15000ns fall time.
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The plastic/epoxy material used for the package body provides durability and protection for the components inside, making it a reliable choice for various applications.
The N-channel type allows for efficient power control and handling, making this product suitable for power management tasks.
The built-in diode and resistor simplify circuit design and implementation, saving time and effort in the assembly process.
Designed specifically for power control applications, this IGBT offers precision and reliability in managing power levels effectively.
With a fast rise time, this IGBT can quickly respond to changes in input signals, ensuring efficient power management.
The rectangular package shape allows for easy integration into circuit designs, making it a versatile choice for a variety of applications.
The through-hole terminal form provides secure connections and ease of soldering, ensuring stable performance in operation.
As a single element device, this IGBT is easy to handle and integrate into circuit designs, making it an efficient choice for power control tasks.
The long fall time ensures smooth transitions during power control operations, minimizing the risk of voltage spikes and surges.
The nominal turn off time of 13600 ns allows for precise control over power levels and transitions, ensuring accurate operation in power management tasks.
With three terminals, this IGBT is easy to connect and integrate into circuit designs, providing flexibility and ease of use.
The maximum power dissipation of 250 W ensures reliable performance under high power loads, making it suitable for demanding applications.
The flange mount package style offers secure mounting options, ensuring stability and reliability in various installation settings.
With a high maximum operating temperature of 175°C, this IGBT can withstand elevated temperatures, making it suitable for harsh environments.
The high collector-emitter voltage rating of 360 V provides a wide voltage range for power management tasks, offering versatility and reliability.
The use of silicon as the transistor element material ensures high performance and durability, making this IGBT a long-lasting choice for power control applications.
The maximum gate-emitter voltage of 12 V allows for precise control and modulation of the IGBT, ensuring accurate power management.
With a maximum collector current of 46 A, this IGBT can handle high current loads, making it suitable for power control applications that require a robust performance.
The gate-emitter threshold voltage of 2.2 V ensures efficient switching and control over the IGBT, providing reliable power management capabilities.
The matte tin terminal finish offers corrosion resistance and solderability, ensuring long-term reliability and performance in various operating conditions.
With a single terminal position, this IGBT is easy to install and connect in circuit designs, providing convenience and flexibility in use.
The case connection to the collector enhances heat dissipation and efficiency, ensuring stable operation in high-power applications.
The nominal turn on time of 2800 ns allows for quick response and activation, ensuring precise control and management of power levels.
Insulated Gate Bipolar Transistors (IGBT) ISL9V5036P3_F085 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fairchild Semiconductor
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Maximum Fall Time (tf):
Maximum Gate-Emitter Threshold Voltage:
Maximum Gate-Emitter Voltage:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Rise Time (tr):
Sub-Category:
Surface Mount:
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Transistor Application:
Transistor Element Material:
Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
ISL9V5036P3_F085 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Design/Specification - Logo 17/Aug/2017
PCN Packaging - Mult Devices 24/Oct/2017
PCN Part Number - Mult Device Part Number Chg 30/May/2017
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
SMBJ18CA
General Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
LL4148
Excel (Suzhou) Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
RK73H2ATTD10R0F
Koa Speer Electronics
RK73H2ATTD10R0F by Koa Speer Electronics is a 0805 SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.25 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V.
EEAGA1H4R7
Panasonic
Panasonic EEAGA1H4R7 is a 4.7uF, 50V Aluminum Electrolytic Capacitor with 0.1 Tan Delta and 0.003mA Leakage Current. Ideal for applications requiring high ripple current handling in temperatures ranging from -55 to 105°C.
FDLL4148
Fairchild Semiconductor
BAV99
Won-top Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): .715 V; Maximum Operating Temperature: 150 Cel; Maximum Reverse Recovery Time: .006 us; Maximum Output Current: .2 A;
SS14
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;
MMBT2907ALT1G
Rochester Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Form: GULL WING;
Taitron Components
M39029/58-360
Glenair
CONNECTOR ACCESSORY; Contact Gender: MALE; Material: COPPER ALLOY; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT; MIL Conformity: YES;
Telefunken Microelectronics
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
M24308/2-1F
Cristek Interconnects
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; No. of Rows Loaded: 2; Shell Size: 1/E; Filter Feature: NO;
NC7WZ07P6X
Onsemi
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
1N4148
ROHM
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
IXYF40N450
Littelfuse
Littelfuse IXYF40N450 is an N-CHANNEL IGBT with 4500V VCEsat, 60A IC, and 290W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 1128ns and high operating temperature range from -55°C to 150°C. Package style is IN-LINE with PLASTIC/EPOXY body material.
FGH40N65UFDTU-F085
FGH40N65UFDTU-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature up to 150°C, and a turn-off time (toff) of 152ns. This RECTANGULAR package transistor features a built-in diode and matte tin finish for efficient performance in various power control systems.
FP10R12W1T4BOMA1
Infineon Technologies
Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
FGH60N60SMD_F085
Fairchild Semiconductor's FGH60N60SMD_F085 is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 66ns ton. Ideal for power control applications, it features a single configuration with built-in diode in a plastic/epoxy package. The transistor has a nominal turn-off time of 139ns and meets AEC-Q101 standards.
FS150R12KT4_B11
FS150R12KT4_B11 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a VCEsat of 2.2V, IC of 150A, and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and power supplies due to its low on/off times and high collector-emitter voltage.
IRG4PC50UDPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; No. of Terminals: 3;
IXGA20N120A3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Shape: RECTANGULAR;
IGW30N60H3FKSA1
IGW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The transistor's package style is flange mount with through-hole terminals, suitable for high-power applications in industrial settings.
SKM145GB066D
Semikron International
Semikron International's SKM145GB066D is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 1.9V and can handle up to 195A of Collector Current. Ideal for POWER CONTROL applications, this IGBT operates at a max temperature of 175°C with a fast Turn Off Time of 536ns.
IXYH50N120C3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Terminal Finish: MATTE TIN;
IRG4BC10SD-SPBF
IRG4BC10SD-SPBF by Infineon is an N-channel IGBT with a max VCEsat of 1.8V and IC of 14A, ideal for power control applications. It has a package style of small outline, operates at temperatures from -55 to 150°C, and features a built-in diode for efficient switching performance.
FP25R12W2T4P_B11ENG
Infineon's FP25R12W2T4P_B11ENG IGBT features 1200V VCEsat, 520ns toff, and 47ns ton. Ideal for high-power applications in industries like automotive, renewable energy, and industrial automation due to its N-Channel polarity and -40°C to 150°C operating temperature range.
SKM100GB063D
SKM100GB063D by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 2.5V, Max IC of 130A, and can handle up to 450W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 335ns and high collector-emitter voltage of 600V.
SGS10N60RUFDTU
SGS10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 35W Pd. Ideal for MOTOR CONTROL applications due to its fast tf of 220ns and toff of 284ns. The package style is FLANGE MOUNT with a max operating temp of 150°C.
FGD3040G2-F085V
FGD3040G2-F085V by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.85V and a max collector current (IC) of 41A. It is commonly used for power control applications due to its high power dissipation of 150W and small outline package style.
FP100R06KE3
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn Off Time (toff): 820 ns; Nominal Turn On Time (ton): 170 ns; Package Shape: RECTANGULAR;
APT45GP120J
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 329 W; Maximum Collector Current (IC): 75 A; Case Connection: ISOLATED;
IRG4BC40UPBF
IRG4BC40UPBF by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 40A max collector current, and 160W max power dissipation. Ideal for power control applications, it has a single configuration in a rectangular package with through-hole terminals. Operating temperature ranges from -55 to 150°C.
APT80GP60B2G
Microchip Technology
APT80GP60B2G by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 284ns and a turn-on time of 87ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with through-hole terminals, suitable for high-power electronic systems operating at temperatures up to 150°C.
IXA17IF1200HJ
IXA17IF1200HJ by Littelfuse is an N-CHANNEL IGBT with 1200V VCEsat, 28A IC, and 100W power dissipation. Ideal for power control applications, it features a built-in diode, -40 to 150 °C operating temp range, and fast switching times of 110ns turn on and 350ns turn off.
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ISL9V3040D3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Style (Meter): SMALL OUTLINE;
ISL9V3040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 450V and can handle a max collector current of 21A. This IGBT comes in a small outline package style and operates b/w -40 to 175 °C temperature range.
ISL9V3040P3
ISL9V3040P3 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V, ideal for AUTOMOTIVE IGNITION applications. It has a Max Collector-Emitter Voltage of 450V and can handle a Max Collector Current of 21A. This IGBT comes in a RECTANGULAR package style with THROUGH-HOLE terminals.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Package Shape: RECTANGULAR;
ISL9V3040D3ST-F085C
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Maximum Rise Time (tr): .007 ns;
ISL9V3040D3STV
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Nominal Turn Off Time (toff): 7600 ns;
ISL9V5036P3-F085
ISL9V5036P3-F085 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 360V and Max Collector Current of 46A. It is designed for POWER CONTROL applications, featuring a built-in diode and resistor in a RECTANGULAR package style. With a Max Power Dissipation of 250W, it operates at temperatures up to 175°C efficiently.
ISL9V2040D3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; No. of Terminals: 2;
ISL9V2040D3ST by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V, ideal for AUTOMOTIVE IGNITION applications. It has a max collector-emitter voltage of 390V and can handle a max collector current of 10A. This IGBT comes in a small outline package style with gull wing terminals for surface mount assembly.
ISL9V3036S3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Peak Reflow Temperature (C): 260;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Maximum Fall Time (tf): 15000 ns;
ISL9V2540S3ST
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 166.7 W; Maximum Collector Current (IC): 15.5 A; No. of Terminals: 2;
ISL9V3036S3ST-F085C
Insulated Gate Bipolar Transistors;
ISL9V2040D3STV
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
ISL9V2540S3ST-F085C
ISL9V3040D3S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Maximum Turn On Time (ton): 11000 ns;
ISL9V3036D3S
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 21 A; Maximum Operating Temperature: 175 Cel;
ISL9V2040P3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;
ISL9V3036D3ST
ISL9V5036P3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 46 A; Terminal Form: THROUGH-HOLE;
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