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ISL9V3036D3S

Onsemi

ISL9V3036D3S by Onsemi

ISL9V3036D3S by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.6V and a max IC of 21A. Ideal for automotive ignition applications, it features a built-in diode and resistor in a small outline package style. Operating temperature ranges from -40 to 175 °C, making it suitable for various automotive environments.

Median Price

$1.586

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,615 parts In-Stock

1+ parts

-

100+ parts

$1.560

1k+ parts

$1.290

10k+ parts

$1.150

3,615

-

$1.560

$1.290

$1.150

Verical

USA . 1,815 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.613

10k+ parts

$1.438

1,815

-

-

$1.613

$1.438

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,237 parts In-Stock

1+ parts

$1.160

100+ parts

-

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-

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2,237

$1.160

-

-

-

Digiode

USA . 2,930 parts In-Stock

1+ parts

$1.216

100+ parts

-

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-

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2,930

$1.216

-

-

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Electronic Expediters

USA . 325 parts In-Stock

1+ parts

-

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325

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,502 parts In-Stock

1+ parts

$0.990

100+ parts

-

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-

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-

3,502

$0.990

-

-

-

Corphita

USA . 2,243 parts In-Stock

1+ parts

$1.152

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-

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2,243

$1.152

-

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Corohmni

South Africa . 140 parts In-Stock

1+ parts

$1.160

100+ parts

-

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140

$1.160

-

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Component Stockers USA

USA . 2,654 parts In-Stock

1+ parts

$1.290

100+ parts

$1.210

1k+ parts

$1.100

10k+ parts

-

2,654

$1.290

$1.210

$1.100

-

Microchip USA

USA . 162 parts In-Stock

1+ parts

$7.995

100+ parts

-

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162

$7.995

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 19,471 parts In-Stock

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19,471

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Kulean Microsystems

USA . 4,403 parts In-Stock

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Continental Prestige Electronics

USA . 3,615 parts In-Stock

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100+ parts

$1.530

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3,615

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$1.530

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TANS Electronics

Latvia . 3,319 parts In-Stock

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3,319

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Supply Digital

USA . 2,507 parts In-Stock

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2,507

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SupplyDigital Components

Austria . 2,110 parts In-Stock

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2,110

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Problanco Electronics

Mexico . 1,500 parts In-Stock

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1,500

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UHIMA Technologies

Türkiye . 916 parts In-Stock

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916

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Overview

Unleash the power of automotive ignition systems with the ISL9V3036D3S by Onsemi. This Insulated Gate Bipolar Transistor (IGBT) offers exceptional quality and reliability, thanks to Onsemi's reputation for manufacturing excellence. Ideal for high-performance applications, this N-CHANNEL transistor with a built-in diode and resistor ensures efficient operation and optimal performance. Experience seamless functionality and enhanced durability with this surface-mount device, making it the perfect choice for automotive ignition systems. Upgrade your projects with the ISL9V3036D3S and enjoy unmatched value and benefits that cater to your specific needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and high durability, making it suitable for automotive applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient switching characteristics and higher voltage capability.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and reduces component count, saving space and cost.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring reliable performance in the intended application.

Surface Mount: YES

Facilitates easy installation and maintenance in modern electronic designs.

Maximum VCEsat: 1.6 V

Low saturation voltage minimizes power loss and improves efficiency.

Maximum Power Dissipation (Abs): 150 W

Capable of handling high power levels, suitable for automotive ignition systems.

Maximum Operating Temperature: 175 °C

Can withstand high temperature environments typically found in automotive applications.

Maximum Collector-Emitter Voltage: 350 V

Provides high voltage handling capability for automotive ignition systems.

Maximum Gate-Emitter Voltage: 10 V

Allows for safe and reliable gate control operation.

Maximum Collector Current (IC): 21 A

High collector current rating for robust performance in automotive ignition systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) ISL9V3036D3S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

10 V

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

7000 ns

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

30000 ns

Nominal Turn Off Time (toff):

7600 ns

Maximum Turn On Time (ton):

11000 ns

Nominal Turn On Time (ton):

2800 ns

Maximum VCEsat:

1.6 V

Trade Compliance

ISL9V3036D3S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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