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IRG4BC10SD-SPBF

Infineon Technologies

IRG4BC10SD-SPBF by Infineon Technologies

IRG4BC10SD-SPBF by Infineon is an N-channel IGBT with a max VCEsat of 1.8V and IC of 14A, ideal for power control applications. It has a package style of small outline, operates at temperatures from -55 to 150°C, and features a built-in diode for efficient switching performance.

Median Price

$1.348

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,050 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.100

10k+ parts

$0.977

2,050

-

$1.320

$1.100

$0.977

Verical

USA . 1,950 parts In-Stock

1+ parts

-

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-

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$1.375

10k+ parts

$1.221

1,950

-

-

$1.375

$1.221

Distributors (In-Stock)

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.966

100+ parts

-

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-

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300

$0.966

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-

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Digiode

USA . 966 parts In-Stock

1+ parts

$1.026

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966

$1.026

-

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DigiKey Marketplace

USA . 2,050 parts In-Stock

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2,050

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Vyrian

USA . 1,577 parts In-Stock

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1,577

-

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ComSIT Distribution GmbH

Germany . 250 parts In-Stock

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250

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Ashlea Components Ltd

UK . 66 parts In-Stock

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66

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Ampacity Inc.

Singapore . 1,741 parts In-Stock

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$0.920

100+ parts

-

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-

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-

1,741

$0.920

-

-

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Modulus Dynamics

Lithuania . 20,322 parts In-Stock

1+ parts

$0.966

100+ parts

$0.927

1k+ parts

$0.889

10k+ parts

-

20,322

$0.966

$0.927

$0.889

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Argo Parts USA

USA . 3,379 parts In-Stock

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$0.966

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3,379

$0.966

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Continental Prestige Electronics

USA . 1,259 parts In-Stock

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$0.966

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$0.947

1,259

$0.966

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-

$0.947

Corphita

USA . 729 parts In-Stock

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$0.972

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729

$0.972

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Component Stockers USA

USA . 1,584 parts In-Stock

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$1.120

100+ parts

$1.050

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$0.950

10k+ parts

-

1,584

$1.120

$1.050

$0.950

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Microchip USA

USA . 8,265 parts In-Stock

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$6.760

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8,265

$6.760

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QUARKTWIN TECHNOLOGY LTD

USA . 22,143 parts In-Stock

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22,143

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USA . 5,000 parts In-Stock

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5,000

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Perfect Parts

USA . 336 parts In-Stock

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336

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Netroflash

USA . 50 parts In-Stock

1+ parts

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100+ parts

$0.947

1k+ parts

$0.918

10k+ parts

$0.898

50

-

$0.947

$0.918

$0.898

Overview

Unlock the power of precision with the IRG4BC10SD-SPBF by Infineon Technologies. This Insulated Gate Bipolar Transistor (IGBT) is designed for power control applications, offering exceptional performance and reliability. Infineon Technologies, a trusted manufacturer, has crafted this N-CHANNEL transistor with a built-in diode, providing customers with a high-quality solution for their needs. With a maximum VCEsat of 1.8V and a maximum collector-emitter voltage of 600V, this IGBT delivers efficiency and durability in a compact package. Experience seamless operation and optimal performance with the IRG4BC10SD-SPBF, setting the standard for excellence in power electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Enhances the efficiency and performance of the transistor in power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified design with built-in diode for easier integration and enhanced functionality.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Maximum VCEsat: 1.8 V

Low VCEsat value improves efficiency and reduces power losses in the transistor.

Package Shape: RECTANGULAR

Compact rectangular shape allows for easy mounting and installation in various systems.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and proper heat dissipation for the transistor.

Maximum Fall Time (tf): 1080 ns

Fast fall time ensures quick switching speeds and efficient power control.

Nominal Turn Off Time (toff): 1535 ns

Optimal turn-off time for smooth and reliable operation of the transistor in power control applications.

No. of Terminals: 2

Simple two-terminal design for easy installation and connection in circuits.

Maximum Power Dissipation (Abs): 38 W

High power dissipation capacity allows for handling of heavy loads and power control tasks effectively.

Package Style (Meter): SMALL OUTLINE

Compact small outline package for space-saving and efficient integration of the transistor.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to function reliably in various environmental conditions.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating for handling high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material provides good electrical properties and reliability for the transistor.

Maximum Gate-Emitter Voltage: 20 V

High gate-emitter voltage rating for efficient control and operation of the transistor.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for reliable performance even in extreme cold conditions.

Maximum Collector Current (IC): 14 A

High collector current rating for handling heavy loads and power control tasks effectively.

Maximum Gate-Emitter Threshold Voltage: 6 V

Optimal gate-emitter threshold voltage for efficient control and operation of the transistor.

Maximum Turn Off Time (toff): 2280 ns

Long turn-off time for smooth transition and operation of the transistor in power control applications.

Terminal Finish: MATTE TIN OVER NICKEL

Matte tin finish over nickel provides good corrosion resistance and ensures long-term reliability of the terminals.

Terminal Position: SINGLE

Single terminal position for simple and easy connection in circuits.

Case Connection: COLLECTOR

Case connection at collector for efficient heat dissipation and proper functioning of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow time ensures proper soldering and connection of the transistor in circuits.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable and durable soldering of the transistor in circuits.

Nominal Turn On Time (ton): 108 ns

Fast turn-on time for quick and efficient operation of the transistor in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4BC10SD-SPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

1080 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2280 ns

Nominal Turn Off Time (toff):

1535 ns

Nominal Turn On Time (ton):

108 ns

Maximum VCEsat:

1.8 V

Trade Compliance

IRG4BC10SD-SPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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