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SKM300GB125D

Semikron International

SKM300GB125D by Semikron International

Semikron International's SKM300GB125D is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3.85V and can handle up to 1200V Collector-Emitter Voltage. Ideal for POWER CONTROL applications due to its fast Turn Off Time (490ns) and high Collector Current (300A).

Median Price

$159.250

Lifecycle Status

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Forefront Electronics and Design

USA . 5 parts In-Stock

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AZTECH Wire

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Overview

Experience unparalleled power control with the SKM300GB125D by Semikron International, a top-of-the-line Insulated Gate Bipolar Transistor (IGBT) designed for maximum performance and reliability. With a robust construction and advanced technology, this N-CHANNEL transistor offers superior efficiency and precision in a variety of applications. Whether you're looking to optimize your power systems or enhance your industrial processes, the SKM300GB125D delivers unmatched value, benefits, and advantages that will elevate your projects to new heights. Trust Semikron International for cutting-edge solutions that push the boundaries of innovation.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL polarity allows for efficient power control and high performance in various applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration provides improved power handling capabilities and reliability for power control applications.

Maximum VCEsat: 3.85 V

Low VCEsat value indicates minimal power loss and high efficiency during operation.

Nominal Turn Off Time (toff): 490 ns

Fast turn off time results in precise control over power flow and enhanced performance.

Maximum Collector-Emitter Voltage: 1200 V

High maximum voltage rating allows for handling of large power loads and varying voltages.

Maximum Collector Current (IC): 300 A

High collector current rating enables the transistor to handle high power applications with ease.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures stable performance even in demanding environments.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKM300GB125D attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

JESD-609 Code:

e2

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

490 ns

Nominal Turn On Time (ton):

170 ns

Maximum VCEsat:

3.85 V

Trade Compliance

SKM300GB125D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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