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IKQ75N120CT2XKSA1

Infineon Technologies

IKQ75N120CT2XKSA1 by Infineon Technologies

IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.

Median Price

$13.800

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 266 parts In-Stock

1+ parts

$12.520

100+ parts

$7.551

1k+ parts

$6.174

10k+ parts

-

266

$12.520

$7.551

$6.174

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Mouser Electronics

USA . 221 parts In-Stock

1+ parts

$13.010

100+ parts

$8.480

1k+ parts

$7.550

10k+ parts

-

221

$13.010

$8.480

$7.550

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Chip1Stop

Japan . 225 parts In-Stock

1+ parts

$13.800

100+ parts

-

1k+ parts

-

10k+ parts

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225

$13.800

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-

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Arrow

USA . 240 parts In-Stock

1+ parts

$14.948

100+ parts

$12.000

1k+ parts

$11.034

10k+ parts

-

240

$14.948

$12.000

$11.034

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RS (Exports)

UK . 240 parts In-Stock

1+ parts

$17.020

100+ parts

$12.598

1k+ parts

-

10k+ parts

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240

$17.020

$12.598

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-

Newark

USA . 251 parts In-Stock

1+ parts

$17.310

100+ parts

$11.510

1k+ parts

-

10k+ parts

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251

$17.310

$11.510

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Verical

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$3.285

1k+ parts

-

10k+ parts

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30

-

$3.285

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 46 parts In-Stock

1+ parts

$13.585

100+ parts

-

1k+ parts

-

10k+ parts

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46

$13.585

-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$14.364

100+ parts

-

1k+ parts

-

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500

$14.364

-

-

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Vyrian

USA . 8,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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8,871

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,058 parts In-Stock

1+ parts

$1.862

100+ parts

-

1k+ parts

-

10k+ parts

-

4,058

$1.862

-

-

-

Semicontronic

India . 286 parts In-Stock

1+ parts

$8.270

100+ parts

$8.063

1k+ parts

$8.022

10k+ parts

-

286

$8.270

$8.063

$8.022

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Ampacity Inc.

Singapore . 271 parts In-Stock

1+ parts

$8.270

100+ parts

-

1k+ parts

-

10k+ parts

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271

$8.270

-

-

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Corphita

USA . 18 parts In-Stock

1+ parts

$12.870

100+ parts

-

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-

10k+ parts

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18

$12.870

-

-

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Component Stockers USA

USA . 925 parts In-Stock

1+ parts

$13.260

100+ parts

$10.540

1k+ parts

$13.220

10k+ parts

-

925

$13.260

$10.540

$13.220

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Modulus Dynamics

Lithuania . 23,209 parts In-Stock

1+ parts

$13.447

100+ parts

$12.909

1k+ parts

$12.371

10k+ parts

-

23,209

$13.447

$12.909

$12.371

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Corohmni

South Africa . 713 parts In-Stock

1+ parts

$13.447

100+ parts

-

1k+ parts

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10k+ parts

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713

$13.447

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$14.364

100+ parts

$14.077

1k+ parts

-

10k+ parts

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2,000

$14.364

$14.077

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Continental Prestige Electronics

USA . 485 parts In-Stock

1+ parts

$15.820

100+ parts

$10.550

1k+ parts

-

10k+ parts

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485

$15.820

$10.550

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Microchip USA

USA . 7,804 parts In-Stock

1+ parts

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100+ parts

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7,804

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Argo Parts USA

USA . 3,288 parts In-Stock

1+ parts

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100+ parts

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3,288

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Robosynatics

Brazil . 2,625 parts In-Stock

1+ parts

-

100+ parts

$13.178

1k+ parts

$12.909

10k+ parts

$12.909

2,625

-

$13.178

$12.909

$12.909

Lucentia Tech

USA . 2,625 parts In-Stock

1+ parts

-

100+ parts

$13.178

1k+ parts

$12.909

10k+ parts

$12.909

2,625

-

$13.178

$12.909

$12.909

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,000

-

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Overview

Experience the power of innovation with the IKQ75N120CT2XKSA1 by Infineon Technologies. As a leader in the field of Insulated Gate Bipolar Transistors (IGBT), Infineon Technologies delivers top-quality products that are ideal for power control applications. With a maximum collector-emitter voltage of 1200V and a maximum power dissipation of 938W, this N-channel transistor offers unparalleled performance and reliability. Whether you're looking to enhance the efficiency of your power systems or optimize energy consumption, the IKQ75N120CT2XKSA1 provides the perfect solution. Trust Infineon Technologies to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and durability, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control and high performance in N-channel configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified design with built-in diode for reverse current protection, reducing the need for additional components.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable and efficient performance.

Maximum VCEsat: 2.15 V

Low VCEsat value indicates minimal power loss and high efficiency in power switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for compact installation and efficient use of space in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connection and easy soldering during assembly.

Nominal Turn Off Time (toff): 372 ns

Fast turn-off time enhances switching speed and overall performance of the transistor.

No. of Terminals: 3

Three terminals provide necessary connections for power control and efficient operation.

Maximum Power Dissipation (Abs): 938 W

High power dissipation capability ensures reliable operation under heavy loads and extreme conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy installation and secure mounting on electronic devices or heat sinks.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows for use in various environments and applications.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating ensures safe and reliable operation even under high voltage conditions.

Transistor Element Material: SILICON

Silicon material offers high efficiency and performance in power control applications.

Maximum Gate-Emitter Voltage: 20 V

Gate-emitter voltage rating ensures proper control and protection of the transistor during operation.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in extreme cold environments.

Maximum Collector Current (IC): 150 A

High collector current rating allows for power handling capabilities in various applications.

Maximum Gate-Emitter Threshold Voltage: 6.5 V

Gate-emitter threshold voltage ensures proper turn-on behavior and performance of the transistor.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and protection against corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection to external circuits for efficient operation.

Nominal Turn On Time (ton): 86 ns

Fast turn-on time improves switching speed and efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKQ75N120CT2XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

372 ns

Nominal Turn On Time (ton):

86 ns

Maximum VCEsat:

2.15 V

Trade Compliance

IKQ75N120CT2XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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